MMO62-16IO6

**MMO62-16io6** 

## **Thyristor** 

**VRRM** _**=**_ **1600 V** 

**I** 

**I TAV** _**=**_ **30 A VT** _**=**_ **1,28 V** 

## AC Controlling 1~ full-controlled 

## **Part number** 

## **MMO62-16io6** 

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## **Features / Advantages:** 

- Thyristor for line frequency 

- Planar passivated chip 

- Long-term stability 

## **Applications:** 

- Line rectifying 50/60 Hz 

- Softstart AC motor control 

- DC Motor control 

- Power converter 

- AC power control 

- Lighting and temperature control 

## **Package:** SOT-227B (minibloc) 

- Isolation Voltage:          V~3000 

- Industry standard outline 

- RoHS compliant 

- Epoxy meets UL 94V-0 

- Base plate: Copper internally DCB isolated 

- Advanced power cycling 

## **Terms  Conditions of usage:** 

The data contained in this product data sheet is exclusively intended for technically trained staff. The user will have to evaluate the suitability of the product for the intended application and the completeness of the product data with respect to his application. The specifications of our components may not be considered as an assurance of component characteristics. The information in the valid application- and assembly notes must be considered. Should you require product information in excess of the data given in this product data sheet or which concerns the specific application of your product, please contact the sales office, which is responsible for you. 

Due to technical requirements our product may contain dangerous substances. For information on the types in question please contact the sales office, which is responsible for you. Should you intend to use the product in aviation, in health or live endangering or life support applications, please notify. For any such application we urgently recommend 

- to perform joint risk and quality assessments; 

- the conclusion of quality agreements; 

- to establish joint measures of an ongoing product survey, and that we may make delivery dependent on the realization of any such measures. 

IXYS reserves the right to change limits, conditions and dimensions. 

Data according to IEC 60747and per semiconductor unless otherwise specified 

20150827b 

© 2015 IXYS all rights reserved 

**MMO62-16io6** 

|**Rectifier**|**Rectifier**|**Ratings**|**Ratings**|**Ratings**|**Ratings**|**Ratings**|
|---|---|---|---|---|---|---|
|**Symbol**<br>**Definition**<br>**Conditions**|||**min.**|**typ.**|**max.**|**Unit**|
|**V**<br>**RSM/DSM**<br>_max. non-repetitive reverse/forward blocking voltage_||T    =   25°C<br>VJ|||1700|V|
|**V**<br>**RRM/DRM**<br>_max. repetitive reverse/forward blocking voltage_||T    =   25°C<br>VJ|||1600|V|
|**I**<br>**R/D**<br>_reverse current, drain current_|V    =          V<br>V    =          V<br>1600<br>1600<br>R/D<br>R/D|T    =   25°C<br>VJ<br>T    =       °C<br>VJ<br>125|||100<br>4|mA<br>µA|
|**VT**<br>_forward voltage drop_|I   =         A<br>T<br>30<br>I   =         A<br>60<br>T|T    =   25°C<br>VJ|||1,29<br>1,60|V<br>V|
||I   =         A<br>T<br>30<br>I   =         A<br>60<br>T|T    =       °C<br>VJ<br>125|||1,28<br>1,68|V<br>V|
|**I**<br>**I**<br>_RMS forward current per phase_<br>**RMS**<br>**TAV**<br>_average forward current_|T  =       °C<br>C<br>95<br>180° sine|T    =       °C<br>VJ<br>150|||30<br>66|A<br>A|
|**VT0**<br>**rT**<br>_threshold voltage_<br>_slope resistance_<br>_for power loss calculation only_||T    =       °C<br>VJ<br>150|||0,87<br>13,6|V<br>mΩ|
|**R**<br>**thJC**<br>_thermal resistance junction to case_|||||0,9|K/W|
|**RthCH**<br>_thermal resistance case to heatsink_||||0,20||K/W|
|**Ptot**<br>_total power dissipation_||T    =   25°C<br>C|||140|W|
|**ITSM**<br>_max. forward surge current_|t =  10 ms; (50 Hz), sine<br>t = 8,3 ms; (60 Hz), sine|T    =   45°C<br>VJ<br>V    = 0 V<br>R|||400<br>430|A<br>A|
||t =  10 ms; (50 Hz), sine|T    =       °C<br>VJ<br>150|||340<br>365|A<br>A|
||<br>t = 8,3 ms; (60 Hz), sine|V    = 0 V<br>R|||||
|**I²t**<br>_value for fusing_|t =  10 ms; (50 Hz), sine<br>t = 8,3 ms; (60 Hz), sine|T    =   45°C<br>V    = 0 V<br>VJ<br>R|||800<br>770|A²s<br>A²s|
||t =  10 ms; (50 Hz), sine<br>t = 8,3 ms; (60 Hz), sine|T    =       °C<br>150<br>V    = 0 V<br>VJ<br>R|||580<br>555|A²s<br>A²s|
|**CJ**<br>_junction capacitance_|V  =         V<br>400<br>f = 1 MHz<br>R|T    =   25°C<br>VJ||22||pF|
|**PGM**<br>_max. gate power dissipation_<br>**PGAV**<br>_average gate power dissipation_|t  =   30 µs<br>P<br>t  =<br>P<br>300 µs|T    =       °C<br>C<br>150|||10<br>5<br>0,5|W<br>W<br>W|
|**(di/dt)cr**<br>_critical rate of rise of current_|repetitive,   I   =<br>TVJ = 150°C; f = 50 Hz<br>t  =        µs;<br>I<br>A; V  =⅔V<br>90 A<br>T<br>P<br>G =<br>0,3<br>di  /dt<br>A/µs;<br>G<br>= 0,3<br>DRM<br>non-repet., I   =<br>30 A<br>T<br>200|repetitive,   I   =<br>90 A<br>T|||100|A/µs|
||||||500|A/µs|
|**(dv/dt)**<br>_critical rate of rise of voltage_<br>**cr**|T<br>= 150°C<br>R     =∞; method 1 (linear voltage rise)<br>VJ<br>V  =⅔VDRM<br>GK||||1000|V/µs|
|**VGT**<br>_gate trigger voltage_<br>**IGT**<br>_gate trigger current_|V = 6 V<br>T<br>=<br>°C<br>25<br>D<br>VJ<br>T<br>=<br>°C<br>-40<br>VJ<br>V = 6 V<br>T<br>=<br>°C<br>25<br>D<br>VJ<br>T<br>=<br>°C<br>-40<br>VJ||||1,5<br>100<br>1,6<br>150|V<br>mA<br>V<br>mA|
|**VGD**<br>_gate non-trigger voltage_<br>**IGD**<br>_gate non-trigger current_|T<br>=<br>°C<br>VJ<br>V  =⅔V<br>D<br>DRM<br>150||||0,2<br>5|V<br>mA|
|_latching current_<br>**IL**|T<br>=<br>°C<br>VJ<br>25<br>t<br>µs<br>p =<br>10<br>I<br>A;<br>=<br>03<br>di  /dt<br>A/s<br><br>=<br>03||||150|mA|
||G <br>,<br> <br>µ<br>G<br><br>,||||||
|_holding current_<br>**IH**|T<br>=<br>°C<br>VJ<br>25<br>V = 6 V<br>D<br>R    =∞<br>GK||||100|mA|
|_gate controlled delay time_<br>**tgd**|T<br>=<br>°C<br>VJ<br>25<br>I<br>A;<br>G =<br>0,3<br>di  /dt<br>A/µs<br>G<br>=<br>0,3<br>V   = ½ V<br>D<br>DRM||||2|µs|
|_turn-off time_<br>**tq**|T<br>=<br>°C<br>VJ<br>di/dt =<br>A/µs<br>10<br>dv/dt =<br>V/µs<br>15<br>V   =<br>R<br>100 V; I<br>A;<br>T = 20<br>V  =⅔VDRM<br>t<br>µs<br>p = 200<br>125|||150||µs|
||||||||



IXYS reserves the right to change limits, conditions and dimensions. 

Data according to IEC 60747and per semiconductor unless otherwise specified 

20150827b 

© 2015 IXYS all rights reserved 

**MMO62-16io6** 

|**Ratings**<br>**Package**<br>**SOT-227B (minibloc)**|**Ratings**<br>**Package**<br>**SOT-227B (minibloc)**|**Ratings**<br>**Package**<br>**SOT-227B (minibloc)**|**Ratings**<br>**Package**<br>**SOT-227B (minibloc)**|**Ratings**<br>**Package**<br>**SOT-227B (minibloc)**|**Ratings**<br>**Package**<br>**SOT-227B (minibloc)**|
|---|---|---|---|---|---|
|**Symbol**<br>**Definition**<br>**Conditions**||**min.**|**typ.**|**max.**|**Unit**|
|**I RMS**<br>_RMS current_<br>per terminal||||150|A|
|**TVJ**<br>_virtual junction temperature_||-40||150|°C|
|**Top**<br>_operation temperature_||-40||125|°C|
|**Tstg**<br>_storage temperature_||-40||150|°C|
|**Weight**|||30||g|
|**M D**<br>_mounting torque_<br>**M T**<br>_terminal torque_||1,1||1,5|Nm<br>Nm|
|||1,1||1,5||
|**dSpp/App**<br>_creepage distance on surface | striking distance through air_<br>**dSpb/Apb**<br>_terminal to backside_<br>_terminal to terminal_|10,5<br>8,6|3,2<br>6,8|||mm<br>mm|
|**V**<br>t = 1 second<br>t = 1 minute<br>_isolation voltage_<br>50/60 Hz, RMS; I≤1 mA<br>ISOL<br>**ISOL**||3000||V<br>V||
|||2500||||



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|**Ordering**|**Ordering Number**<br>|**Marking on Product**|**Delivery Mode**|**Quantity**|**Code No.**|
|---|---|---|---|---|---|
|Standard|MMO62-16io6<br>|MMO62-16io6|Tube|10|459437|



|**Equivalent Circuits for Simulation**<br>T    =<br>VJ<br>150 °C<br>_* on die level_|**Equivalent Circuits for Simulation**<br>T    =<br>VJ<br>150 °C<br>_* on die level_|
|---|---|
|I|V0<br>~~R~~0|



IXYS reserves the right to change limits, conditions and dimensions. 

Data according to IEC 60747and per semiconductor unless otherwise specified 

20150827b 

© 2015 IXYS all rights reserved 

**MMO62-16io6** 

## **Outlines SOT-227B (minibloc)** 

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IXYS reserves the right to change limits, conditions and dimensions. 

Data according to IEC 60747and per semiconductor unless otherwise specified 

20150827b 

© 2015 IXYS all rights reserved 

**MMO62-16io6** 

## **Thyristor** 

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80 350 800<br>50 Hz, 80% VRRM VR = 0 V<br>300<br>60 600<br>TVJ = 45°C<br>IT I 250 I [2] t TVJ = 45°C<br>40 TSM 400<br>[A] 200 [A [2] s]<br>[A] TVJ = 125°C TVJ = 125°C<br>20 200<br>125°C 150<br>150°C<br>TVJ = 25°C<br>0 100 0<br>0,4 0,8 1,2 1,6 2,0 0,01 0,1 1 1 2 3 4 5 6 7 8 910<br>VT [V] t [s] t [ms]<br>Fig. 1  Forward characteristics Fig. 2 Surge overload current Fig. 3 I [2] t versus time (1-10 ms)<br>10 1000<br>1: I GT , T VJ = 125°C TVJ = 25°C dc =<br>2: IGT, TVJ = 25 ° C 1<br>3: I GT , T VJ = -40°C 60 0.5<br>0.4<br>0.33<br>100 typ. Limit IT(AV)M 0.17<br>VG 40 0.08<br>[V] 1 1 2 3 5 6 tgd [A]<br>4 [µs]<br>10<br>20<br>4: P GAV  = 0.5 W<br>5: PGM = 5 W<br>IGD, TVJ = 125°C 6: PGM = 10 W 0<br>0,1 1<br>0 25 50 75 100 125 150<br>1 10 100 1000 10000 10 100 1000<br>IG [mA] IG [mA] TC [°C]<br>Fig. 4 Gate trigger characteristics Fig. 5 Gate controlled delay time Fig. 6 Max. forward current<br>at case temperature<br>60 1,0<br>dc =<br>1 RthHA<br>50 0.5 0.4 0,8<br>0.4 0.6<br>0.33 0.8<br>40 0.17 1.0<br>P(AV) 0.08 2.0 0,6<br>4.0 Z<br>30 thJC<br>[W] 0,4<br>20 Rthi [K/W] ti [s]<br>[K/W]<br>0.076 0.0005<br>0,2 0.134 0.019<br>10<br>0.460 0.124<br>0.230 0.450<br>0 0,0<br>0 10 20 30 40 0 50 100 150 10 [0] 10 [1] 10 [2] 10 [3] 10 [4]<br>IT(AV) [A] Tamb [°C] t [ms]<br>Fig. 7a Power dissipation versus direct output current Fig. 8  Transient thermal impedance junction to case<br>Fig. 7b and ambient temperature<br>**----- End of picture text -----**<br>


IXYS reserves the right to change limits, conditions and dimensions. 

Data according to IEC 60747and per semiconductor unless otherwise specified 

20150827b 

© 2015 IXYS all rights reserved