MMJX1H40N150
Thyristor, 1.5 kV, SSMPD, 16 Pins
- Manufacturer: LITTELFUSE
- Product type: Thyristors - SCRs
- SVHC: To Be Advised
- No. of Pins: 16Pins
- Product Range: -
- Thyristor Mounting: Surface Mount
- Holding Current Max: 200A
- On State RMS Current: -
- Thyristor Case Style: SSMPD
- Average On State Current: -
- Gate Trigger Current Max: -
- Gate Trigger Voltage Max: -
- Operating Temperature Max: 150°C
- Peak Non Repetitive Surge Current: -
- Peak Repetitive Off State Voltage: 1.5kV
| Delivery and price | |
|---|---|
| Units per pack | 50 |
| Price | 26.65 € |
| Current stock | 200+ |
| Lead time | 30 days |
## **1500V MOS Gated Thyristor** ## **(Electrically Isolated Tab)** **==> picture [311 x 127] intentionally omitted <==** **----- Start of picture text -----**<br> MMJX1H40N150 VDM = 1500V<br>A<br>A<br>G<br>Ks<br>Ks<br>K<br>G . pp<br>K<br>**----- End of picture text -----**<br> **==> picture [51 x 7] intentionally omitted <==** **----- Start of picture text -----**<br> Isolated Tab<br>**----- End of picture text -----**<br> |**Symbol**<br>**VDM**|**Test Conditions**<br>TJ = 25°C to 150°C|**Maximum Ratings**<br>1500|V| |---|---|---|---| |**VGK**|Continuous<br>±30|±30|V| |**VGK**<br>**ITSM**|Transient<br>±40<br>TC = 25°C, 1μs<br>15.5<br>TC = 25°C, 10μs<br>6.4|±40<br>15.5<br>6.4<br>kA|V<br>kA<br>kA| |**PD**|TC = 25°C|320|W| |**TJ**||-55 ... +150|°C| |**TJM**||150|°C| |**Tstg**||-55 ... +150|°C| |**TL**|Maximum Lead Temperature for Soldering 300 °C||Maximum Lead Temperature for Soldering 300 °C| |**TSOLD**|1.6 mm (0.062 in.) from Case for 10s 260||°C| |**VISOL**|50/60Hz, 1 minute|2500|V~| |**FC**|Mounting Force<br>50..200/11..45|50..200/11..45|N/lb| |**Weight**|5 g|5 g|5 g| **==> picture [98 x 71] intentionally omitted <==** **----- Start of picture text -----**<br> A<br>K<br>Ks<br>G<br>**----- End of picture text -----**<br> G = Gate K = Cathode A = Anode Ks = Cathode Sense ## **Features** - Silicon Chip on Direct-Copper Bond (DCB) Substrate - Isolated Mounting Surface - 2500V~ Electrical Isolation - Very High Current Capability |**Symbol**<br>(T= 25C, Unless Otherwise Specified)**Min. Typ. Max.**|**Min. Typ. Max.**|**Min. Typ. Max.**| |---|---|---| |(TJ= 25C, Unless Otherwise Specified)**Min. Typ. Max.**|**Min. Typ. Max.**|**Min. Typ. Max.**| |**VBR**<br>IA= 250A, VGK= 0V<br>1500 V|1500 V|1500 V| |**VGK(th)**<br>IA<br>= 250μA, VAK= VGK<br>2.5 5.0|2.5 5.0|2.5 5.0<br>V| |**VT**<br>IT<br>= 1000A, VGK= 15V<br>4.75 6.0|4.75 6.0|4.75 6.0<br>V| |**rT**IT<br>> I**L**, VGK= 15V<br>1.20 m|1.20 m|1.20 m| |**VBO**<br>VGK= 15V<br>5.25|5.25|V| |**ID**<br>VAK = 1500V, VGK= 0V<br>TJ= 125C|15<br>1.5 mA|15<br>A<br>1.5 mA| |**IL**<br>250<br>**IH**<br>200|250<br>200|A<br>A| |**IGKS**<br>VAK = 0V, VGK=30V||200 nA| ## **Advantages** - High Power Density - Low Gate Drive Requirement ## **Applications** - Capacitive Discharge Circuits - Ignition Circuits - Solid State Surge Protection © 2017 IXYS CORPORATION, All Rights Reserved DS100594C(12/17) **MMJX1H40N150** GIXYS **Symbol Test Conditions Characteristic Values** (TJ = 25°C Unless Otherwise Specified)J = 25°C Unless Otherwise Specified) = 25°C Unless Otherwise Specified) **Min. Typ. Max. Ciksikss** 2825 pF **Coksoks** VAK = 25V, VGK = 0V, f = 1MHzAK = 25V, VGK = 0V, f = 1MHz = 25V, VGK = 0V, f = 1MHzGK = 0V, f = 1MHz = 0V, f = 1MHz 164 pF **Crksrks** ~~|~~ 50 ~~_~~ pF **MMJX1H40N150** **Symbol Test Conditions Characteristic Values** (TJ = 25°C Unless Otherwise Specified)J = 25°C Unless Otherwise Specified) = 25°C Unless Otherwise Specified) **Min. Typ. Max. Ciksikss** 2825 pF **Coksoks** VAK = 25V, VGK = 0V, f = 1MHzAK = 25V, VGK = 0V, f = 1MHz = 25V, VGK = 0V, f = 1MHzGK = 0V, f = 1MHz = 0V, f = 1MHz 164 pF **Crksrks** ~~|~~ 50 ~~_~~ pF **Q** 99 nC **g(on) Qgk** IC = 40A, VGK = 15V, VAK = 600V 22 nC **Qga** 36 nC **tri Capacitive Discharge, TJ = 25°C** 100 ns **t** IA = 2000A, VGK = 15V, RG = 1 50 ns **d** ~~—~~ VAK = 1000V, L < 20nH, Notes 2 & 3 **tri Capacitive Discharge, TJ = 125°C** 100 ns IA = 2000A, VGK = 15V, RG = 1 **td** VAK = 1000V, L < 20nH, Notes 2 & 3 50 ~~=~~ ns **R** 0.39 °C/W **thJC R** 0.12 °C/W **thCS R** 30 °C/W **thJA** ~~=~~ Notes: 1. Pulse test, t 300μs, duty cycle, d 2%. 2. It is recommended to use a gate driver capable of supplying more than 4Amps and >15V gate voltage. 3. Refer to fig. 8 & 9. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537 ## **MMJX1H40N150** **Fig. 1. Extended Output Characteristics @ TJ = 25J = 25 = 25[o] C** **==> picture [527 x 412] intentionally omitted <==** **----- Start of picture text -----**<br> Fig. 1. Extended Output Characteristics @ TJ = 25J = 25 = 25 C Fig. 2. Extended Output Characteristics @ TJ = 125 [o] C<br>1200 1200<br>1000 VGK = 20V 1000 VGK = 20V<br> 17V 17V<br> 15V 15V<br> 13V 13V<br>800 12V 800 11V<br> 11V 10V<br> 9V<br>600 WT 600 |<br>400 eee |p 400 ee)<br>200 200 | Pee<br>10V<br>9V<br>8V<br>8V<br>0 aee 0 aa|| ee 6V<br>0 1 2 3 4 5 6 7 8 9 0 1 2 3 4 5 6 7 8 9<br>VAK - Volts VAK - Volts<br>Fig. 3. Extended Output Characteristics @ TJ = - 40 [o] C Fig. 4. Gate Charge<br>1200 16<br>14 VAK = 600V<br>1000 - VGK = 20V ML) I A See = 40A<br> 18V<br> 16V 12 I G = 10mA<br> 15V<br>800 14V<br>10<br>ce 13V gece RE<br> 12V<br>600 8<br>6 |<br>400 SCPC» GERBER<br>| 4 TOEx EEEEE<br>200 11V<br>2<br>9V<br>7V<br>0 0<br>0 1 2 3 4 5 6 7 8 9 0 10 20 30 40 50 60 70 80 90 100<br>VAK - Volts QG - NanoCoulombs<br>Amperes<br>IA - - AmperesIA<br> - Volts<br> - AmperesIA VGK<br>**----- End of picture text -----**<br> **==> picture [255 x 194] intentionally omitted <==** **----- Start of picture text -----**<br> Fig. 5. Capacitance<br>10,000<br>f = 1 MHz<br>C iks<br>1,000<br>Coks<br>100<br>C rks<br>10<br>0 5 10 15 20 25 30 35 40<br>VAK - Volts<br>Capacitance - PicoFarads<br>**----- End of picture text -----**<br> **==> picture [252 x 192] intentionally omitted <==** **----- Start of picture text -----**<br> Fig. 6. Maximum Transient Thermal Impedance<br>1<br>0.1<br>0.01<br>0.001<br>0.00001 0.0001 0.001 0.01 0.1 1 10<br>Pulse Width - Seconds<br> - K / W<br>(th)JC<br>Z<br>**----- End of picture text -----**<br> © 2017 IXYS CORPORATION, All Rights Reserved **MMJX1H40N150** **Fig. 7. Cauer Thermal Network** |i Ri (<br>1<br>2<br> 3 <br>4 0.121939 2.5000000|i Ri () Ci (F)<br>10.014083 0.0078555<br>20.068078 0.0196550<br> 0.133430 0.1199600<br>4 0.121939 2.5000000| |---|---| ||10.014083| ||20.068078| ||0.133430| ||4 0.121939 2.5000000| ||| **Fig. 8. Capacitive Discharge** **Fig. 9. Capacitive Discharge Waveform** IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS REF: MMJX1_40N150(7A) 02-19-14 **MMJX1H40N150** PINS: - 1 - GATE K = Cathode - 3 - Ks = Cathode Sense A = Anode - 4 - 8 - K = Cathode - 9 - 16 - A = Anode © 2017 IXYS CORPORATION, All Rights Reserved
Updated at June 10, 2026
Founded in 1927 and headquartered in Chicago, Illinois, Littelfuse is a premier global manufacturer of circuit protection, power control, and sensing technologies. Widely recognized for pioneering the first small, fast-acting protective fuse, the company has grown into an industry leader whose highly reliable components are essential to modern industrial, transportation, and consumer electronics applications worldwide. At the core of the Littelfuse portfolio is an expansive and industry-leading range of circuit protection solutions. This encompasses a massive selection of traditional fuses, fuse holders, and resettable PTC thermistor fuses designed to safely interrupt overcurrent conditions. To defend against electrical overstress, Littelfuse also provides advanced transient voltage suppression (TVS) technologies, including thousands of specialized TVS diodes, TVS varistors, and gas discharge tubes (GDTs) that ensure robust defense against voltage spikes and environmental hazards. Beyond its foundational protection components, Littelfuse manufactures a diverse array of discrete semiconductors, sensors, and switching devices. Engineers rely on their high-performance thyristors, including TRIACs and SCRs, alongside power-efficient Schottky diodes and MOSFETs for demanding power control applications. Complemented by precision proximity sensors and highly reliable reed and solid-state relays, Littelfuse delivers the critical building blocks required for secure, efficient, and complete system design.
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