Illustrative purposes only
MMDT5451-7-F
Bipolar Transistor Array, Dual, Complementary NPN and PNP, 160 V, 200 mA, 200 mW, 80 hFE, SOT-363
⚠️ Given the current worldwide supply chain situation, we kindly ask you to take the information shown as a guideline.
- Manufacturer: DIODES INC.
- Product type: Bipolar Junction Transistor Arrays - BJT
- Product variants: No other variants available. No other names.
- Transistor Polarity: Complementary NPN and PNP
- Power Dissipation NPN: 200mW
- Power Dissipation PNP: 200mW
- Transition Frequency NPN: 300MHz
- Transition Frequency PNP: 300MHz
- DC Current Gain hFE Min NPN: 80hFE
- DC Current Gain hFE Min PNP: 80hFE
- Continuous Collector Current NPN: 200mA
- Continuous Collector Current PNP: 200mA
- Collector Emitter Voltage Max NPN: 160V
- Collector Emitter Voltage Max PNP: 160V
| Delivery and price | |
|---|---|
| Units per pack | 5000 |
| Price | 0.052 € |
| Current stock | 4785 |
| Lead time | 7 days |