MMDT3946-7-F

Bipolar Transistor Array, Dual, Complementary NPN and PNP, 40 V, 40 V, 200 mA, 200 mA, 200 mW

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Manufacturer: DIODES INC.
Product type: Bipolar Junction Transistor Arrays - BJT
Transistor Polarity:NPN, PNP; Collector Emitter Voltage V(br)ceo:40V; Power Dissipation Pd:200mW; DC Collector Current:-200mA; DC Current Gain hFE:100hFE; Transistor Case Style:SOT-363; No. o
No. of Pins: 6Pins
Product Range: -
Qualification: -
Transistor Mounting: Surface Mount
Transistor Polarity: Complementary NPN and PNP
Power Dissipation NPN: 200mW
Power Dissipation PNP: 200mW
Transistor Case Style: SOT-363
Transition Frequency NPN: 300MHz
Transition Frequency PNP: 250MHz
Operating Temperature Max: 150°C
DC Current Gain hFE Min NPN: 100hFE
DC Current Gain hFE Min PNP: 100hFE
Continuous Collector Current NPN: 200mA
Continuous Collector Current PNP: 200mA
Collector Emitter Voltage Max NPN: 40V
Collector Emitter Voltage Max PNP: 40V

Delivery and price
Units per pack	25000
Price	0.048 €
Current stock	10+
Lead time	30 days

Datasheet

Updated at March 15, 2026