Illustrative purposes only
MMDT3946-7-F
Bipolar Transistor Array, Dual, Complementary NPN and PNP, 40 V, -200 mA, 200 mW, 100 hFE, SOT-363
⚠️ Given the current worldwide supply chain situation, we kindly ask you to take the information shown as a guideline.
- Manufacturer: DIODES INC.
- Product type: Bipolar Junction Transistor Arrays - BJT
- Product variants: No other variants available. No other names.
- Transistor Polarity: Complementary NPN and PNP
- Power Dissipation NPN: 200mW
- Power Dissipation PNP: 200mW
- Transition Frequency NPN: 300MHz
- Transition Frequency PNP: 250MHz
- DC Current Gain hFE Min NPN: 100hFE
- DC Current Gain hFE Min PNP: 100hFE
- Continuous Collector Current NPN: 200mA
- Continuous Collector Current PNP: 200mA
- Collector Emitter Voltage Max NPN: 40V
- Collector Emitter Voltage Max PNP: 40V
| Delivery and price | |
|---|---|
| Units per pack | 25000 |
| Price | 0.053 € |
| Current stock | N/A |
| Lead time | 30 days |
Datasheet
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