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MMDT2222V-7

Bipolar Transistor Array, Dual NPN, 40 V, 600 mA, 150 mW, 100 hFE, SOT-563

  • Manufacturer: DIODES INC.
  • Product type: Bipolar Junction Transistor Arrays - BJT
  • Product variants: No other variants available. No other names.
  • Power Dissipation NPN: 150mW
  • Transition Frequency NPN: 300MHz
  • DC Current Gain hFE Min NPN: 100hFE
  • Continuous Collector Current NPN: 600mA
  • Collector Emitter Voltage Max NPN: 40V
Delivery and price
Units per pack 500
Price 0.146 €
Current stock N/A
Lead time 30 days