MMDL914T1G

## MMDL914T1G, SMMDL914T1G, MMDL914T3G 

## High-Speed Switching Diode 

## **http://onsemi.com** 

## **Features** 

- S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable 

- These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant 

**SOD−323 CASE 477 STYLE 1** 

## **MAXIMUM RATINGS** 

~~es~~ **Rating Symbol** ~~ee Ge~~ **Value Unit** ~~ee~~ Reverse Voltage V ~~es~~ R ~~Gs~~ 100 V Forward Current IF 200 mA ~~esee Ge~~ Non−Repetitive Peak Forward Surge IFSM(surge) 500 mA Current 60 Hz ~~ee~~ Repetitive Peak Forward Current IFRM 1.0 A (Note 2) ~~OTs~~ Non−Repetitive Peak Forward Current IFSM A (Square Wave, TJ = 25 ° C prior to surge) t = 1 s uu 36.0 t = 10 s 18.0 t = 100 s 6.0 t = 1 ms 3.0 t = 1 s 0.7 

**THERMAL CHARACTERISTICS** 

|**Characteristic**<br>~~es~~|**Symbol**<br>~~es~~<br>~~ae~~|**Max**<br>~~es~~<br>~~ee~~|**Unit**<br>~~es~~<br>~~ee~~|
|---|---|---|---|
|Total Device Dissipation FR-5 Board<br>TA= 25°C (Note 1)<br>Derate above 25°C<br>~~es~~|PD<br>~~es~~<br>~~ae~~|200<br>1.57<br>~~es~~<br>~~ee~~|mW<br>mW/°C<br>~~es~~<br>~~ee~~|
|Thermal Resistance,<br>Junction−to−Ambient<br>~~ce~~|R JA<br>~~ae ~~<br>~~ce~~<br>~~Gs~~|635<br> ~~ee~~<br>~~ce~~|°C/W<br>~~ee~~<br>~~ce~~|
|Junction and Storage Temperature<br>~~ee~~|TJ, Tstg<br>~~ee~~<br>~~Gs~~|−55 to 150<br>~~ee~~|°C<br>~~ee~~|



Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 

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1 2<br>CATHODE ANODE<br>**----- End of picture text -----**<br>


## **MARKING DIAGRAM** 

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5D M<br>5D = Specific Device Code<br>M = Date Code<br>= Pb−Free Package<br>(Note: Microdot may be in either location)<br>**----- End of picture text -----**<br>


## **ORDERING INFORMATION** 

|**Device**|**Package**|**Shipping**†|
|---|---|---|
|MMDL914T1G|SOD−323<br>(Pb−Free)|3,000 /<br>Tape & Reel|
|SMMDL914T1G|SOD−323<br>(Pb−Free)|3,000 /<br>Tape & Reel|
|MMDL914T3G|SOD−323<br>(Pb−Free)|10,000 /<br>Tape & Reel|



   - †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. 

1. FR-4 Minimum Pad. 

2. Square Wave, f = 40 kHz, PW = 200 ns Test Duration = 60 s, TJ = 25 ° C prior to surge. 

Publication Order Number: 

**1** 

© Semiconductor Components Industries, LLC, 2013 **July, 2013 − Rev. 9** 

**MMDL914T1/D** 

**MMDL914T1G, SMMDL914T1G, MMDL914T3G** 

## **ELECTRICAL CHARACTERISTICS** (TA = 25 ° C unless otherwise noted) 

|**ELECTRICAL CHARACTERISTICS**(TA= 25°C unless otherwise noted)|||||
|---|---|---|---|---|
|**Characteristic**|**Symbol**|**Min**|**Max**|**Unit**|
|**OFF CHARACTERISTICS**|||||
|Reverse Breakdown Voltage<br>(IR= 100�Adc)|V(BR)|100|−|Vdc|
|Reverse Voltage Leakage Current<br>(VR= 20 Vdc)<br>(VR= 75 Vdc)|IR|−<br>−|25<br>5.0|nAdc<br>�Adc|
|Diode Capacitance<br>(VR= 0 V, f = 1.0 MHz)|CT|−|4.0|pF|
|Forward Voltage<br>(IF= 10 mAdc)|VF|−|1.0|Vdc|
|Reverse Recovery Time<br>(IF= IR= 10 mAdc) (Figure 1)|trr|−|4.0|ns|



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820 �<br>IF<br>+10 V 2.0 k 0.1 �F tr t p t<br>100 �H IF 10% t rr t<br>0.1 �F<br>D.U.T. 90%<br>50 � OUTPUT 50 � INPUT iR(REC) = 1.0 mA<br>IR<br>PULSE SAMPLING VR OUTPUT PULSE<br>GENERATOR OSCILLOSCOPE INPUT SIGNAL<br>(IF = IR = 10 mA; MEASURED<br>at iR(REC) = 1.0 mA)<br>**----- End of picture text -----**<br>


Notes: 1. A 2.0 k � variable resistor adjusted for a Forward Current (IF) of 10 mA. Notes: 2. Input pulse is adjusted so IR(peak) is equal to 10 mA. Notes: 3. tp » trr 

**Figure 1. Recovery Time Equivalent Test Circuit** 

**http://onsemi.com** 

**2** 

**MMDL914T1G, SMMDL914T1G, MMDL914T3G** 

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100 10<br>TA = 150°C<br>TA = 85°C TA = 125°C<br>1.0<br>10<br>TA = -�40°C TA = 85°C<br>0.1<br>1.0 TA = 25°C TA = 55°C<br>0.01<br>TA = 25°C<br>0.1 0.001<br>0.2 0.4 0.6 0.8 1.0 1.2 0 10 20 30 40 50<br>VF, FORWARD VOLTAGE (V) VR, REVERSE VOLTAGE (V)<br>Figure 2. Forward Voltage Figure 3. Leakage Current<br>0.68 40<br>Based on square wave currents<br>35 TJ = 25 ° C prior to surge<br>0.64 30<br>25<br>0.60 20<br>15<br>0.56 10<br>5<br>0.52 0<br>0 2 4 6 8 0.0001 0.001 0.01 0.1 1 10<br>VR, REVERSE VOLTAGE (V) Tp (mSec)<br>A)<br>μ<br>IR, REVERSE CURRENT (<br>IF, FORWARD CURRENT (mA)<br> (A)<br>IFSM<br>CD, DIODE CAPACITANCE (pF)<br>**----- End of picture text -----**<br>


**Figure 4. Capacitance** 

**Figure 5. Maximum Non−repetitive Peak Forward Current as a Function of Pulse Duration, Typical Values** 

**http://onsemi.com** 

**3** 

**MMDL914T1G, SMMDL914T1G, MMDL914T3G** 

## **PACKAGE DIMENSIONS** 

**SOD−323** CASE 477−02 ISSUE H 

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NOTES:<br>1. DIMENSIONING AND TOLERANCING PER ANSI<br>Y14.5M, 1982.<br>HE 2. CONTROLLING DIMENSION: MILLIMETERS.<br>D 3. LEAD THICKNESS SPECIFIED PER L/F DRAWING<br>WITH SOLDER PLATING.<br>4. DIMENSIONS A AND B DO NOT INCLUDE MOLD<br>FLASH, PROTRUSIONS OR GATE BURRS.<br>= 5. DIMENSION L IS MEASURED FROM END OF RADIUS.<br>b 1 2 E<br>MILLIMETERS INCHES<br>= DIM MIN NOM MAX MIN NOM MAX<br>A 0.80 0.90 1.00 0.031 0.035 0.040<br>A1 0.00 0.05 0.10 0.000 0.002 0.004<br>A3 0.15 REF 0.006 REF<br>A3 b 0.25 0.32 0.4 0.010 0.012 0.016<br>C 0.089 0.12 0.177 0.003 0.005 0.007<br>D 1.60 1.70 1.80 0.062 0.066 0.070<br>A E 1.15 1.25 1.35 0.045 0.049 0.053<br>L 0.08 0.003<br>HE 2.30 2.50 2.70 0.090 0.098 0.105<br>C fu NOTE 5L A1 C O, STYLE 1: 4 PIN 1. CATHODE (POLARITY BAND)<br>NOTE 3 2. ANODE<br>**----- End of picture text -----**<br>


## **SOLDERING FOOTPRINT*** 

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0.63<br>0.025 ><br>0.83<br>0.033<br>1.60<br>HU<br>0.063<br>2.85<br>0.112<br>**----- End of picture text -----**<br>


*For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. 

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## **PUBLICATION ORDERING INFORMATION** 

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**MMDL914T1/D** 

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