MMDL301T1G

## MMDL301T1G 

## Silicon Hot-Carrier Diodes 

## **Schottky Barrier Diode** 

These devices are designed primarily for high−efficiency UHF and VHF detector applications. They are readily adaptable to many other fast switching RF and digital applications. They are supplied in an inexpensive plastic package for low−cost, high−volume consumer and industrial/commercial requirements. They are available in a Surface Mount package. 

## **Features** 

## **http://onsemi.com** 

## **30 VOLTS SILICON HOT−CARRIER DETECTOR AND SWITCHING DIODES** 

- Extremely Low Minority Carrier Lifetime − 15 ps (Typ) 

- Very Low Capacitance − 1.5 pF (Max) @ VR = 15 V 

- Low Reverse Leakage − IR = 13 nAdc (Typ) 

1 2 CATHODE ANODE 

- These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant 

**MAXIMUM RATINGS** (TJ = 125 ° C unless otherwise noted) **Rating Symbol Value Unit** Reverse Voltage VR 30 V ~~ee~~ **THERMAL CHARACTERISTICS Characteristic Symbol Max Unit** ~~eses ee~~ Total Device Dissipation FR−5 Board, PD (Note 1) @TA = 25 ° C 200 mW Derate above 25 ° C 1.57 mW/ ° C ~~ee~~ Thermal Resistance, Junction−to−Ambient R JA ~~ee~~ 635 ° C/W ~~oe~~ Junction and Storage Temperature Range TJ, Tstg −55 to +150 ° C 

Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. FR−5 Minimum Pad 

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2 PLASTIC<br>SOD−323<br>CASE 477<br>1 STYLE 1<br>oc<br>**----- End of picture text -----**<br>


## **MARKING DIAGRAM** 

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4T M<br>4T = Device Code<br>M = Date Code*<br>= Pb−Free Package<br>**----- End of picture text -----**<br>


(Note: Microdot may be in either location) *Date Code orientation may vary depending upon manufacturing location. 

**ELECTRICAL CHARACTERISTICS** (TA = 25 ° C unless otherwise noted) 

**Characteristic Symbol Min Typ Max Unit** Reverse Breakdown Voltage V(BR)R 30 − − V (IR = 10 A) ~~ee~~ Total Capacitance CT − 0.9 1.5 pF (VR = 15 V, f = 1.0 MHz) Figure 1 ~~ee~~ Reverse Leakage IR − 13 200 nAdc (VR = 25 V) Figure 3 ~~es~~ Forward Voltage VF − 0.38 0.45 Vdc (IF = 1.0 mAdc) Figure 4 ~~es~~ Forward Voltage VF − 0.52 0.6 Vdc (IF = 10 mAdc) Figure 4 ~~ee~~ 

**ORDERING INFORMATION** 

|**Device**<br>**Package**<br>**Shipping**†<br>MMDL301T1G<br>SOD−323<br>(Pb−Free)<br>3000 / Tape & Reel<br>†For information on tape and reel specifications,<br>including part orientation and tape sizes, please<br>refer to our Tape and Reel Packaging Specifications<br>Brochure, BRD8011/D.<br>~~I~~|
|---|



Publication Order Number: **MMDL301T1/D** 

**1** 

© Semiconductor Components Industries, LLC, 2010 **September, 2010− Rev. 2** 

**MMDL301T1G** 

## **TYPICAL ELECTRICAL CHARACTERISTICS** 

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2.8 500<br>f = 1.0 MHz<br>2.4<br>400<br>2.0 KRAKAUER METHOD<br>300<br>1.6<br>1.2<br>200<br>0.8<br>100<br>0.4<br>0 0<br>0 3.0 6.0 9.0 12 15 18 21 24 27 30 0 10 20 30 40 50 60 70 80 90 100<br>VR, REVERSE VOLTAGE (VOLTS) IF, FORWARD CURRENT (mA)<br>, TOTAL CAPACITANCE (pF)<br>CT<br>, MINORITY CARRIER LIFETIME (ps)<br>�<br>**----- End of picture text -----**<br>


**Figure 1. Total Capacitance** 

**Figure 2. Minority Carrier Lifetime** 

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10 100<br>TA = 100°C<br>1.0<br>10<br>75°C TA = 85°C TA = -�40°C<br>0.1<br>1.0<br>0.01 25°C TA = 25°C<br>0.001 0.1<br>0 6.0 12 18 24 30 0.2 0.4 0.6 0.8 1.0 1.2<br>VR, REVERSE VOLTAGE (VOLTS) VF, FORWARD VOLTAGE (VOLTS)<br>�<br>, REVERSE LEAKAGE (   A) , FORWARD CURRENT (mA)<br>IR IF<br>**----- End of picture text -----**<br>


**Figure 3. Reverse Leakage** 

**Figure 4. Forward Voltage** 

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IF(PEAK) CAPACITIVE<br>CONDUCTION<br>IR(PEAK)<br>FORWARD STORAGE<br>CONDUCTION CONDUCTION<br>BALLAST SAMPLING<br>SINUSOIDAL<br>NETWORK PADS OSCILLOSCOPE<br>GENERATOR<br>(PADS) (50 � INPUT)<br>DUT<br>**----- End of picture text -----**<br>


**Figure 5. Krakauer Method of Measuring Lifetime** 

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**2** 

MECHANICAL CASE OUTLINE **PACKAGE DIMENSIONS** 

DATE 13 MAR 2007 

**SOD−323** CASE 477−02 ISSUE H 

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a 2 2<br>1 1<br>STYLE 1 STYLE 2<br>SCALE 4:1<br>HE<br>D<br>=<br>b 1 2 E<br>=<br>A3<br>A<br>C if NOTE 5L A1 C o,<br>NOTE 3<br>**----- End of picture text -----**<br>


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SOLDERING FOOTPRINT*<br>0.63<br>0.025<br>se<br>0.83<br>0.033<br>1.60<br>Ua<br>0.063<br>2.85<br>0.112<br>**----- End of picture text -----**<br>


- *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. 

NOTES: 

1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 

2. CONTROLLING DIMENSION: MILLIMETERS. 

3. LEAD THICKNESS SPECIFIED PER L/F DRAWING WITH SOLDER PLATING. 

4. DIMENSIONS A AND B DO NOT INCLUDE MOLD FLASH, PROTRUSIONS OR GATE BURRS. 

5. DIMENSION L IS MEASURED FROM END OF RADIUS. 

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MILLIMETERS INCHES<br>DIM MIN NOM MAX MIN NOM MAX<br>A 0.80 0.90 1.00 0.031 0.035 0.040<br>A1 0.00 0.05 0.10 0.000 0.002 0.004<br>A3 0.15 REF 0.006 REF<br>b 0.25 0.32 0.4 0.010 0.012 0.016<br>C 0.089 0.12 0.177 0.003 0.005 0.007<br>D 1.60 1.70 1.80 0.062 0.066 0.070<br>E 1.15 1.25 1.35 0.045 0.049 0.053<br>L 0.08 0.003<br>HE 2.30 2.50 2.70 0.090 0.098 0.105<br>Pt —— —*| 4 ]<br>**----- End of picture text -----**<br>


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GENERIC<br>MARKING DIAGRAM*<br>**----- End of picture text -----**<br>


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XX M XX M<br>qf p 2:<br>STYLE 1 STYLE 2<br>XX = Specific Device Code<br>M = Date Code<br>**----- End of picture text -----**<br>


- *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “ ”, may or may not be present. 

STYLE 1: STYLE 2: PIN 1. CATHODE (POLARITY BAND) NO POLARITY 2. ANODE 

Electronic versions are uncontrolled except when accessed directly from the Document Repository. **DOCUMENT NUMBER: 98ASB17533C** Printed  versions are uncontrolled  except when stamped  “CONTROLLED COPY” in red. **DESCRIPTION: SOD−323 PAGE 1 OF 1** ~~ee~~ ON Semiconductor and          are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the rights of others. 

www.onsemi.com 

© Semiconductor Components Industries, LLC, 2019 

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