MMBZ15VDLT1G

## MMBZxxVxL, SZMMBZxxVxL Series 

## 40 Watt Peak Power Zener Transient Voltage Suppressors 

## **SOT−23 Dual Common Cathode Zeners for ESD Protection** 

These dual monolithic silicon zener diodes are designed for applications requiring transient overvoltage protection capability. They are intended for use in voltage and ESD sensitive equipment such as computers, printers, business machines, communication systems, medical equipment and other applications. Their dual junction common cathode design protects two separate lines using only one package. These devices are ideal for situations where board space is at a premium. 

The SZ/MMBZ27VCL can be used to protect a single wire communication network form EMI and ESD transient surge voltages. 

The SZ/MMBZ27VCL is recommended by the Society of Automotive Engineers (SAE), February 2000, J2411 “Single Wire Can Network for Vehicle Applications” specification as a solution for transient voltage problems. 

## **Specification Features:** 

- SOT−23 Package Allows Either Two Separate Unidirectional Configurations or a Single Bidirectional Configuration 

- Working Peak Reverse Voltage Range − 12.8 V, 22 V, 31.2 V 

- Standard Zener Breakdown Voltage Range − 15 V, 27 V, 39 V 

- Peak Power − 40 W @ 1.0 ms (Bidirectional), per Figure 5 Waveform 

- ESD Rating of Class 3B (exceeding 16 kV) per the Human Body Model 

- ESD Rating of IEC61000−4−2 Level 4, ±30 kV Contact Discharge 

- Low Leakage < 100 nA 

- Flammability Rating: UL 94 V−O 

- SZ Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable 

- These are Pb−Free Devices 

## **Mechanical Characteristics:** 

> **CASE:** Void-free, transfer-molded, thermosetting plastic case **FINISH:** Corrosion resistant finish, easily solderable 

## **MAXIMUM CASE TEMPERATURE FOR SOLDERING PURPOSES:** 

260°C for 10 Seconds 

## @ **www.onsemi.com** 

**SOT−23 CASE 318 STYLE 9** 

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ANODE  1<br>ANODE  2<br>**----- End of picture text -----**<br>


3  CATHODE 

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MARKING DIAGRAM<br>**----- End of picture text -----**<br>


XXX M 1 =o XXX = 15D, 27C or 39C M = Date Code = Pb−Free Package (Note: Microdot may be in either location) 

## **ORDERING INFORMATION** 

|**Device**|**Package**|**Shipping**†|
|---|---|---|
|MMBZ15VDLT1G,<br>SZMMBZ15VDLT1G|SOT−23<br>(Pb−Free)|3,000 /<br>Tape & Reel|
|MMBZ15VDLT3G,<br>SZMMBZ15VDLT3G|SOT−23<br>(Pb−Free)|10,000 /<br>Tape & Reel|
|MMBZxxVCLT1G,<br>SZMMBZxxVCLT1G|SOT−23<br>(Pb−Free)|3,000 /<br>Tape & Reel|
|MMBZxxVCLT3G,<br>SZMMBZxxVCLT3G|SOT−23<br>(Pb−Free)|10,000 /<br>Tape & Reel|



- †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. 

Publication Order Number: **MMBZ15VDLT1/D** 

**1** 

© Semiconductor Components Industries, LLC, 1994 **October, 2016 − Rev. 16** 

**MMBZxxVxL, SZMMBZxxVxL Series** 

## **MAXIMUM RATINGS** 

|**MAXIMUM RATINGS**||||
|---|---|---|---|
|**Rating**|**Symbol**|**Value**|**Unit**|
|Peak Power Dissipation @ 1.0 ms (Note 1) @ TL ≤25°C|Ppk|40|Watts|
|Total Power Dissipation on FR−5 Board (Note 2)<br>@ TA= 25°C<br>Derate above 25°C|°PD°|225<br>1.8|mW<br>mW/°C|
|Thermal Resistance Junction−to−Ambient|R�JA|556|°C/W|
|Total Power Dissipation on Alumina Substrate (Note 3)<br>@ TA= 25°C<br>Derate above 25°C|°PD°|300<br>2.4|°<br>mW<br>mW/°C|
|Thermal Resistance Junction−to−Ambient|R�JA|417|°C/W|
|Junction and Storage Temperature Range|TJ, Tstg|−55 to +150|°C|
|Lead Solder Temperature − Maximum (10 Second Duration)|TL|260|°C|



Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 

1. Nonrepetitive current pulse per Figure 5 and derate above TA = 25 ° C per Figure 6. 

2. FR−5 = 1.0 x 0.75 x 0.62 in. 

3. Alumina = 0.4 x 0.3 x 0.024 in., 99.5% alumina 

## **ELECTRICAL CHARACTERISTICS** 

## (TA = 25 ° C unless otherwise noted) 

**UNIDIRECTIONAL** (Circuit tied to Pins 1 and 3 or 2 and 3) 

|**Symbol**|**Parameter**|
|---|---|
|IPP|Maximum Reverse Peak Pulse Current|
|VC|Clamping Voltage @ IPP|
|VRWM|Working Peak Reverse Voltage|
|IR|Maximum Reverse Leakage Current @ VRWM|
|VBR|Breakdown Voltage @ IT|
|IT|Test Current|
|VBR|Maximum Temperature Coefficient of VBR|
|IF|Forward Current|
|VF|Forward Voltage @ IF|



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I<br>IF<br>VC VBR VRWM<br>V<br>IR VF<br>IT<br>IPP<br>Uni−Directional TVS<br>**----- End of picture text -----**<br>


**ELECTRICAL CHARACTERISTICS** (TA = 25 ° C unless otherwise noted) **UNIDIRECTIONAL** (Circuit tied to Pins 1 and 3 or Pins 2 and 3) 

**(VF = 0.9 V Max @ IF = 10 mA)** 

|**(VF = 0.9 V Max @ IF = 10**|**mA)**||||||||||
|---|---|---|---|---|---|---|---|---|---|---|
|**Device***|**Device**<br>**Marking**|**VRWM**|**IR @ VRWM**|**Breakdown Voltage**||||**VC @ IPP**(Note 5)||**VBR**|
|||||**VBR**(Note 4)**(V)**|||**@ IT**|**VC**|**IPP**||
|||**Volts**|**nA**|**Min**|**Nom**|**Max**|**mA**|**V**|**A**|**mV/**�**C**|
|MMBZ15VDLT1G/T3G|15D|12.8|100|14.3|15|15.8|1.0|21.2|1.9|12|
|**(VF = 1.1 V Max @ IF = 200 mA)**|||||||||||
|**Device***|**Device**<br>**Marking**|**VRWM**|**IR @ VRWM**||**Breakdown Voltage**|||**VC @ IPP**(Note 5)||**VBR**|
|||||**VBR**(Note 4)**(V)**|||**@ IT**|**VC**|**IPP**||
|||**Volts**|**nA**|**Min**|**Nom**|**Max**|**mA**|**V**|**A**|**mV/**�**C**|
|MMBZ27VCLT1G/T3G|27C|22|50|25.65|27|28.35|1.0|38|1.0|26|
|MMBZ39VCLT1G/T3G|39C|31.2|50|37.05|39|40.95|1.0|55|0.76|35.3|



Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 

4. VBR measured at pulse test current IT at an ambient temperature of 25 ° C. 

5. Surge current waveform per Figure 5 and derate per Figure 6 

*Include SZ-prefix devices where applicable. 

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**2** 

**MMBZxxVxL, SZMMBZxxVxL Series** 

## **TYPICAL CHARACTERISTICS** 

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MMBZ15VDL, SZMMBZ15VDL MMBZ27VCL, SZMMBZ27VCL<br>17 29<br>BIDIRECTIONAL<br>BIDIRECTIONAL<br>16 28<br>15 27<br>14 26<br>UNIDIRECTIONAL<br>13 25<br>-�40 +�25 +�85 +�125 -�55 +�25 +�85 +�125<br>TEMPERATURE (°C) TEMPERATURE (°C)<br>(VBR @ I T)<br>(VBR @ I T)<br>BREAKDOWN VOLTAGE (VOLTS)<br>BREAKDOWN VOLTAGE (VOLTS)<br>**----- End of picture text -----**<br>


**Figure 1. Typical Breakdown Voltage versus Temperature** 

**Figure 2. Typical Breakdown Voltage versus Temperature** 

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1000 300<br>250<br>100<br>ALUMINA SUBSTRATE<br>200<br>10<br>150<br>1<br>100<br>FR-5 BOARD<br>0.1<br>50<br>0.01 0<br>-�40 +�25 +�85 +�125 0 25 50 75 100 125 150 175<br>TEMPERATURE (°C) TEMPERATURE (°C)<br>Figure 3. Typical Leakage Current Figure 4. Steady State Power Derating Curve<br>versus Temperature<br>100<br>PULSE WIDTH (tP) IS DEFINED<br>AS THAT POINT WHERE THE 90<br>t r ≤ 10 �s<br>PEAK CURRENT DECAYS TO<br>80<br>100 PEAK VALUE�—�I PP 50% OF IPP.<br>70<br>60<br>IPP 50<br>HALF VALUE�—<br>2<br>40<br>50<br>30<br>t P 20<br>10<br>0<br>0 1 2 3 4 00 25 50 75 100 125 150 175 200<br>t, TIME (ms) TA, AMBIENT TEMPERATURE (°C)<br>IR (nA)<br>PD , POWER DISSIPATION (mW)<br>C<br>°<br>VALUE (%)<br>OR CURRENT @ TA = 25<br>PEAK PULSE DERATING IN % OF PEAK POWER<br>**----- End of picture text -----**<br>


**Figure 5. Pulse Waveform** 

**Figure 6. Pulse Derating Curve** 

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**3** 

**MMBZxxVxL, SZMMBZxxVxL Series** 

## **TYPICAL APPLICATIONS** 

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VBatt<br>Single Wire<br>CAN Transceiver<br>47  � H<br>Bus<br>Loss of<br>RLoad Ground<br>9.09 k �  1% Protection<br>* Circuit<br>CLoad Load<br>220 pF 10% GND<br>ECU Connector<br>**----- End of picture text -----**<br>


*ESD Protection − MMBZ27VCL or equivalent. May be located in each ECU (CLoad needs to be reduced accordingly) or at a central point near the DLC. 

**Figure 7. Single Wire CAN Network** 

Figure  is the recommended solution for transient EMI/ESD protection. This circuit is shown in the Society of Automotive Engineers February, 2000 J2411 “Single Wire CAN Network for Vehicle Applications” specification (Figure 6, page 11). Note: the dual common anode zener configuration shown above is electrically equivalent to a dual common cathode zener configuration. 

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**4** 

**MMBZxxVxL, SZMMBZxxVxL Series** 

## **PACKAGE DIMENSIONS** 

**SOT−23 (TO−236)** CASE 318−08 ISSUE AR 

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D NOTES:<br>1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.<br>2. CONTROLLING DIMENSION: MILLIMETERS.<br>3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH.<br>0.25 MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF<br>3 THE BASE MATERIAL.<br>o E eat [|] HE T = 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH,PROTRUSIONS, OR GATE BURRS.<br>1 2<br>MILLIMETERS INCHES<br>DIM MIN NOM MAX MIN NOM MAX<br>L A 0.89 1.00 1.11 0.035 0.039 0.044<br>3X b L1 A1b 0.010.37 0.060.44 0.100.50 0.0000.015 0.0020.017 0.0040.020<br>e VIEW C c 0.08 0.14 0.20 0.003 0.006 0.008<br>TOP VIEW D 2.80 2.90 3.04 0.110 0.114 0.120<br>E 1.20 1.30 1.40 0.047 0.051 0.055<br>e 1.78 1.90 2.04 0.070 0.075 0.080<br>L 0.30 0.43 0.55 0.012 0.017 0.022<br>A L1 0.35 0.54 0.69 0.014 0.021 0.027<br>H E 2.10 2.40 2.64 0.083 0.094 0.104<br>T 0 ° −−− 10 ° 0 ° −−− 10 °<br>a A1 SIDE VIEW SEE VIEW C c STYLE 9:<br>END VIEW PIN 1. ANODE<br>2. ANODE<br>3. CATHODE<br>RECOMMENDED<br>SOLDERING FOOTPRINT*<br>3X<br>2.90 r o 0.90<br>LO \ ct<br>3X 0.80 | LL 0.95<br>PITCH<br>DIMENSIONS: MILLIMETERS<br>**----- End of picture text -----**<br>


*For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. 

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**5**