MMBZ12VALT1G

## MMBZxxxALT1G Series, SZMMBZxxxALT1G Series 

## 24 and 40 Watt Peak Power Zener Transient Voltage Suppressors 

## **SOT−23 Dual Common Anode Zeners for ESD Protection** 

These dual monolithic silicon Zener diodes are designed for applications requiring transient overvoltage protection capability. They are intended for use in voltage and ESD sensitive equipment such as computers, printers, business machines, communication systems, medical equipment and other applications. Their dual junction common anode design protects two separate lines using only one package. These devices are ideal for situations where board space is at a premium. 

## **Features** 

- SOT−23 Package Allows Either Two Separate Unidirectional Configurations or a Single Bidirectional Configuration 

- Working Peak Reverse Voltage Range − 3 V to 26 V 

- Standard Zener Breakdown Voltage Range − 5.6 V to 47 V 

- Peak Power − 24 or 40 W @ 1.0 ms (Unidirectional), per Figure 6 Waveform 

- ESD Rating: 

   - Class 3B (> 16 kV) per the Human Body Model 

   - Class C (> 400 V) per the Machine Model 

- ESD Rating of IEC61000−4−2 Level 4, ±30 kV Contact Discharge 

- Maximum Clamping Voltage @ Peak Pulse Current 

- Low Leakage < 5.0 A 

- Flammability Rating UL 94 V−0 

- SZ Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable 

- These Devices are Pb−Free and are RoHS Compliant 

## **Mechanical Characteristics** 

**CASE:** Void-free, transfer-molded, thermosetting plastic case **FINISH:** Corrosion resistant finish, easily solderable 

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SOT−23<br>CASE 318<br>STYLE 12<br>**----- End of picture text -----**<br>


CATHODE  1 CATHODE  2 

3  ANODE 

**MARKING DIAGRAM** XXXM 1 — XXX = Specific Device Code M = Date Code = Pb−Free Package (Note: Microdot may be in either location) 

## **ORDERING INFORMATION** 

See detailed ordering and shipping information on page 2 of this data sheet. 

## **DEVICE MARKING INFORMATION** 

See specific marking information in the device marking column of the table on page 3 of this data sheet. 

## **MAXIMUM CASE TEMPERATURE FOR SOLDERING PURPOSES:** 

260°C for 10 Seconds 

Package designed for optimal automated board assembly Small package size for high density applications Available in 8 mm Tape and Reel 

Use the Device Number to order the 7 inch/3,000 unit reel. Replace the “T1” with “T3” in the Device Number to order the 13 inch/10,000 unit reel. 

Publication Order Number: **MMBZ5V6ALT1/D** 

**1** 

© Semiconductor Components Industries, LLC, 1996 **October, 2016 − Rev. 19** 

**MMBZxxxALT1G Series, SZMMBZxxxALT1G Series** 

## **MAXIMUM RATINGS** 

|**MAXIMUM RATINGS**||||
|---|---|---|---|
|**Rating**|**Symbol**|**Value**|**Unit**|
|Peak Power Dissipation @ 1.0 ms (Note 1)<br>MMBZ5V6ALT1G thru MMBZ9V1ALT1G<br>@ TL ≤25°C<br>MMBZ12VALT1G thru MMBZ47VALT1G|Ppk|24<br>40|W|
|Total Power Dissipation on FR−5 Board (Note 2)<br>@ TA= 25°C<br>Derate above 25°C<br>Thermal Resistance Junction−to−Ambient|°PD°<br>R�JA|225<br>1.8<br>556|mW°<br>mW/°C<br>°C/W|
|Total Power Dissipation on Alumina Substrate (Note 3)<br>@ TA= 25°C<br>Derate above 25°C<br>Thermal Resistance Junction−to−Ambient|°PD°<br>R�JA|300<br>2.4<br>417|°mW<br>mW/°C<br>°C/W|
|Junction and Storage Temperature Range|TJ, Tstg|−55 to +150|°C|
|Lead Solder Temperature − Maximum (10 Second Duration)|TL|260|°C|



Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 

1. Non−repetitive current pulse per Figure 6 and derate above TA = 25 ° C per Figure 7. 

2. FR−5 = 1.0 x 0.75 x 0.62 in. 

3. Alumina = 0.4 x 0.3 x 0.024 in, 99.5% alumina. 

*Other voltages may be available upon request. 

## **ORDERING INFORMATION** 

|**ORDERING INFORMATION**|||
|---|---|---|
|**Device**|**Package**|**Shipping**†|
|MMBZ5V6ALT1G|SOT−23<br>(Pb−Free)|3,000 / Tape & Reel|
|SZMMBZ5V6ALT1G*|SOT−23<br>(Pb−Free)|3,000 / Tape & Reel|
|MMBZ5V6ALT3G|SOT−23<br>(Pb−Free)|10,000 / Tape & Reel|
|MMBZ6VxALT1G|SOT−23<br>(Pb−Free)|3,000 / Tape & Reel|
|SZMMBZ6VxALT1G*|SOT−23<br>(Pb−Free)|3,000 / Tape & Reel|
|MMBZ6VxALT3G|SOT−23<br>(Pb−Free)|10,000 / Tape & Reel|
|MMBZ9V1ALT1G|SOT−23<br>(Pb−Free)|3,000 / Tape & Reel|
|MMBZ9V1ALT13G|SOT−23<br>(Pb−Free)|10,000 / Tape & Reel|
|MMBZxxVALT1G|SOT−23<br>(Pb−Free)|3,000 / Tape & Reel|
|SZMMBZxxVALT1G*|SOT−23<br>(Pb−Free)|3,000 / Tape & Reel|
|MMBZxxVALT3G|SOT−23<br>(Pb−Free)|10,000 / Tape & Reel|
|SZMMBZxxVALT3G*|SOT−23<br>(Pb−Free)|10,000 / Tape & Reel|
|SZMMBZxxVTALT1G*|SOT−23<br>(Pb−Free)|3,000 / Tape & Reel|



†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. 

*SZ Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable 

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**2** 

**MMBZxxxALT1G Series, SZMMBZxxxALT1G Series** 

## **ELECTRICAL CHARACTERISTICS** 

(TA = 25 ° C unless otherwise noted) 

**UNIDIRECTIONAL** (Circuit tied to Pins 1 and 3 or 2 and 3) 

|**Symbol**|**Parameter**|
|---|---|
|IPP|Maximum Reverse Peak Pulse Current|
|VC|Clamping Voltage @ IPP|
|VRWM|Working Peak Reverse Voltage|
|IR<br>|Maximum Reverse Leakage Current @ VRWM<br>|
|VBR|Breakdown Voltage @ IT|
|IT|Test Current|
|�VBR|Maximum Temperature Coefficient of VBR|
|IF|Forward Current|
|VF|Forward Voltage @ IF|
|ZZT|Maximum Zener Impedance @ IZT|
|IZK|Reverse Current|
|ZZK|Maximum Zener Impedance @ IZK|



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I<br>IF<br>VC VBR VRWM<br>V<br>IR VF<br>IT<br>IPP<br>Uni−Directional TVS<br>**----- End of picture text -----**<br>


**ELECTRICAL CHARACTERISTICS** (TA = 25 ° C unless otherwise noted) **UNIDIRECTIONAL** (Circuit tied to Pins 1 and 3 or Pins 2 and 3) 

(VF = 0.9 V Max @ IF = 10 mA) (5% Tolerance) 

**24 WATTS** 

|(VF= 0.9 V Max @ IF=|10 mA) (5%|Toleranc|e)|**24 WATTS**|**24 WATTS**|**24 WATTS**|**24 WATTS**|||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|**Device***|**Device**<br>**Marking**|**VRWM**|**IR @**<br>**VRWM**|**Breakdown Voltage**||||**Max Zener**<br>**Impedance**(Note 5)|||**VC @ IPP**<br>(Note 6)||**�VBR**|
|||||**VBR**(Note 4)**(V)**|||**@ IT**|**ZZT**<br>**@ IZT**|**ZZK @ IZK**||**VC**|**IPP**||
|||**Volts**|**�A**|**Min**|**Nom**|**Max**|**mA**|�|�|**mA**|**V**|**A**|**mV/**�**C**|
|MMBZ5V6ALT1G/T3G|5A6|3.0|5.0|5.32|5.6|5.88|20|11|1600|0.25|8.0|3.0|1.26|
|MMBZ6V2ALT1G|6A2|3.0|0.5|5.89|6.2|6.51|1.0|−|−|−|8.7|2.76|2.80|
|MMBZ6V8ALT1G|6A8|4.5|0.5|6.46|6.8|7.14|1.0|−|−|−|9.6|2.5|3.4|
|MMBZ9V1ALT1G|9A1|6.0|0.3|8.65|9.1|9.56|1.0|−|−|−|14|1.7|7.5|



|(VF= 0.9 V Max @ IF=|10 mA) (5% Tolerance)|10 mA) (5% Tolerance)|10 mA) (5% Tolerance)|**40 WATTS**|**40 WATTS**|**40 WATTS**|**40 WATTS**||||
|---|---|---|---|---|---|---|---|---|---|---|
|**Device***|**Device**<br>**Marking**|**VRWM**|**IR @**<br>**VRWM**|**Breakdown Voltage**||||**VC @ IPP**(Note 6)||**�VBR**|
|||||**VBR**(Note 4)**(V)**|||**@ IT**|**VC**|**IPP**||
|||**Volts**|**nA**|**Min**|**Nom**|**Max**|**mA**|**V**|**A**|**mV/**�**C**|
|MMBZ12VALT1G|12A|8.5|200|11.40|12|12.60|1.0|17|2.35|7.5|
|MMBZ15VALT1G|15A|12|50|14.25|15|15.75|1.0|21|1.9|12.3|
|MMBZ16VALT1G|16A|13|50|15.20|16|16.80|1.0|23|1.7|13.8|
|MMBZ18VALT1G|18A|14.5|50|17.10|18|18.90|1.0|25|1.6|15.3|
|MMBZ20VALT1G|20A|17|50|19.00|20|21.00|1.0|28|1.4|17.2|
|MMBZ27VALT1G/T3G|27A|22|50|25.65|27|28.35|1.0|40|1.0|24.3|
|MMBZ33VALT1G|33A|26|50|31.35|33|34.65|1.0|46|0.87|30.4|
|MMBZ47VALT1G|47A|38|50|44.65|47|49.35|1.0|54|0.74|43.1|
|(VF= 0.9 V Max @ IF=|10 mA) (2% Tolerance)||||**40 WATTS**||||||
|**Device***|**Device**<br>**Marking**|**VRWM**|**IR @**<br>**VRWM**|**Breakdown Voltage**||||**VC @ IPP**(Note 6)||**�VBR**|
|||||**VBR**(Note 4)**(V)**|||**@ IT**|**VC**|**IPP**||
|||**Volts**|**nA**|**Min**|**Nom**|**Max**|**mA**|**V**|**A**|**mV/**�**C**|
|MMBZ16VTALT1G|16T|13|50|15.68|16|16.32|1.0|23|1.7|13.8|
|MMBZ47VTALT1G|47T|38|50|46.06|47|47.94|1.0|54|0.74|43.1|



Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 

4. VBR measured at pulse test current IT at an ambient temperature of 25 ° C. 

5. ZZT and ZZK are measured by dividing the AC voltage drop across the device by the AC current applied. The specified limits are for IZ(AC) = 0.1 IZ(DC), with the AC frequency = 1.0 kHz. 

6. Surge current waveform per Figure 6 and derate per Figure 7 

* Include SZ-prefix devices where applicable. 

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**3** 

**MMBZxxxALT1G Series, SZMMBZxxxALT1G Series** 

## **TYPICAL CHARACTERISTICS** 

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18 1000<br>15<br>100<br>12<br>10<br>9<br>1<br>6<br>0.1<br>3<br>0 0.01<br>−40 0 +50 +100 +150 −40 +25 +85 +125<br>TEMPERATURE ( ° C) TEMPERATURE ( ° C)<br>)T<br> @ I  (nA)<br>BR IR<br>(V<br>BREAKDOWN VOLTAGE (VOLTS)<br>**----- End of picture text -----**<br>


**Figure 1. Typical Breakdown Voltage versus Temperature** 

**Figure 2. Typical Leakage Current versus Temperature** 

(Upper curve for each voltage is bidirectional mode, lower curve is unidirectional mode) 

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320 60<br>280<br>50<br>240<br>40<br>200 27 V<br>5.6 V<br>160 30<br>120<br>15 V 20<br>80<br>10 33 V<br>40<br>0 0<br>0 1 2 3 0 1 2 3<br>BIAS (V) BIAS (V)<br>C, CAPACITANCE (pF) C, CAPACITANCE (pF)<br>**----- End of picture text -----**<br>


**Figure 3. Typical Capacitance versus Bias Voltage** (Upper curve for each voltage is unidirectional mode, lower curve is bidirectional mode) 

**Figure 4. Typical Capacitance versus Bias Voltage** (Upper curve for each voltage is unidirectional mode, lower curve is bidirectional mode) 

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300<br>250<br>ALUMINA SUBSTRATE<br>200<br>150<br>100<br>FR−5 BOARD<br>50<br>0<br>0 25 50 75 100 125 150 175<br>TEMPERATURE ( ° C)<br>, POWER DISSIPATION (mW)<br>D<br>P<br>**----- End of picture text -----**<br>


**Figure 5. Steady State Power Derating Curve** 

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**4** 

**MMBZxxxALT1G Series, SZMMBZxxxALT1G Series** 

## **TYPICAL CHARACTERISTICS** 

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PULSE WIDTH (tP) IS DEFINED<br>t r ≤  10  � s AS THAT POINT WHERE THE<br>PEAK CURRENT DECAYS TO<br>100 50% OF IPP.<br>PEAK VALUE −I PP<br>IPP<br>HALF VALUE −<br>2<br>50<br>t P<br>0<br>0 1 2 3 4<br>t, TIME (ms)<br>VALUE (%)<br>**----- End of picture text -----**<br>


**Figure 6. Pulse Waveform** 

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100<br>RECTANGULAR<br>WAVEFORM, TA = 25 ° C<br>BIDIRECTIONAL<br>10<br>UNIDIRECTIONAL<br>1<br>0.1 1 10 100 1000<br>PW, PULSE WIDTH (ms)<br>, PEAK SURGE POWER (W)<br>pk<br>P<br>**----- End of picture text -----**<br>


**Figure 8. Maximum Non−repetitive Surge Power, Ppk versus PW** 

Power is defined as VRSM x IZ(pk) where VRSM is the clamping voltage at IZ(pk). 

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100<br>90<br>80<br>70<br>60<br>50<br>40<br>30<br>20<br>10<br>0<br>0 25 50 75 100 125 150 175 200<br>TA, AMBIENT TEMPERATURE ( ° C)<br>Figure 7. Pulse Derating Curve<br>100<br>RECTANGULAR<br>WAVEFORM, T A  = 25 ° C<br>BIDIRECTIONAL<br>10<br>UNIDIRECTIONAL<br>1<br>0.1 1 10 100 1000<br>PW, PULSE WIDTH (ms)<br>C<br>°<br> = 25<br>A<br>POWER OR CURRENT @ T<br>PEAK PULSE DERATING IN % OF PEAK<br>, PEAK SURGE POWER (W)<br>pk<br>P<br>**----- End of picture text -----**<br>


**Figure 9. Maximum Non−repetitive Surge Power, Ppk(NOM) versus PW** 

Power is defined as VZ(NOM) x IZ(pk) where VZ(NOM) is the nominal Zener voltage measured at the low test current used for voltage classification. 

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**5** 

**MMBZxxxALT1G Series, SZMMBZxxxALT1G Series** 

## **TYPICAL COMMON ANODE APPLICATIONS** 

A dual junction common anode design in a SOT−23 package protects two separate lines using only one package. This adds flexibility and creativity to PCB design especially 

when board space is at a premium. Two simplified examples of TVS applications are illustrated below. 

## **Computer Interface Protection** 

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A<br>KEYBOARD B<br>TERMINAL FUNCTIONAL<br>I/O C<br>PRINTER DECODER<br>D<br>ETC.<br>GND<br>MMBZ5V6ALT1G<br>THRU<br>MMBZ47VALT1G<br>**----- End of picture text -----**<br>


**Microprocessor Protection** 

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VDD<br>VGG<br>ADDRESS BUS<br>RAM ROM<br>DATA BUS<br>CPU<br>I/O MMBZ5V6ALT1G<br>THRU<br>CLOCK MMBZ47VALT1G<br>CONTROL BUS<br>GND<br>**----- End of picture text -----**<br>


MMBZ5V6ALT1G THRU MMBZ47VALT1G 

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**6** 

**MMBZxxxALT1G Series, SZMMBZxxxALT1G Series** 

## **PACKAGE DIMENSIONS** 

**SOT−23 (TO−236)** CASE 318−08 ISSUE AR 

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D NOTES:<br>1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.<br>2. CONTROLLING DIMENSION: MILLIMETERS.<br>3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH.<br>0.25 MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF<br>3 THE BASE MATERIAL.<br>o E eat [|] HE T = 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH,PROTRUSIONS, OR GATE BURRS.<br>1 2<br>MILLIMETERS INCHES<br>DIM MIN NOM MAX MIN NOM MAX<br>L A 0.89 1.00 1.11 0.035 0.039 0.044<br>3X b L1 A1b 0.010.37 0.060.44 0.100.50 0.0000.015 0.0020.017 0.0040.020<br>e VIEW C c 0.08 0.14 0.20 0.003 0.006 0.008<br>TOP VIEW D 2.80 2.90 3.04 0.110 0.114 0.120<br>E 1.20 1.30 1.40 0.047 0.051 0.055<br>e 1.78 1.90 2.04 0.070 0.075 0.080<br>L 0.30 0.43 0.55 0.012 0.017 0.022<br>A L1 0.35 0.54 0.69 0.014 0.021 0.027<br>H E 2.10 2.40 2.64 0.083 0.094 0.104<br>T 0 ° −−− 10 ° 0 ° −−− 10 °<br>a A1 SIDE VIEW SEE VIEW C c STYLE 12:<br>END VIEW PIN 1. CATHODE<br>2. CATHODE<br>3. ANODE<br>RECOMMENDED<br>SOLDERING FOOTPRINT*<br>3X<br>2.90 r o 0.90<br>LO \ ct<br>3X 0.80 | LL 0.95<br>PITCH<br>DIMENSIONS: MILLIMETERS<br>**----- End of picture text -----**<br>


*For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. 

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