MMBTH10-4LT1G

Bipolar - RF Transistor, NPN, 25 V, 800 MHz, 225 mW, 999 A, SOT-23

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Manufacturer: ONSEMI
Product type: Single Bipolar Junction Transistors - BJT
Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:25V; Transition Frequency ft:800MHz; Power Dissipation Pd:225mW; ; Available until stocks are exhausted Alternative available
MSL: MSL 1 - Unlimited
SVHC: No SVHC (25-Jun-2025)
No. of Pins: 3Pins
Product Range: -
Qualification: AEC-Q101
Power Dissipation: 225mW
Transistor Mounting: Surface Mount
Transistor Polarity: NPN
Transition Frequency: 800MHz
Transistor Case Style: SOT-23
DC Current Gain hFE Min: 120hFE
Operating Temperature Max: 150°C
Continuous Collector Current: 999A
Collector Emitter Voltage Max: 25V

Delivery and price
Units per pack	1500
Price	0.029 €
Current stock	1000+
Lead time	7 days

Datasheet

Updated at March 13, 2026