MMBTA42,215

Bipolar (BJT) Single Transistor, NPN, 300 V, 100 mA, 250 mW, SOT-23, Surface Mount

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Manufacturer: NEXPERIA
Product type:
Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:300V; Transition Frequency ft:50MHz; Power Dissipation Pd:250mW; DC Collector Current:100mA; DC Current Gain hFE:40hFE; Transistor Ca
MSL: MSL 1 - Unlimited
SVHC: No SVHC (25-Jun-2025)
No. of Pins: 3Pins
Product Range: -
Qualification: -
Power Dissipation: 250mW
Transistor Mounting: Surface Mount
Transistor Polarity: NPN
Transition Frequency: 50MHz
Transistor Case Style: SOT-23
DC Current Gain hFE Min: 40hFE
Operating Temperature Max: 150°C
Continuous Collector Current: 100mA
Collector Emitter Voltage Max: 300V

Delivery and price
Units per pack	1500
Price	0.052 €
Current stock	500+
Lead time	30 days

Datasheet

## **DISCRETE SEMICONDUCTORS** 

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DATA SHEET<br>k, halfpage<br>M3D088<br>**----- End of picture text -----**<br>


**MMBTA42** NPN high-voltage transistor 

2000 Apr 11 

**Philips Semiconductors** 

## **NPN high-voltage transistor** 

## **MMBTA42** 

## **FEATURES** 

- Low current (max. 100 mA) 

- High voltage (max. 300 V). 

## **APPLICATIONS** 

## **PINNING** 

|**PINNING**||
|---|---|
|**PIN**|**DESCRIPTION**|
|1|base|
|2|emitter|
|3|collector|



- Telephony 

- Professional communication equipment. 

## **DESCRIPTION** 

NPN high-voltage transistor in a SOT23 plastic package. PNP complement: MMBTA92. 

## **MARKING** 

|**MARKING**||
|---|---|
|**TYPE NUMBER**|**MARKING CODE**(1)|
|MMBTA42|7D∗|



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handbook, halfpage 3<br>3<br>1<br>2<br>1 2<br>Top view MAM255<br>**----- End of picture text -----**<br>


## **Note** 

1. ∗ = p: made in Hong Kong. 

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Fig.1  Simplified outline (SOT23) and symbol.<br>**----- End of picture text -----**<br>


- ∗ = t: made in Malaysia. 

## **LIMITING VALUES** 

In accordance with the Absolute Maximum Rating System (IEC 60134). 

|**SYMBOL**|**PARAMETER**|**CONDITIONS**|**MIN.**|**MAX.**|**UNIT**|
|---|---|---|---|---|---|
|VCBO|collector-base voltage|open emitter|−|300|V|
|VCEO|collector-emitter voltage|open base|−|300|V|
|VEBO|emitter-base voltage|open collector|−|6|V|
|IC|collector current (DC)||−|100|mA|
|ICM|peak collector current||−|200|mA|
|IBM|peak base current||−|100|mA|
|Ptot|total power dissipation|Tamb≤25°C; note 1|−|250|mW|
|Tstg|storage temperature||−65|+150|°C|
|Tj|junction temperature||−|150|°C|
|Tamb|operating ambient temperature||−65|+150|°C|



## **Note** 

1. Transistor mounted on an FR4 printed-circuit board. 

2000 Apr 11 

2 

Philips Semiconductors 

## NPN high-voltage transistor 

## MMBTA42 

## **THERMAL CHARACTERISTICS** 

|**SYMBOL**|**PARAMETER**|**CONDITIONS**|**VALUE**|**UNIT**|
|---|---|---|---|---|
|Rth j-a|thermal resistance from junction to ambient|note 1|500|K/W|



## **Note** 

1. Transistor mounted on an FR4 printed-circuit board. 

## **CHARACTERISTICS** 

Tamb = 25 ° 

|**SYMBOL**|**PARAMETER**|**CONDITIONS**|**MIN.**|**MAX.**|**UNIT**|
|---|---|---|---|---|---|
|ICBO|collector cut-off current|IE= 0; VCB= 200 V|−|100|nA|
|IEBO|emitter cut-off current|IC= 0; VEB= 6 V|−|100|nA|
|hFE|DC current gain|VCE= 10 V<br>IC= 1 mA<br>IC= 10 mA<br>IC= 30 mA|25<br>40<br>40|−<br>−<br>−||
|VCEsat|collector-emitter saturation voltage|IC= 20 mA; IB= 2 mA|−|500|mV|
|VBEsat|base-emitter saturation voltage|IC= 20 mA; IB= 2 mA|−|900|mV|
|Cre|feedback capacitance|IC= ic= 0; VCB= 20 V;<br>f = 1 MHz|−|3|pF|
|fT|transition frequency|IC= 10 mA; VCE= 20 V;<br>f = 100 MHz|50|−|MHz|



2000 Apr 11 

3 

Philips Semiconductors 

## NPN high-voltage transistor 

## MMBTA42 

## **PACKAGE OUTLINE** 

## **Plastic surface mounted package; 3 leads** 

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SOT23<br>**----- End of picture text -----**<br>


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D B E A X<br>HE v M A<br>3<br>Q<br>A<br>A1<br>1 2 c<br>e1 bp w M B Lp<br>e<br>detail X<br>0 1 2 mm<br>scale<br>DIMENSIONS (mm are the original dimensions)<br>UNIT A max.A1 bp c D E  e e1 HE Lp Q v w<br>1.1 0.48 0.15 3.0 1.4 2.5 0.45 0.55<br>mm 0.1 1.9 0.95 0.2 0.1<br>0.9 0.38 0.09 2.8 1.2 2.1 0.15 0.45<br>OUTLINE  REFERENCES EUROPEAN<br>ISSUE DATE<br>VERSION  IEC  JEDEC  EIAJ PROJECTION<br>97-02-28<br> SOT23 TO-236AB<br>99-09-13<br>**----- End of picture text -----**<br>


2000 Apr 11 

4 

Philips Semiconductors 

## NPN high-voltage transistor 

## MMBTA42 

## **DATA SHEET STATUS** 

|**DATA SHEET STATUS**|||
|---|---|---|
|**DATA SHEET STATUS**|**PRODUCT**<br>**STATUS**|**DEFINITIONS** (1)|
|Objective specifcation|Development|This data sheet contains the design target or goal specifcations for<br>product development. Specifcation may change in any manner without<br>notice.|
|Preliminary specifcation|Qualifcation|This data sheet contains preliminary data, and supplementary data will be<br>published at a later date. Philips Semiconductors reserves the right to<br>make changes at any time without notice in order to improve design and<br>supply the best possible product.|
|Product specifcation|Production|This data sheet contains fnal specifcations. Philips Semiconductors<br>reserves the right to make changes at any time without notice in order to<br>improve design and supply the best possible product.|



## **Note** 

1. Please consult the most recently issued data sheet before initiating or completing a design. 

## **DEFINITIONS** 

**Short-form specification**  The data in a short-form specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. 

**Limiting values definition**  Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. 

**Application information**  Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or modification. 

## **DISCLAIMERS** 

**Life support applications**  These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application. 

**Right to make changes**  Philips Semiconductors reserves the right to make changes, without notice, in the products, including circuits, standard cells, and/or software, described or contained herein in order to improve design and/or performance. Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no licence or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified. 

2000 Apr 11 

5 

Philips Semiconductors 

NPN high-voltage transistor 

MMBTA42 

## **NOTES** 

2000 Apr 11 

6 

Philips Semiconductors 

NPN high-voltage transistor 

MMBTA42 

## **NOTES** 

2000 Apr 11 

7 

## **Philips Semiconductors – a worldwide company** 

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**For all other countries apply to:** Philips Semiconductors, International Marketing & Sales Communications, Building BE-p, P.O. Box 218, 5600 MD EINDHOVEN, The Netherlands, Fax. +31 40 27 24825 

**Internet:** http://www.semiconductors.philips.com 

© Philips Electronics N.V. 2000 

SCA 69 

All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. 

The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. 

Printed in The Netherlands 

**==> picture [214 x 95] intentionally omitted <==**

Date of release: 2000 Apr 11 Document order number: 9397 750 06939 

603506/01/pp8

Updated at June 1, 2026

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