MMBT918LT1G

Bipolar - RF Transistor, General Purpose, NPN, 15 V, 600 MHz, 225 mW, 50 mA, SOT-23

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Manufacturer: ONSEMI
Product type: Single Bipolar Junction Transistors - BJT
Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:15V; Transition Frequency ft:600MHz; Power Dissipation Pd:225mW; DC Collector Current:50mA; DC Current Gain hFE:20hFE; Tran
MSL: MSL 1 - Unlimited
SVHC: No SVHC (25-Jun-2025)
No. of Pins: 3Pins
Product Range: -
Qualification: -
Power Dissipation: 225mW
Transistor Mounting: Surface Mount
Transistor Polarity: NPN
Transition Frequency: 600MHz
Transistor Case Style: SOT-23
DC Current Gain hFE Min: 20hFE
Operating Temperature Max: 150°C
Continuous Collector Current: 50mA
Collector Emitter Voltage Max: 15V

Delivery and price
Units per pack	1500
Price	0.035 €
Current stock	10+
Lead time	30 days

Datasheet

Updated at March 13, 2026