MMBT6517LT1G

Bipolar (BJT) Single Transistor, General Purpose, NPN, 350 V, 100 mA, 225 mW, SOT-23, Surface Mount

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Manufacturer: ONSEMI
Product type: Single Bipolar Junction Transistors - BJT
Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:350V; Transition Frequency ft:200MHz; Power Dissipation Pd:225mW; DC Collector Current:100mA; DC Current Gain hFE:15hFE; Transistor Case Sty
No. of Pins: 3Pins
Product Range: MMBTxxxx
Qualification: -
Power Dissipation: 225mW
Transistor Mounting: Surface Mount
Transistor Polarity: NPN
Transition Frequency: 200MHz
Transistor Case Style: SOT-23
DC Current Gain hFE Min: 15hFE
Operating Temperature Max: 150°C
Continuous Collector Current: 100mA
Collector Emitter Voltage Max: 350V

Delivery and price
Units per pack	1500
Price	0.077 €
Current stock	10+
Lead time	30 days

Datasheet

Updated at March 14, 2026