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MMBFJ310LT3G
JFET Transistor, 25 V, 60 mA, 25 V, SOT-23, 3 Pin, 150 °C
⚠️ Reference pricing provided. In case of supply shortages, we will connect you with our trusted procurement partners to ensure your project's continuity.
- Manufacturer: ONSEMI
- Product type: JFETs
- Breakdown Voltage Vbr:25V; Zero Gate Voltage Drain Current Idss Min:24mA; Zero Gate Voltage Drain Current Idss Max:60mA; Gate-Source Cutoff Voltage Vgs(off) Max:25V; Transistor Case Style
- MSL: MSL 1 - Unlimited
- SVHC: No SVHC (25-Jun-2025)
- No. of Pins: 3 Pin
- Channel Type: N Channel
- Product Range: -
- Qualification: AEC-Q101
- Transistor Mounting: Surface Mount
- Transistor Case Style: SOT-23
- Operating Temperature Max: 150°C
- Gate Source Cutoff Voltage Max: 25V
- Gate Source Breakdown Voltage Max: 25V
- Zero Gate Voltage Drain Current Max: 60mA
| Delivery and price | |
|---|---|
| Units per pack | 5000 |
| Price | 0.076 € |
| Current stock | 1000+ |
| Lead time | 30 days |
Datasheet
## MMBFJ309L, MMBFJ310L, SMMBFJ310L ## JFET - VHF/UHF Amplifier Transistor ## **N−Channel** ## **http://onsemi.com** ## **Features** - AEC−Q101 Qualified and PPAP Capable - S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements - These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant **==> picture [93 x 79] intentionally omitted <==** **----- Start of picture text -----**<br> 2 SOURCE<br>3<br>GATE<br>€<br>1 DRAIN<br>**----- End of picture text -----**<br> **MAXIMUM RATINGS** |**MAXIMUM RATINGS**|**MAXIMUM RATINGS**|**MAXIMUM RATINGS**|**MAXIMUM RATINGS**|**MAXIMUM RATINGS**|**MAXIMUM RATINGS**| |---|---|---|---|---|---| |**Rating**<br>**Symbol**<br>**Value**<br>**Unit**<br>Drain−Source Voltage<br>VDS<br>25<br>Vdc<br>Gate−Source Voltage<br>VGS<br>25<br>Vdc<br>Gate Current<br>IG<br>10<br>mAdc<br>**THERMAL CHARACTERISTICS**<br>**SOT−23 (TO−236)**<br>**CASE 318**<br>**STYLE 10**<br>1<br>2<br>3<br>~~——~~|||||| |**Characteristic**|**Symbol**|**Max**|**Unit**|**MARKING DIAGRAM**|| |Total Device Dissipation FR−5 Board,<br>(Note 1) TA= 25°C<br>Derate above 25°C<br>Thermal Resistance, Junction−to−Ambient<br>Junction and Storage Temperature|PD<br>R JA<br>TJ, Tstg|225<br>1.8<br>556<br>−55 to +150|mW<br>mW/°C<br>°C/W<br>°C|1<br>6x M<br>=|| 6x M = 1 6x = Device Code Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. FR−5 = 1.0 x 0.75 x 0.062 in. x = U for MMBFJ309L x = T for MMBFJ310L, SMMBFJ310L M = Date Code* = Pb−Free Package (Note: Microdot may be in either location) *Date Code orientation and/or overbar may vary depending upon manufacturing location. ## **ORDERING INFORMATION** |**Device**|**Package**|**Shipping**†| |---|---|---| |MMBFJ309LT1G|SOT−23<br>(Pb−Free)|3,000 / Tape &<br>Reel| |MMBFJ310LT1G|SOT−23<br>(Pb−Free)|3,000 / Tape &<br>Reel| |SMMBFJ310LT1G|SOT−23<br>(Pb−Free)|3,000 / Tape &<br>Reel| |SMMBFJ310LT3G|(PbFree)<br>SOT−23<br>(Pb−Free)|10,000 / Tape &<br>Reel| - †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Publication Order Number: **MMBFJ309LT1/D** **1** © Semiconductor Components Industries, LLC, 2011 **November, 2011 − Rev. 5** ## **MMBFJ309L, MMBFJ310L, SMMBFJ310L** ## **ELECTRICAL CHARACTERISTICS** (TA = 25 ° C unless otherwise noted) |**ELECTRICAL CHARACTERISTICS**(TA= 25°C unless otherwise noted)|||||| |---|---|---|---|---|---| |**Characteristic**|**Symbol**|**Min**|**Typ**|**Max**|**Unit**| |**OFF CHARACTERISTICS**|||||| |Gate−Source Breakdown Voltage<br>(IG= −1.0�Adc, VDS= 0)|V(BR)GSS|−25|−|−|Vdc| |Gate Reverse Current (VGS= −15 Vdc)<br>Gate Reverse Current(VGS= −15 Vdc, TA= 125°C)|IGSS|−<br>−|−<br>−|−1.0<br>−1.0|nAdc<br>�Adc| |Gate Source Cutoff Voltage<br>MMBFJ309<br>(VDS= 10 Vdc, ID= 1.0 nAdc)<br>MMBFJ310, SMMBFJ310|VGS(off)|−1.0<br>−2.0|−<br>−|−4.0<br>−6.5|Vdc| |**ON CHARACTERISTICS**|||||| |Zero−Gate−Voltage Drain Current<br>MMBFJ309<br>(VDS= 10 Vdc, VGS= 0)<br>MMBFJ310, SMMBFJ310|IDSS|12<br>24|−<br>−|30<br>60|mAdc| |Gate−Source Forward Voltage<br>(IG= 1.0 mAdc, VDS= 0)|VGS(f)|−|−|1.0|Vdc| |**SMALL−SIGNAL CHARACTERISTICS**|||||| |Forward Transfer Admittance<br>(VDS= 10 Vdc, ID= 10 mAdc, f = 1.0 kHz)||Yfs||8.0|−|18|mmhos| |Output Admittance<br>(VDS= 10 Vdc, ID= 10 mAdc, f = 1.0 kHz)||yos||−|−|250|�mhos| |Input Capacitance<br>(VGS= −10 Vdc, VDS= 0 Vdc, f = 1.0 MHz)|Ciss|−|−|5.0|pF| |Reverse Transfer Capacitance<br>(VGS= −10 Vdc, VDS= 0 Vdc, f = 1.0 MHz)|Crss|−|−|2.5|pF| |Equivalent Short−Circuit Input Noise Voltage<br>(VDS= 10 Vdc, ID= 10 mAdc, f = 100 Hz)|e<br>n|−|10|−|nV�Hz<br>~~�~~| **http://onsemi.com** **2** ## **MMBFJ309L, MMBFJ310L, SMMBFJ310L** **==> picture [258 x 182] intentionally omitted <==** **----- Start of picture text -----**<br> 70 70<br>60 60<br>VDS = 10 V TA = -�55 ° C<br>50 50<br>I DSS +�25°C<br>40 +�25°C 40<br>30 +150°C 30<br>20 +�25°C 20<br>-�55°C<br>10 +150 ° C 10<br>0<br>-5.0 -4.0 -3.0 -2.0 -1.0 0<br>ID - VGS, GATE-SOURCE VOLTAGE (VOLTS)<br>IDSS - VGS, GATE-SOURCE CUTOFF VOLTAGE (VOLTS)<br>, DRAIN CURRENT (mA)<br>ID<br>, SATURATION DRAIN CURRENT (mA)<br>IDSS<br>**----- End of picture text -----**<br> **Figure 1. Drain Current and Transfer Characteristics versus Gate−Source Voltage** **==> picture [486 x 172] intentionally omitted <==** **----- Start of picture text -----**<br> 100 k 1.0 k 10 120<br>Y fs Y fs RDS 96<br>7.0<br>10 k 100<br>72<br>Cgs<br>4.0 48<br>1.0 k VGS(off) = -�2.3 V = 10<br>Yos VGS(off) = -�5.7 V =<br>Cgd 24<br>1.0<br>100 1.0 0 0<br>0.01 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 50 100 10 9.0 8.0 7.0 6.0 5.0 4.0 3.0 2.0 1.0 0<br>ID, DRAIN CURRENT (mA) VGS, GATE SOURCE VOLTAGE (VOLTS)<br>μ<br>μ<br>CAPACITANCE (pF) , ON RESISTANCE (OHMS)<br>, OUTPUT ADMITTANCE ( mhos)<br>RDS<br>Yos<br>, FORWARD TRANSCONDUCTANCE ( mhos)<br>Yfs<br>**----- End of picture text -----**<br> **Figure 2. Common−Source Output Admittance and Forward Transconductance versus Drain Current** **Figure 3. On Resistance and Junction Capacitance versus Gate−Source Voltage** **http://onsemi.com** **3** **MMBFJ309L, MMBFJ310L, SMMBFJ310L** **==> picture [190 x 170] intentionally omitted <==** **----- Start of picture text -----**<br> 30 3.0<br>24 VDS = 10 V 2.4<br>ID = 10 mA<br>T A = 25°C Y11<br>18 1.8<br>12 Y21 1.2<br>Y22<br>6.0 0.6<br>Y12<br>0<br>100 200 300 500 700 1000<br>f, FREQUENCY (MHz)<br>Y12 (mmhos)<br>|Y11|, |Y21|, |Y22 | (mmhos)<br>**----- End of picture text -----**<br> **Figure 4. Common−Gate Y Parameter Magnitude versus Frequency** **==> picture [217 x 182] intentionally omitted <==** **----- Start of picture text -----**<br> �21, �11 �12, �22<br>180° 50° -�20° 87°<br>� 22 -�20°<br>170° 40° -�40° 86°<br>�21 -�60°<br>160° 30° -�80° 85°<br>-�100°<br>150° 20° -�120° 84°<br>�12<br>-�140°<br>�11<br>140° 10° V DS = 10 V -�160° 83°<br>ID = 10 mA °<br>TA = 25°C -�180<br>130° 0° -�200° 82°<br>100 200 300 500 700 1000<br>f, FREQUENCY (MHz)<br>**----- End of picture text -----**<br> **Figure 6. Common−Gate Y Parameter Phase−Angle versus Frequency** **==> picture [217 x 183] intentionally omitted <==** **----- Start of picture text -----**<br> |S21|, |S11| |S12|, |S22|<br>0.85 0.45 0.060 1.00<br>S22<br>0.79 0.39 0.048 0.98<br>S 21<br>0.73 0.33 V DS = 10 V 0.036 0.96<br>ID = 10 mA<br>TA = 25 ° C<br>0.67 0.27 0.024 0.94<br>S 11<br>0.61 0.21 0.012 0.92<br>S 12<br>0.55 0.15 0.90<br>100 200 300 500 700 1000<br>f, FREQUENCY (MHz)<br>**----- End of picture text -----**<br> **Figure 5. Common−Gate S Parameter Magnitude versus Frequency** **==> picture [209 x 183] intentionally omitted <==** **----- Start of picture text -----**<br> �11, �12 �21, �22<br>-�20° 120° 0<br>�11<br>-�40° 100° �21 � 22 -�20°<br>-�60° 80° -�40°<br>-�80° 60° � 21 -�60°<br>� 12<br>-�100° 40° VDS = 10 V � 11 -�80°<br>ID = 10 mA<br>TA = 25°C<br>-�120° 20° -�100°<br>100 200 300 500 700 1000<br>f, FREQUENCY (MHz)<br>**----- End of picture text -----**<br> **Figure 7. S Parameter Phase−Angle versus Frequency** **http://onsemi.com 4** **MMBFJ309L, MMBFJ310L, SMMBFJ310L** ## **PACKAGE DIMENSIONS** **==> picture [75 x 28] intentionally omitted <==** **----- Start of picture text -----**<br> SOT−23 (TO−236)<br>CASE 318−08<br>ISSUE AP<br>**----- End of picture text -----**<br> - NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. **==> picture [462 x 345] intentionally omitted <==** **----- Start of picture text -----**<br> ||||||||||| |---|---|---|---|---|---|---|---|---|---| |D|2.|CONTROLLING DIMENSION: INCH.| |3.|MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH| |SEE VIEW C|THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM| |3|THICKNESS OF BASE MATERIAL.| |4.|DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH,| |PROTRUSIONS, OR GATE BURRS.| |E|HE|MILLIMETERS|INCHES| |DIM|MIN|NOM|MAX|MIN|NOM|MAX| |A|0.89|1.00|1.11|0.035|0.040|0.044| |c| |A1|0.01|0.06|0.10|0.001|0.002|0.004| |1|2| |b|0.37|0.44|0.50|0.015|0.018|0.020| |b|c|0.09|0.13|0.18|0.003|0.005|0.007| |e|0.25|D|2.80|2.90|3.04|0.110|0.114|0.120| |E|1.20|1.30|1.40|0.047|0.051|0.055| |e|1.78|1.90|2.04|0.070|0.075|0.081| |L|0.10|0.20|0.30|0.004|0.008|0.012| |L1|0.35|0.54|0.69|0.014|0.021|0.029| |A|H|E|2.10|2.40|2.64|0.083|0.094|0.104| |0|°|−−−|10|°|0|°|−−−|10|°| |L| |A1|STYLE 10:| |L1|PIN 1.|DRAIN| |2.|SOURCE| |VIEW C|3.|GATE| |SOLDERING FOOTPRINT*| |0.95| |0.037| |0.95| |0.037| |2.0| |0.079| |0.9| |0.035| |SCALE 10:1|mm| |—|(—|inches|)| |0.8| |0.031|ab| **----- End of picture text -----**<br> *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. **ON Semiconductor** and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. ## **PUBLICATION ORDERING INFORMATION** **LITERATURE FULFILLMENT** : **N. American Technical Support** : 800−282−9855 Toll Free **ON Semiconductor Website** : **www.onsemi.com** Literature Distribution Center for ON Semiconductor USA/Canada P.O. Box 5163, Denver, Colorado 80217 USA **Europe, Middle East and Africa Technical Support: Order Literature** : http://www.onsemi.com/orderlit **Phone** : 303−675−2175 or 800−344−3860 Toll Free USA/Canada Phone: 421 33 790 2910 **Fax** : 303−675−2176 or 800−344−3867 Toll Free USA/Canada **Japan Customer Focus Center** For additional information, please contact your local **Email** : orderlit@onsemi.com Phone: 81−3−5817−1050 Sales Representative ## **LITERATURE FULFILLMENT** : **http://onsemi.com** **MMBFJ309LT1/D** **5**
Updated at April 29, 2026
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