MMBFJ309

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December 2010<br>**----- End of picture text -----**<br>


## **J309 / J310 / MMBFJ309 / MMBFJ310 N-Channel RF Amplifier** 

## **Features** 

- This device is designed for VHF/UHF amplifier, oscillator and mixer applications. 

- As a common gate amplifier, 16 dB at 100 MHz and 12 dB at 450 MHz can be realized. 

- Sourced from Process 92. 

- Source & Drain are interchangeable. 

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J309 MMBFJ309<br>J310 MMBFJ310<br>G<br>S<br>TO-92 SOT-23 Mark MMBFJ309 : 6U<br>GS D D          MMBFJ310 : 6T<br>**----- End of picture text -----**<br>


## **Absolute Maximum Ratings *** Ta = 25°C unless otherwise noted 

|**Absolute Maximum Ratings ***|**Absolute Maximum Ratings ***Ta = 25°C unless otherwise noteda = 25°C unless otherwise noted= 25°C unless otherwise noted°C unless otherwise notedC unless otherwise noted|Ta = 25°C unless otherwise noteda = 25°C unless otherwise noted= 25°C unless otherwise noted°C unless otherwise notedC unless otherwise noted||
|---|---|---|---|
|**Symbol**|**Parameter**|**Value**|**Units**|
|VDS|Drain-Source Voltage|25|V|
|VGS|Gate-Source Voltage|-25|V|
|IGF|Forward Gate Current|10|mA|
|TJ, Tstg|Operating and Storage Junction Temperature Range|- 55 to +150|°C|



- These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. 

## **NOTES:** 

- 1) These ratings are based on a maximum junction temperature of 150 degrees C. 

- 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. 

**Thermal Characteristics** Ta = 25°C unless otherwise noted 

|**Thermal Characteristics**|**Thermal Characteristics**Ta = 25°C unless otherwise noteda = 25°C unless otherwise noted= 25°C unless otherwise noted°C unless otherwise notedC unless otherwise noted||||
|---|---|---|---|---|
|**Symbol**|**Parameter**|**Max.**||**Units**|
|||**J309-J310 **|***MMBFJ309-310**||
|PD|Total Device Dissipation<br>Derate above 25°C|625<br>5.0|350<br>2.8|mW<br>mW/°C|
|RθJC|Thermal Resistance, Junction to Case|127||°C/W|
|RθJA|Thermal Resistance, Junction to Ambient|357|556|°C/W|



© 2010 Fairchild Semiconductor Corporation J309 / J310 / MMBFJ309 / MMBFJ310 Rev. A1 

www.fairchildsemi.com 

1 

## **Electrical Characteristics** Ta = 25°C unless otherwise noted 

|**Electrica**|**l Characteristics**Ta= 25°|C unless otherwise noted|||||
|---|---|---|---|---|---|---|
|**Symbol**|**Parameter**|**Test Condition**|**Min.**|**Typ.**|**Max.**|**Units**|
|**Off Characteristics**|||||||
|BV(BR)GSS|Gate-Source Breakdown Voltage|IG= -1.0μA, VDS= 0|-25|||V|
|IGSS|Gate Reverse Current|VGS= -15V, VDS= 0<br>VGS= -15V, VDS= 0, Ta= 125°C|||-1.0<br>-1.0|nA<br>μA|
|VGS(off)|Gate-Source Cutoff Voltage|VDS= 10V, ID= 1.0nA**309**<br> **310**|-1.0<br>-2.0||-4.0<br>-6.5|V<br>V|
|**On Characteristics**|||||||
|IDSS|Zero-Gate Voltage Drain<br>Current*|VDS= 10V, VGS= 0**309**<br> **310**|12<br>24||30<br>60|mA<br>mA|
|VGS(f)|Gate-Source Forward Voltage|VDS= 0, IG= 1.0mA|||1.0|V|
|**Small Signal Characteristics**|||||||
|Re(yis)|Common-Source Input<br>Conductance|VDS= 10V, ID= 10mA, f = 100MHz<br> **309**<br> **310**||0.7<br>0.5||mmhos<br>mmhos|
|Re(yos)|Common-Source Output<br>Conductance|VDS= 10V, ID= 10mA, f = 100MHz||0.25||mmhos|
|Gpg|Common-Gate Power Gain|VDS= 10V, ID= 10mA, f = 100MHz||16||dB|
|Re(yfs)|Common-Source Forward<br>Transconductance|VDS= 10V, ID= 10mA, f = 100MHz||12||mmhos|
|Re(yig)|Common-Gate Input<br>Conductance|VDS= 10V, ID= 10mA, f = 100MHz||12||mmhos|
|gfs|Common-Source Forward<br>Transconductance|VDS= 10V, ID= 10mA, f = 1.0kHz<br> **309**<br> **310**|10,000<br>8,000||20,000<br>18,000|μmhos<br>μmhos|
|goss|Common-Source Output<br>Conductance|VDS= 10V, ID= 10mA, f = 1.0kHz|||150|μmhos|
|gfg|Common-Gate Forward<br>Conductance|VDS= 10V, ID= 10mA, f = 1.0kHz<br> **309**<br> **310**||13,000<br>12,000||μmhos<br>μmhos|
|gog|Common-Gate Output<br>Conductance|VDS= 10V, ID= 10mA, f = 1.0kHz<br> **309**<br> **310**||100<br>150||μmhos<br>μmhos|
|Cdg|Drain-Gate Capacitance|VDS= 0, VGS= -10V, f = 1.0MHz||2.0|2.5|pF|
|Csg|Source-Gate Capacitance|VDS= 0, VGS= -10V, f = 1.0MHz||4.1|5.0|pF|
|NF|Noise Figure|VDS= 10V, ID= 10mA, f = 450MHz||3.0||dB|
|en|Equivalent Short-Circuit Input<br>Noise Voltage|VDS= 10V, ID= 10mA, f = 100Hz||6.0||nV/ Hz|



* Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2.0% 

© 2010 Fairchild Semiconductor Corporation J309 / J310 / MMBFJ309 / MMBFJ310 Rev. A1 

www.fairchildsemi.com 

2 

## **Typical Performance Characteristics** 

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Transfer Characteristics<br>yesore<br>| TOTarp= 28°C |<br>as 7 fa = 126°C<br><7 \ Vestorr)= -2.2V<br>WN<br>LESXESSSS<br>| AAT<br>4 -<br>Vas — GATE-SOURCE VOLTAGE (V)<br>Transfer Characteristics<br>**----- End of picture text -----**<br>


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Transfer Characteristics<br>ear<br>|| Vasiorr) = -3.8V<br>(tTTa == —55°C 25°C —<br>— rTa 7 126°C<br>\<br>Vesiorr)= —2.2V<br> ST case<br> ST<br>~OSN<br>-1 IN2 -3 TT4 -5<br>Ves — GATE-SQURCE VOLTAGE (Vv)<br>Transfer Characteristics<br>**----- End of picture text -----**<br>


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Input Admittance A 100, pe Forward Transadmittance<br>**----- End of picture text -----**<br>


© 2010 Fairchild Semiconductor Corporation J309 / J310 / MMBFJ309 / MMBFJ310 Rev. A1 

www.fairchildsemi.com 

3 

**Typical Performance Characteristics** (continued) 

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Output Conductance vs.<br>Common Drain-Source Drain Current<br>Ta=26°. ,2 1000 T, =+256°C oe eee<br>_ Vestorr) = Lt—2.7V 3PF ene Hrt e e<br>Pt | f= Pe 6.0V oh<br>COO Settle<br>ee Segw LLUTIMUII galLY<br>lll aaa 5 HE Vee | Vee<br>_“tay a a eeeee. at<br>: ae cae<br>ae = Fiza STAM<br>[eee] - 10 AV<br>0| [r] [—————] aseae1.0 2.0 3.0 40 5.0 be0.1 1.0 TTT<br>Vos — DRAIN-SOURCE VOLTAGE (V) 1p — DRAIN CURRENT (mA)<br>Output Admittance Capacitance vs. Voltage<br>PF LS SS<br>Ve = 10V eH ee<br>tp = 10 mA} +ot _ NE<br>(C6) | et 5 KSI ce (vee = 10v) |_|<br>poe uos , NOS ena|<br>71 La 2BEDLS PT<br>NemeeT<br>===: < IN<br>S TA<br>ert , _|<br>a é ew Sealy)<br>Se a J<br>fT» TT<br> Se eee a 1<br>100 500 1000 qo 2 4 6 B10<br>f — FREQUENCY (MHz) Vos — GATE-SOURCE VOLTAGE (V}<br>Noise Voltage vs. Frequency Reverse Transadmittance<br>**----- End of picture text -----**<br>


© 2010 Fairchild Semiconductor Corporation J309 / J310 / MMBFJ309 / MMBFJ310 Rev. A1 

www.fairchildsemi.com 

4 

## **Typical Performance Characteristics** (continued) 

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Transconductance vs.<br>Parameter Interactions Drain Current<br>**----- End of picture text -----**<br>


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Leakage Current vs. Voltage<br>**----- End of picture text -----**<br>


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Power Dissipation vs<br>Ambient Temperature<br>700 a<br>600 |es| TNAI [| | | [ Jf |<br>500 Py IN TO-92 PE ft fy<br>YF [ [ [| NK [ [| [|ty[ [ |]<br>400 SOT-23<br>ro CELETf | [|~TNT] NYETT T J 7<br>300 p | | | “wy fT ING T Th<br>200 Pf f [ ft | J Aw NIT I<br>100 rpP [|| |[ [|| J[ || {[tf |fT fTBALKTAKNTT<br>0 L[ [| | [| | 7 | | 7 | SS)<br>0 25 50 75 100 125 150<br>TEMPERATURE  (  C)o<br>D<br>P   - POWER DISSIPATION (mW)<br>**----- End of picture text -----**<br>


© 2010 Fairchild Semiconductor Corporation J309 / J310 / MMBFJ309 / MMBFJ310 Rev. A1 

www.fairchildsemi.com 

5 

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## **PRODUCT STATUS DEFINITIONS** 

## **Definition of Terms** 

|**Definition of Terms**|||
|---|---|---|
|**Datasheet Identification**|**Product Status**|**Definition**|
|Advance Information|Formative / In Design|Datasheet contains the design specifications for product development. Specifications may change in<br>anymanner without notice.|
|Preliminary|First Production|Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild<br>Semiconductor reserves the right to make changes at anytime without notice to improve design.|
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|Obsolete|Not In Production|Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor.<br>The datasheet is for reference information only.|



Rev. I50 

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