MMBFJ270

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## **MMBFJ270 P-Channel Switch** 

## **Features** 

- This device is designed for low level analog switching sample and hold circuits and chopper stabilized amplifiers. 

- Sourced from process 88. 

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August 2008<br>G<br>S<br>D<br>SOT-23<br>          Mark : 61S<br>**----- End of picture text -----**<br>


|**Symbol**|**Parameter**|**Value**|**Units**|
|---|---|---|---|
|VDG|Drain-Gate Voltage|-30|V|
|VGS|Gate-Source Voltage|30|V|
|IGF|Forward Gate Current|50|mA|
|TJ, TSTG|Operating and Storage Junction Temperature Range|-55 ~ 150|°C|



- Note1 : These ratings are limiting values above which the serviceability of any semiconductor device may by impaired. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations 

## **Thermal Characteristics** 

|**Symbol**|**Parameter**|**Value**|**Units**|
|---|---|---|---|
|PD|Total Device Dissipation<br>Derate above 25°C|225<br>1.8|mW<br>mW/°C|
|RθJA|Thermal Resistance, Junction to Ambient(Note2)|556|°C/W|



Note2 : Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch 

## **Electrical Characteristics** TC = 25°C unless otherwise noted 

||**Symbol**|**Parameter**|**Test Condition**|**MIN**|**MAX**|**Units**|
|---|---|---|---|---|---|---|
|**Off Characteristics** (Note3)|||||||
||V(BR)GSS|Gate-Source Breakdwon Voltage|IG= 1.0µA, VDS= 0|30||V|
||IGSS|Gate Reverse Current|VGS= 20V, VDS= 0||200|pA|
||VGS(off)|Gate-Source Cutoff Voltage|VDS= -15V,  ID= -1.0nA|0.5|2.0|V|
|**On Characteristics** (Note3)|||||||
||IDSS|Zero-Gate Voltage Drain Current *|VDS= -15V, VGS= 0|-2.0|-15|mA|
||gfs|Forward Transferconductance|VGS= 0V, VDS= 15V, f = 1.0kHz|6000|15000|µmhos|
||goss|Common- Source Output Conduc-|VGS= 0V, VDS= 15V, f = 1.0kHz||200|µmhos|
|||tance|||||



Note3 : Short duration test pulse used to minimize self-heating effect. 

© 2008 Fairchild Semiconductor Corporation MMBFJ270 Rev. B 

www.fairchildsemi.com 

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## **Typical Characteristics** 

## **Common Drain-Source** 

## **Parameter Interactions** 

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-20 100 1,000<br>T   = 25°CA<br>TYP   V            = 4.5 VGS(off) 50 500<br>-16 0.5 V I DSS<br>-12 V      = 0 VGS 1.0 V r DS g fs<br>10 100<br>1.5 V<br>-8<br>5 50<br>2.0 V<br>I        , g     @ V     = 15V,DSS fs DS<br>-4 2.5 V 3.0 V 3.5 V V     = 0 PULSEDr     @ -100 mV, V     = 0DSGS GS<br>V           @ V      = - 15V,GS(off) DS<br>I     = - 1.0 D A<br>0 1 10<br>0 -1 -2 -3 -4 -5 1 2 5 10<br>V    - DRAIN-SOURCE VOLTAGE (V)DS V             - GATE CUTOFF VOLTAGE (V)GS (OFF)<br>Transfer Characteristics Transfer Characteristics<br>-32 16<br>V      = - 15 VDS V      = - 15 VDS<br>V            = - 4.5 VGS(off) V            = - 4.5 VGS(off)<br>- 55°C<br>-24 - 55°C 12<br>25°C<br>25°C<br>125°C<br>125°C<br>-16 V            = 2.5 VGS(off) 8 V            = 2.5 VGS(off)- 55°C<br>- 55°C<br>25°C<br>25°C<br>125°C<br>125°C<br>-8 4<br>0 0<br>0 1 2 3 4 0 1 2 3 4<br>V    - GATE-SOURCE VOLTAGE (V)GS V    - GATE-SOURCE VOLTAGE (V)GS<br>DS<br>D<br>I     - DRAIN CURRENT (mA)<br>fs (r      - DRAIN "ON" RESISTANCE<br>g     - TRANSCONDUCTANCE (mmhos) ) Ω<br>D D<br>I     - DRAIN CURRENT (mA) I     - DRAIN CURRENT (mA)<br>**----- End of picture text -----**<br>


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Normalized Drain Resistance Output Conductance<br>vs Bias Voltage vs Drain Current<br>100 1000<br>50 V             @ 5.0V, 10 GS(off) A f = 1.0 kHz<br>-5.0V -5.0V<br>20 r     = DS 1  -   ________Vr GSDS 100 -10V -20V -10V<br>10 V GS(off) V             = - 4.5VGS(off) -20V<br>5 10<br>V             = - 2.5VGS(off)<br>2<br>1 1<br>0 0.2 0.4 0.6 0.8 1 _ 0.01 _ 0.1 _ 1 _ 10<br>V    /V         - NORMALIZED GATE-SOURCE VOLTAGE (V)GS GS(off) I    - DRAIN CURRENT (mA)D<br>(  Ω )<br>DS<br>r      - NORMALIZED RESISTANCE<br>os<br>g      - OUTPUT CONDUCTANCE (   mhos)<br>**----- End of picture text -----**<br>


© 2008 Fairchild Semiconductor Corporation MMBFJ270 Rev. B 

www.fairchildsemi.com 

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## **Typical Characteristics** (Continued) 

## **Transconductance vs Drain Current** 

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10<br>V             = 2.5VGS(off)<br>5 25°C<br>V             = 6.0VGS(off)<br>- 55°C<br>1 25°C<br>125°C<br>0.5<br>V      = -15VDG<br>f = 1.0 kHz<br>0.1<br>_ 0.1 _ 1 _ 10 _ 100<br>I    - DRAIN CURRENT (mA)D<br>Noise Voltage vs Frequency<br>100<br>50<br>I     = - 0.2 mAD<br>10 I     = 5.0 mAD<br>5<br>V      = - 15VDG<br>BW = 6.0 Hz @ f = 10 Hz, 100 Hz<br>       = 0.2f @ f  ≥  1.0 kHz<br>1<br>0.01 0.1 1 10 100<br>f - FREQUENCY (kHz)<br>fs<br>g     - TRANSCONDUCTANCE (mmhos)<br>√<br>n<br>e    - NOISE VOLTAGE (nV /   Hz)<br>**----- End of picture text -----**<br>


## **Capacitance vs Voltage** 

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100<br>f  = 0.1 - 1.0 MHz<br>10 C      (V      = -15V)is DS<br>5 C      (V      = -15V)rs DS<br>1<br>0 4 8 12 16 20<br>V      - GATE-SOURCE VOLTAGE (V)GS<br>rs<br>is<br>C     (C      ) - CAPACITANCE (pF)<br>**----- End of picture text -----**<br>


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Channel Resistance<br>vs Temperature<br>1000<br>V      = -100 mVDS<br>500 V             = 2.5V<br>GS(off) V      = 0GS<br>V             = 4.5VGS(off)<br>V             = 8.0VGS(off)<br>100<br>50<br>10<br>-50 0 50 100 150<br>T     - AMBIENT TEMPERATURE (  C)A o<br>)( Ω<br>DS<br>r     - DRAIN "ON" RESISTANCE<br>**----- End of picture text -----**<br>


## **Power Derating** 

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300<br>250<br>200<br>150<br>100<br>50<br>0<br>0 25 50 75 100 125 150 175<br>Tc[oC], CASE TEMPERATURE<br>[W], POWER DISSIPATIONPC<br>**----- End of picture text -----**<br>


© 2008 Fairchild Semiconductor Corporation MMBFJ270 Rev. B 

www.fairchildsemi.com 

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## **Package Dimensions** 

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SOT-23<br>0.40  ± 0.03<br>0.03~0.10<br>0.38 REF<br>0.40  ± 0.03 +0.05<br>0.12 –0.023<br>0.96~1.14<br>2.90  ± 0.10<br>0.95  ± 0.03 0.95  ± 0.03<br>1.90  ± 0.03 0.508REF<br>0.20 MIN<br>0.45~0.60<br>1.30 0.10 ± 2.40 0.10 ±<br>0.97REF<br>**----- End of picture text -----**<br>


Dimensions in Millimeters 

© 2008 Fairchild Semiconductor Corporation MMBFJ270 Rev. B 

www.fairchildsemi.com 

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© 2008 Fairchild Semiconductor Corporation MMBFJ270 Rev. B 

www.fairchildsemi.com 

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ON Semiconductor and      are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. 

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