MMBFJ176

## **ON Semiconductor** 

## **Is Now** 

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**onsemi** and       and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “ **onsemi** ” or its affiliates and/or subsidiaries in the United States and/or other countries. **onsemi** owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of **onsemi** product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. **onsemi** reserves the right to make changes at any time to any products or information herein, without notice. The information herein is provided “as-is” and **onsemi** makes no warranty, representation or guarantee regarding the accuracy of the information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does **onsemi** assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using **onsemi** products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by **onsemi** . “Typical” parameters which may be provided in **onsemi** data sheets and/ or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. **onsemi** does not convey any license under any of its intellectual property rights nor the rights of others. **onsemi** products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use **onsemi** products for any such unintended or unauthorized application, Buyer shall indemnify and hold **onsemi** and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that **onsemi** was negligent regarding the design or manufacture of the part. **onsemi** is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. Other names and brands may be claimed as the property of others. 

## **J175 / J176 / MMBFJ175 / MMBFJ176 / MMBFJ177 P-Channel Switch** 

## **Description** 

This device is designed for low-level analog switching sample-and-hold circuits and chopper-stabilized amplifiers. Sourced from process 88. 

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TO-92<br>1. Drain<br>2. Gate<br>1 2 3 1 2 3. Source<br>3<br>Straight Lead      Bent Lead<br>Bulk Packing     Tape & Reel<br>    Ammo Packing<br>**----- End of picture text -----**<br>


**Figure 1. J175 / J176 Device Package** 

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G<br>S<br>SOT-23 D<br>Mark: 6W / 6X / 6Y<br>Note: Source & drain are interchangeable.<br>**----- End of picture text -----**<br>


**Figure 2. MMBFJ175 / 176 / 177 Device Package** 

## **Ordering Information** 

|**Part Number**|**Marking**|**Package**|**Packing Method**|
|---|---|---|---|
|J175-D26Z|J175|TO-92 3L|Tape and Reel|
|J176-D74Z|J176|TO-92 3L|Ammo|
|MMBFJ175|6W|SOT-23 3L|Tape and Reel|
|MMBFJ176|6X|SOT-23 3L|Tape and Reel|
|MMBFJ177|6Y|SOT-23 3L|Tape and Reel|



Publication Order Number: J175/D 

©1997 Semiconductor Components Industries, LLC. October-2017, Rev. 2 

## **Absolute Maximum Ratings**[(1),(2)] 

Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only. Values are at TA = 25°C unless otherwise noted. 

|**Symbol**|**Parameter**|**Value**|**Unit**|
|---|---|---|---|
|VDG|Drain-Gate Voltage|-30|V|
|VGS|Gate-Source Voltage|30|V|
|IGF|Forward Gate Current|50|mA|
|TJ, TSTG|Operating and Storage Junction Temperature Range|-55 to + 150|°C|



## **Notes:** 

1. These ratings are based on a maximum junction temperature of 150 ° C. 

2. These are steady-state limits. ON Semiconductor should be consulted on applications involving pulsed or lowduty cycle operations. 

## **Thermal Characteristics** 

Values are at TA = 25°C unless otherwise noted. 

|Values are at|TA= 25°C unless otherwise noted.||||
|---|---|---|---|---|
|**Symbol**|**Parameter**|**Max.**||**Unit**|
|||**J175 / J176**(3)|**MMBFJ175 /**<br>**MMBFJ176 /**<br>**MMBFJ177**(3)||
|PD|Total Device Dissipation|350|225|mW|
||Derate Above 25°C|2.8|1.8|mW/°C|
|RθJC|Thermal Resistance, Junction to Case|125||°C/W|
|RθJA|Thermal Resistance, Junction to Ambient|357|556|°C/W|



## **Note:** 

3. PCB size: FR-4, 76 mm x 114 mm x 1.57 mm (3.0 inch x 4.5 inch x 0.062 inch) with minimum land pattern size. 

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## **Electrical Characteristics** 

Values are at TA = 25°C unless otherwise noted. 

|Values are at|TA= 25°C unless otherwise noted.||||||
|---|---|---|---|---|---|---|
|**Symbol**|**Parameter**|**Conditions**||**Min.**|**Max.**|**Unit**|
|**Off Characteristics**|||||||
|V|Gate-Source Breakdown Voltae|I= 10A V= 0||30||V|
|(BR)GSS|g|G.μ,DS|||||
|IGSS|Gate Reverse Current|VGS= 20 V, VDS= 0|||1.0|nA|
|VGS(off)|Gate-Source Cut-Off Voltage|VDS= -15 V, ID= -10 nA|**J175 /**<br>**MMBFJ175**|3.0|6.0|V|
||||**J176 /**<br>**MMBFJ176**|1.0|4.0||
||||**MMBFJ177**|0.8|2.5||
|**On Characteristics**|||||||
|IDSS|Zero-Gate Voltage Drain Current(4)|VDS= -15 V, IGS= 0|**J175 /**<br>**MMBFJ175**|-7.0|-60.0|mA|
||||**J176 /**<br>**MMBFJ176**|-2.0|-25.0||
||||**MMBFJ177**|-1.5|-20.0||
|rDS(on)|Drain-Source On Resistance|VDS ≤ 0.1 V, VGS= 0|**J175 /**<br>**MMBFJ175**||125|Ω|
||||**J176 /**<br>**MMBFJ176**||250||
||||**MMBFJ177**||300||



## **Note:** 

4. Pulse test: pulse width ≤ 300 μ s, duty cycle ≤ 2.0%. 

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## **Typical Performance Characteristics** 

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-20 100 1,000<br>T    A = 25°C<br>TYP   V            = 4.5 VGS(off) 50 500<br>-16 0.5 V I DSS<br>-12 V      = 0 VGS 1.0 V r DS g fs<br>10 100<br>1.5 V<br>-8<br>5 50<br>2.0 V<br>I        DSS , g fs @ V     = 15VDS ,<br>-4 2.5 V 3.0 V 3.5 V V     = 0 PULSED r     @ -100 mV, V     = 0DS GS GS<br>V           @ V      = - 15V,GS(off) DS<br>I     = - 1.0 D μ A<br>0 1 10<br>0 -1 -2 -3 -4 -5 1 2 5 10<br>V    - DRAIN-SOURCE VOLTAGE (V)DS V            - GATE CUTOFF VOLTAGE (V)GS (OFF)<br>DS<br>D<br>I     - DRAIN CURRENT (mA)<br>fs (r      - DRAIN "ON" RESISTANCE<br>g     - TRANSCONDUCTANCE (mmhos) ) Ω<br>**----- End of picture text -----**<br>


**Figure 3. Common Drain-Source** 

**Figure 4. Parameter Interactions** 

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-32 16<br>V      = - 15 VDS V      = - 15 VDS<br>V            = - 4.5 VGS(off) V            = - 4.5 V GS(off)- 55°C<br>-24 - 55°C 12<br>25°C<br>25°C 125°C<br>-16 125°C V            = 2.5 VGS(off) 8 V            = 2.5 VGS(off) - 55°C<br>- 55°C<br>25 ° C 25°C<br>125°C<br>125°C<br>-8 4<br>0 0<br>0 1 2 3 4 0 1 2 3 4<br>V    - GATE-SOURCE VOLTAGE (V)GS V    - GATE-SOURCE VOLTAGE (V)GS<br>Figure 5. Transfer Characteristics Figure 6. Transfer Characteristics<br>100 1000<br>V             @ 5.0V, 10 GS(off) μ A f = 1.0 kHz<br>50<br>-5.0V -5.0V<br>20 r     = DS 1  -   ________V r GSDS 100 -10V -20V -10V<br>10 V GS(off) V             = - 4.5VGS(off) -20V<br>5 10<br>V             GS(off) = - 2.5V<br>2<br>1 1<br>0 0.2 0.4 0.6 0.8 1 _ 0.01 _ 0.1 _ 1 _ 10<br>V    /V         - NORMALIZED GATE-SOURCE VOLTAGE (V)GS GS(off) I    - DRAIN CURRENT (mA)D<br>D D<br>I     - DRAIN CURRENT (mA) I     - DRAIN CURRENT (mA)<br>)<br>(  Ω<br>μ<br>DS<br>r      - NORMALIZED RESISTANCE<br>os<br>g      - OUTPUT CONDUCTANCE (   mhos)<br>**----- End of picture text -----**<br>


**Figure 7. Normalized Drain Resistance vs. Bias Voltage** 

**Figure 8. Output Conductance vs. Drain Current** 

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## **Typical Performance Characteristics** (Continued) 

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100<br>10 f  = 0.1 - 1.0 MHz<br>V             = 2.5V GS(off)<br>5 25°C<br>V             = 6.0V GS(off)<br>- 55°C<br>1 25°C 10 C      is (V      = -15VDS )<br>125°C<br>0.5 5 C      (V       rs DS = -15V)<br>V      = -15VDG<br>f = 1.0 kHz<br>0.1<br>_ 0.1 _ 1 _ 10 _ 100 1<br>0 4 8 12 16 20<br>I    - DRAIN CURRENT (mA)D<br>V      - GATE-SOURCE VOLTAGE (V)GS<br>Figure 9. Transconductance vs. Drain Current Figure 10. Capacitance vs. Voltage<br>100<br>1000<br>50 V      = -100 mVDS<br>I     = - 0.2 mAD 500 V             = 2.5V GS(off) V      = 0GS<br>V             = 4.5V GS(off)<br>V             = 8.0V GS(off)<br>10 I     = 5.0 mAD 100<br>5 50<br>V       DG = - 15V<br>BW = 6.0 Hz @ f = 10 Hz, 100 Hz<br>   = 0.2f @ f  ≥  1.0 kHz<br>1 10<br>0.01 0.1 1 10 100 -50 0 50 100 150<br>f - FREQUENCY (kHz) T     - AMBIENT TEMPERATURE (  C)A o<br>rs<br>is<br>C     (C      ) - CAPACITANCE (pF)<br>fs<br>g     - TRANSCONDUCTANCE (mmhos)<br>)( Ω<br>√<br>e    - NOISE VOLTAGE (nV /   Hz)n DS<br>r     - DRAIN "ON" RESISTANCE<br>**----- End of picture text -----**<br>


**Figure 11. Noise Voltage vs. Frequency** 

**Figure 12. Channel Resistance vs. Temperature** 

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350<br>300<br>TO-92<br>250<br>200<br>150<br>SOT-23<br>100<br>50<br>0<br>0 25 50 75 100 125 150<br>TEMPERATURE  (  C)o<br>D<br>P   - POWER DISSIPATION (mW)<br>**----- End of picture text -----**<br>


**Figure 13. Power Dissipation vs. Ambient Temperature** 

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## **Physical Dimensions** 

**Figure 14. 3-Lead, TO-92, Molded, 0.2 In Line Spacing Lead Form** 

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## **Physical Dimensions** (Continued) 

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0.95<br>2.92±0.20<br>3<br>1.40<br>1.30 [+0.20] 2.20<br>-0.15<br>1 2<br>(0.29) 0.60<br>0.37<br>0.95<br>0.20 A B 1.00<br>1.90 1.90<br>LAND PATTERN<br>RECOMMENDATION<br>1.20 MAX SEE DETAIL A<br>(0.93) 0.10<br>0.00<br>0.10 C<br>C<br>2.40±0.30<br>NOTES: UNLESS OTHERWISE SPECIFIED<br>GAGE PLANE<br>A) REFERENCE JEDEC REGISTRATION<br>TO-236, VARIATION AB, ISSUE H.<br>0.23 B) ALL DIMENSIONS ARE IN MILLIMETERS.<br>0.08 C) DIMENSIONS ARE INCLUSIVE OF BURRS,<br>0.25   MOLD FLASH AND TIE BAR EXTRUSIONS.<br>D) DIMENSIONING AND TOLERANCING PER<br>ASME Y14.5M - 1994.<br>0.20 MIN SEATING    E) DRAWING FILE NAME: MA03DREV10<br>(0.55) PLANE<br>SCALE: 2X<br>**----- End of picture text -----**<br>


**Figure 15. 3-LEAD, SOT23, JEDEC TO-236, LOW PROFILE** 

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ON Semiconductor and      are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. 

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