MMBFJ175LT1G
JFET Transistor, 30 V, 60 mA, 6 V, SOT-23, 3 Pin, 150 °C
- Manufacturer: ONSEMI
- Product type: JFETs
- Breakdown Voltage Vbr:30V; Zero Gate Voltage Drain Current Idss Min:7mA; Zero Gate Voltage Drain Current Idss Max:60mA; Gate-Source Cutoff Voltage Vgs(off) Max:6V; Transistor Case Style:SOT-23;
- MSL: MSL 1 - Unlimited
- SVHC: No SVHC (25-Jun-2025)
- No. of Pins: 3 Pin
- Channel Type: P Channel
- Product Range: -
- Qualification: AEC-Q101
- Transistor Type: JFET
- Transistor Mounting: Surface Mount
- Transistor Case Style: SOT-23
- Operating Temperature Max: 150°C
- Gate Source Cutoff Voltage Max: 6V
- Gate Source Breakdown Voltage Max: 30V
- Zero Gate Voltage Drain Current Max: 60mA
- Zero Gate Voltage Drain Current Idss Min: 7mA
| Delivery and price | |
|---|---|
| Units per pack | 9000 |
| Price | 0.104 € |
| Current stock | 1000+ |
| Lead time | 30 days |
MMBFJ175LT1G ## JFET Chopper ## **P−Channel − Depletion** ## **Features** - S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable - These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant ## **MAXIMUM RATINGS** |**MAXIMUM RATINGS**|||| |---|---|---|---| |**Rating**|**Symbol**|**Value**|**Unit**| |Drain−Gate Voltage|VDG|25|V| |Reverse Gate−Source Voltage|VGS(r)|−25|V| |**THERMAL CHARACTERISTICS**|||| |**Characteristic**<br>**Symbol**<br>**Max**<br>**Unit**<br>Total Device Dissipation FR−5 Board,<br>(Note 1) TA= 25°C<br>Derate above 25°C<br>PD<br>225<br>1.8<br>mW<br>mW/°C<br>~~a~~<br>~~ii~~|||| |Thermal Resistance, Junction−to−Ambient<br>R JA<br>556<br>°C/W<br>Junction and Storage Temperature<br>TJ, Tstg<br>−55 to +150<br>°C<br>~~ee~~|||| Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. FR−5 = 1.0 x 0.75 x 0.062 in. **ELECTRICAL CHARACTERISTICS** (TA = 25 ° C unless otherwise noted) **Characteristic Symbol Min Max Unit** ~~Rs~~ **OFF CHARACTERISTICS** Gate−Source Breakdown Voltage V(BR)GSS 30 − V (VDS = 0, ID = 1.0 A) ~~er~~ Gate Reverse Current IGSS − 1.0 nA (VDS = 0 V, VGS = 20 V) ~~ee~~ Gate−Source Cutoff Voltage VGS(OFF) 3.0 6.0 V (VDS = 15, ID = 10 nA) ~~ee~~ **ON CHARACTERISTICS** Zero Gate−Voltage Drain Current (Note 2) IDSS 7.0 60 mA (VGS = 0, VDS = 15 V) ~~ee~~ Drain Cutoff Current ID(off) − 1.0 nA (VDS = 15 V, VGS = 10 V) ~~ee~~ Drain Source On Resistance rDS(on) − 125 (ID = 500 A) ~~=~~ Input Capacitance VDS = 0, VGS = 10V Ciss − 11 Reverse Transfer f = 1.0 MHz Crss − 5.5 pF Capacitance ~~]~~ Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 2. Pulse Test: Pulse Width 300 s, Duty Cycle 2.0%. Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. ## **http://onsemi.com** **==> picture [94 x 78] intentionally omitted <==** **----- Start of picture text -----**<br> 2 SOURCE<br>3<br>GATE<br>1 DRAIN<br>**----- End of picture text -----**<br> **==> picture [147 x 50] intentionally omitted <==** **----- Start of picture text -----**<br> 3<br>SOT−23 (TO−236)<br>1 & CASE 318<br>STYLE 10<br>lS 2<br>**----- End of picture text -----**<br> ## **MARKING DIAGRAM** **==> picture [164 x 123] intentionally omitted <==** **----- Start of picture text -----**<br> 6W M<br>1<br>a<br>6W = Device Code<br>M = Date Code*<br>= Pb−Free Package<br>(Note: Microdot may be in either location)<br>*Date Code orientation and/or overbar may<br>vary depending upon manufacturing location.<br>**----- End of picture text -----**<br> ## **ORDERING INFORMATION** |**Device**|**Package**|**Shipping**†| |---|---|---| |MMBFJ175LT1G|SOT−23<br>(Pb−Free)|3000 / Tape &<br>Reel| |SMMBFJ175LT1G|SOT−23<br>(Pb−Free)|3000 / Tape &<br>Reel| - †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Publication Order Number: **MMBFJ175LT1/D** **1** © Semiconductor Components Industries, LLC, 2014 **March, 2014 − Rev. 6** **MMBFJ175LT1G** ## **PACKAGE DIMENSIONS** **SOT−23 (TO−236AB)** CASE 318−08 ISSUE AP NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. ||||||||||||||**D**|**D**|||||||||||||||||||||||2.|CONTROLLING DIMENSION: INCH.|CONTROLLING DIMENSION: INCH.||| |---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---| |||||||||||||**3**|||||||||**SEE VIEW C**||**SEE VIEW C**||**SEE VIEW C**||||||||||||3. <br>4.|MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH<br>THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM<br>THICKNESS OF BASE MATERIAL.<br> DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH,|||| ||**E**|||||||||||||||||||**H**|**E**|||||||||||||||||PROTRUSIONS, OR GATE BURRS.<br>**DIM**<br>**MIN**<br>**NOM**<br>**MAX**<br>**MIN**<br>**MILLIMETERS**||**INCHES**<br>**NOM**|**MAX**| |||||||||||**1**|||**e**||**2**||||**b**|||||||||||||||0.25<br>**c**||||**A**<br>0.89<br>1.00<br>1.11<br>**A1**<br>0.01<br>0.06<br>0.10<br>**b**<br>0.37<br>0.44<br>0.50<br>**c**<br>0.09<br>0.13<br>0.18<br>**D**<br>2.80<br>2.90<br>3.04|0.035<br>0.001<br>0.015<br>0.003<br>0.110|0.040<br>0.002<br>0.018<br>0.005<br>0.114|0.044<br>0.004<br>0.020<br>0.007<br>0.120| |||||||||||||||||||||||||||||||||||||||**E**<br>1.20<br>1.30<br>1.40|0.047|0.051|0.055| |||||||||||||||||||||||||||||||||||||||**e**<br>1.78<br>1.90<br>2.04|0.070|0.075|0.081| |||||||||||||||||||||||||||||||||||||||**L**<br>0.10<br>0.20<br>0.30|0.004|0.008|0.012| |**A**||||||||||||||||||||||||||||||||||||||**L1**<br>2.10<br>2.40<br>2.64<br>**HE**<br>0.35<br>0.54<br>0.69|0.083<br>0.014|0.094<br>0.021|0.104<br>0.029| ||**A1**|||||||||||||||||||||||||||**L1**|||**L**|||||||0<br>−−−<br>10<br>°<br>°<br>STYLE 10:<br>PIN 1.<br>DRAIN|0<br>°|−−−|10<br>°| |||||||||||||||||||||||||||||||||||||||2.<br>SOURCE|||| |||||||||||||||||||||||||||||**VIEW C**||||||||||3.<br>GATE|||| ## **SOLDERING FOOTPRINT*** **==> picture [150 x 161] intentionally omitted <==** **----- Start of picture text -----**<br> 0.95<br>0.037<br>0.95<br>0.037<br>2.0<br>0.079<br>0.9<br>0.035<br>— |-<br>0.8<br>0.031 7 ° ~<br>SCALE 10:1 mm<br>(—) inches<br>**----- End of picture text -----**<br> *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. **ON Semiconductor** and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. ## **PUBLICATION ORDERING INFORMATION** **LITERATURE FULFILLMENT** : **N. American Technical Support** : 800−282−9855 Toll Free **ON Semiconductor Website** : **www.onsemi.com** Literature Distribution Center for ON Semiconductor USA/Canada P.O. Box 5163, Denver, Colorado 80217 USA **Europe, Middle East and Africa Technical Support: Order Literature** : http://www.onsemi.com/orderlit **Phone** : 303−675−2175 or 800−344−3860 Toll Free USA/Canada Phone: 421 33 790 2910 **Fax** : 303−675−2176 or 800−344−3867 Toll Free USA/Canada **Japan Customer Focus Center** For additional information, please contact your local **Email** : orderlit@onsemi.com Phone: 81−3−5817−1050 Sales Representative ## **LITERATURE FULFILLMENT** : **http://onsemi.com** **MMBFJ175LT1/D** **2**
Updated at April 29, 2026
onsemi is a premier global supplier of intelligent power and sensing technologies, driving disruptive innovations across the automotive, industrial, and cloud infrastructure markets. Recognized for their commitment to sustainability and reliable supply chains, the company accelerates advancements in vehicle electrification, industrial automation, and 5G networks by solving the industry's most complex design challenges. At the core of their portfolio is an industry-leading selection of discrete semiconductors. This extensive range features thousands of high-performance bipolar transistors, single and dual MOSFETs, and a comprehensive array of diodes, including Zener, Schottky, and fast-recovery rectifiers. Engineered for superior thermal performance and energy efficiency, these foundational components are critical for demanding power conversion, switching, and signal conditioning applications. Beyond essential discretes, onsemi provides a robust suite of advanced power management and circuit protection solutions. Their lineup includes intelligent power modules, single IGBTs, and transient voltage suppression (TVS) diodes designed to safeguard sensitive circuitry. Complimented by integrated passive filters, AC/DC LED driver ICs, and specialized sub-2.4GHz RF transceivers, onsemi equips engineers with the scalable, high-quality technologies needed to build a cleaner, smarter, and more connected world.
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