MMBFJ108

## N-Channel JFET 

## J109, MMBFJ108 

## **Features** 

- This Device is Designed for Digital Switching Applications where Very Low On Resistance is Mandatory 

- Sourced from Process 58 

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• These are Pb−Free Devices 

**MAXIMUM RATINGS** (TA = 25 ° C unless otherwise specified) (Notes 1, 2) **Symbol Parameter Value Unit** VDG Drain−Gate Voltage 25 V VGSGS Gate−Source Voltage −25 V 1 IGFGF Forward Gate Current 10 mA ° **TO−92 3 4.825x4.76** TJ, TSTGJ, TSTG, TSTGSTG Operating and Storage Junction −55 to 150 C Temperature Range **CASE 135AN** ~~————~~ ew Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 

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||||||||||
|---|---|---|---|---|---|---|---|---|
|VGSGS|Gate−Source Voltage|−25|1|
|IGFGF|Forward Gate Current|10|mA|
|°|TO−92 3 4.825x4.76|
|TJ, TSTGJ, TSTG, TSTGSTG|Operating and Storage Junction|−55 to 150|C|
|Temperature Range|CASE 135AN|
|Stresses exceeding those listed in the Maximum Ratings table may damage the|
|device. If any of these limits are exceeded, device functionality should not be|
|assumed, damage may occur and reliability may be affected.|
|1.|These ratings are based on a maximum junction temperature of 150|°|C.|
|2.|These are steady−state limits. ON Semiconductor should be consulted on|
|applications involving pulsed or low−duty−cycle operations.|1|
|°|
|THERMAL CHARACTERISTICS|(TA = 25|C unless otherwise specified)|»|
|Max|TO−92 3 4.83x4.76|
|LEADFORMED|
|J109|MMBFJ108|CASE 135AR|
|Symbol|Parameter|(Note 3)|(Note 4)|Unit|
|PD|Total Device Dissipation|625|350|mW|
|3|
|Derate Above 25|°|C|5.0|2.8|mW/|°|C|
|R|JC|Thermal Resistance,|125|−|°|C/W|1|
|Junction−to−Case|2|
|OD|
|R|JA|Thermal Resistance,|200|357|°|C/W|SOT−23/SUPERSOT3 LEAD, 1.4x2.9|−23,|
|Junction−to−Ambient|
|CASE 527AG|
|3.|PCB size: FR−4, 76 mm x 114 mm x 1.57 mm (3.0 inch x 4.5 inch x 0.062 inch)|
|with minimum land pattern size.|1. Drain, 2. Source, 3. Gate|

**----- End of picture text -----**<br>


1. Drain, 2. Source, 3. Gate 

4. Device mounted on FR−4 PCB 36 mm x 18 mm x 1.5 mm; mounting pad for the collector lead minimum 6 cm[2] . 

## **MARKING DIAGRAM** 

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**----- Start of picture text -----**<br>
||||
|---|---|---|
|$Y&Z&3&K|$Y&Z&3|
|J109|J109|&Y|
|I8 &G|
|—}|Ede|
|J109|J109−D26Z|MMBFJ108|
|J109, I8|= Specific Device Code|
|$Y|= ON Semiconductor Logo|
|&Y|= Year Coding|
|&G|= Weekly Date Code|
|&Z|= Assembly Plant Code|
|&3|= Date Code Format|
|&K|= Lot Run Traceability Code|

**----- End of picture text -----**<br>


## **ORDERING INFORMATION** 

See detailed ordering and shipping information on page 5 of this data sheet. 

Publication Order Number: **J109/D** 

**1** 

© Semiconductor Components Industries, LLC, 2002 **December, 2020 − Rev. 4** 

**J109, MMBFJ108** 

**ELECTRICAL CHARACTERISTICS** (TJ = 25 ° C unless otherwise noted) 

|**ELECTRIC**|**AL CHARACTERISTICS**(TJ= 25°C unless|otherwise noted)|otherwise noted)||||
|---|---|---|---|---|---|---|
|**Symbol**|**Parameter**|**Test Condition**||**Min**|**Max**|**Unit**|
|**OFF CHARACTERISTICS**|||||||
|V(BR)GSS|Gate−Source Breakdown Voltage|IG= −10�A, VDS= 0||−25|−|V|
|IGSS|Gate Reverse Current|VGS= −15 V, VDS= 0||−|−3.0|nA|
|||VGS= −15 V, VDS= 0, TA|= 100°C|−|−200||
|VGS(off)|Gate−Source Cut−Off Voltage|VDS= 15 V, ID= 10 nA|MMBFJ108|−3.0|−10.0|V|
||||J109|−2.0|−6.0||
|**ON CHARACTERISTICS**|||||||
|IDSS|Zero−Gate Voltage Drain Current (Note 5)|VDS= 15 V, VGS= 0|MMBFJ108|80|−|mA|
||||J109|40|−||
|rDS(on)|Drain−Source On Resistance|VDS≤0.1 V, VGS= 0|MMBFJ108|−|8.0|�|
||||J109|−|12||
|**SMALL SIGNAL CHARACTERISTICS**|||||||
|Cdg(on)<br>Csg(off)|Drain−Gate & Source−Gate On Capacitance|VDS= 0, VGS= 0, f = 1.0 MHz||−|85|pF|
|Cdg(off)|Drain−Gate Off Capacitance|VDS= 0, VGS= −10 V, f = 1.0 MHz||−|15|pF|
|Csg(off)|Source−Gate Off Capacitance|VDS= 0, VGS= −10 V, f = 1.0 MHz||−|15|pF|



Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 5. Pulse test: pulse width ≤ 300 � s, duty cycle ≤ 2%. 

## **TYPICAL PERFORMANCE CHARACTERISTICS** 

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300<br>VGS = 10 mV Unit with Typical<br>VGS = 500 mV VGS (off) = −7.8 V<br>VGS = 1.0 V TA  = 25 ° C<br>250 V GS  = 1.5 V<br>VGS = 2.0 V<br>VGS = 2.5 V<br>200 V GS  = 3.0 V<br>VGS = 3.5 V<br>150 VGS = 4.0 V<br>VGS = 4.5 V<br>100 V GS  = 5.0 V<br>VGS = 5.5 V<br>50<br>VGS = 6.5 V<br>VGS = 6.0 V<br>VGS = 7.0 V<br>0<br>0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15<br>VDS, DRAIN SOURCE VOLTAGE (V)<br>, DRAIN CURRENT (mA)<br>ID<br>**----- End of picture text -----**<br>


**Figure 1. Common Drain−Source, MMBFJ108** 

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**2** 

**J109, MMBFJ108** 

## **TYPICAL PERFORMANCE CHARACTERISTICS** (continued) 

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200<br>VGS = −0.01 V<br>180 − 0.5 V<br>−1.0 V<br>160<br>140 −1.5 V<br>120<br>−2.0 V<br>100<br>80<br>−2.5 V<br>60<br>40<br>−3.5 V<br>20 Unit with Typical<br>VGS(off) = −4.8 V<br>T A  = 25 ° C<br>0<br>0 2 4 6 8 10 12 14 16<br>VDS, DRAIN SOURCE VOLTAGE (V)<br>Figure 2. Common Drain−Source,MMBFJ108, J109<br>250<br>Unit with Typical<br>VGS(off) = −2.9 V<br>TA = 25 ° C<br>200<br>V GS  = −0.1 V<br>150<br>−0.5 V<br>100<br>−1.0 V<br>50 −1.5 V<br>−2.0 V<br>0<br>0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15<br>VDS, DRAIN SOURCE VOLTAGE (V)<br>, DRAIN CURRENT (mA)<br>ID<br>, DRAIN CURRENT (mA)<br>ID<br>**----- End of picture text -----**<br>


**Figure 3. Common Drain−Source, J109** 

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**3** 

**J109, MMBFJ108** 

## **TYPICAL PERFORMANCE CHARACTERISTICS** (continued) 

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100<br>VGS = 100 mV<br>ID = 100 mA<br>V GS(off)  @ V DS = 15 V, I D = 10 nA<br>10<br>1<br>−1 −10<br>VGS(off), GATE CUTOFF VOLTAGE (V)<br>Figure 4. Drain ON Resistance<br>100<br>VDG = 10 V<br>50 BW = 6.0 Hz @ f = 10 Hz, 100 Hz<br>= 0.21 @ f  ≥  1.0 kHz<br>10<br>5<br>I D = 1.0 mA<br>I D  = 10 mA<br>1<br>0.01 0.03 0.1 0.5 1 2 10 100<br>f, FREQUENCY (Hz)<br>) �<br>− DRAIN “ON” RESISTANCE (<br>rDS<br>)Hz<br>√<br>− NOISE VOLTAGE (nV /<br>n<br>e<br>**----- End of picture text -----**<br>


**Figure 6. Noise Voltage vs. Frequency** 

**==> picture [234 x 156] intentionally omitted <==**

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50<br>40<br>VGS(off) = −8.5 V<br>VGS(off) = −5.5 V<br>30<br>VGS(off) = −3.5 V<br>20<br>10 TA = 25 ° C<br>VDD = 1.5 V<br>VGS = −12 V<br>0<br>0 5 10 15 20 25<br>ID, DRAIN CURRENT (mA)<br> − TURN−OFF TIME (ns)<br>tOFF<br>**----- End of picture text -----**<br>


**Figure 8. Switching Turn−On Time vs. Drain Current** 

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1000<br>VGS = 0 PULSED<br>VDS = 5 V<br>V GS(off)  @ V DS = 15 V, I D = 10 nA<br>100<br>10<br>−1 −10<br>VGS(off), GATE CUTOFF VOLTAGE (V)<br>Figure 5. Drain Current vs.<br>Gate−Source Cut−Off Voltage<br>10<br>TA = 25 ° C<br>VDD = 1.5 V<br>8 VGS = −12 V<br>6<br>ID = 30 mA<br>4<br>ID = 10 mA<br>2<br>0<br>0 −2 −4 −6 −8 −10<br>VGS(off), GATE CUTOFF VOLTAGE (V)<br>Figure 7. Switching Turn−On Time vs.<br>Gate−Source Cut−Off Voltage<br>100<br>VGS = 0 V<br>TA = 125 ° C<br>VGS(off) = −2.9 V<br>10<br>25 ° C<br>−55 ° C<br>VGS(off) = −4.0 V<br>1<br>1 10 100<br>ID, DRAIN CURRENT (mA)<br>− DRAIN CURRENT (mA)<br>IDSS<br> − TURN−ON TIME (ns)<br>tON ON<br>) �<br>− DRAIN “ON” RESISTANCE (<br>rDS<br>**----- End of picture text -----**<br>


**Figure 9. On Resistance vs. Drain Current** 

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**4** 

**J109, MMBFJ108** 

## **TYPICAL PERFORMANCE CHARACTERISTICS** (continued) 

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1000 TA = 25 ° C 100 TA = 25 ° C<br>f = 1.0 kHz f = 1.0 kHz<br>VGS(off) = −4.0 V VGS = 10 V<br>VGS(off) = −3.0 V @ VDS = 15 V, ID = 10 nA<br>100 10<br>10 1<br>1 0,1<br>0,1 1 10 0,1 1 10<br>ID, DRAIN CURRENT (mA) ID, DRAIN CURRENT (mA)<br>mhos) mhos)<br>� �<br>, TRANSCONDUCTANCE ( , TRANSCONDUCTANCE (<br>os fs<br>g g<br>**----- End of picture text -----**<br>


**Figure 10. Output Conductance vs. Drain Current** 

**Figure 11. Output Conductance vs. Drain Current** 

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700<br>600 TO−92<br>500<br>400 SUPERSOT−3<br>300<br>200<br>100<br>0<br>0 20 40 60 80 100 120 140 160<br>T, AMBIENT TEMPERATURE ( ° C)<br>POWER DISSSIPATION, (mW)<br>**----- End of picture text -----**<br>


**Figure 12. Power Dissipation vs. Ambient Temperature** 

## **ORDERING INFORMATION** 

|**ORDERING INFORMATION**||||
|---|---|---|---|
|**Part Number**|**Top Mark**|**Package**|**Shipping**†|
|J109|J109|TO−92 3L<br>(Pb−Free)|10000 Units / Bulk|
|J109−D26Z|J109|TO−92 3L<br>(Pb−Free)|2000 / Tape & Reel|
|MMBFJ108|I8|SSOT 3L<br>(Pb−Free)|3000 / Tape & Reel|



†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. 

SUPERSOT is trademark of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other countries. 

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**5** 

MECHANICAL CASE OUTLINE **PACKAGE DIMENSIONS** 

**TO−92 3 4.825x4.76** CASE 135AN ISSUE O 

DATE 31 JUL 2016 

Electronic versions are uncontrolled except when accessed directly from the Document Repository. **DOCUMENT NUMBER: 98AON13880G** Printed  versions are uncontrolled  except when stamped  “CONTROLLED COPY” in red. **DESCRIPTION: TO−92 3 4.825X4.76 PAGE 1 OF 1** 

ON Semiconductor and          are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the rights of others. 

www.onsemi.com 

© Semiconductor Components Industries, LLC, 2019 

MECHANICAL CASE OUTLINE **PACKAGE DIMENSIONS** 

**TO−92 3 4.83x4.76 LEADFORMED** CASE 135AR ISSUE O 

DATE 30 SEP 2016 

Electronic versions are uncontrolled except when accessed directly from the Document Repository. **DOCUMENT NUMBER: 98AON13879G** Printed  versions are uncontrolled  except when stamped  “CONTROLLED COPY” in red. **DESCRIPTION: TO−92 3 4.83X4.76 LEADFORMED PAGE 1 OF 1** 

ON Semiconductor and          are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the rights of others. 

www.onsemi.com 

© Semiconductor Components Industries, LLC, 2019 

MECHANICAL CASE OUTLINE **PACKAGE DIMENSIONS** 

## **SOT−23/SUPERSOT −23, 3 LEAD, 1.4x2.9** CASE 527AG ISSUE A 

## DATE 09 DEC 2019 

## **GENERIC** 

**MARKING DIAGRAM*** XXX = Specific Device Code M = Month Code XXXM = Pb−Free Package 

*This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “ ”, may or may not be present. Some products may not follow the Generic Marking. 

(Note: Microdot may be in either location) 

Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed  versions are uncontrolled  except when stamped  “CONTROLLED COPY” in red. 

## **DOCUMENT NUMBER:** 

## **98AON34319E** 

**DESCRIPTION: SOT−23/SUPERSOT−23, 3 LEAD, 1.4X2.9** 

**PAGE 1 OF 1** 

ON Semiconductor and          are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the rights of others. 

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© Semiconductor Components Industries, LLC, 2019 

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