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MMBF5459...
JFET Transistor, JFET, -25 V, 16 mA, -8 V, SOT-23, 3 Pin, 150 °C
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- Manufacturer: ONSEMI
- Product type: JFETs
- No. of Pins: 3 Pin
- Channel Type: N Channel
- Transistor Type: JFET
- Transistor Mounting: Surface Mount
- Transistor Case Style: SOT-23
- Operating Temperature Max: 150°C
- Gate Source Cutoff Voltage Max: -8V
- Gate Source Breakdown Voltage Max: -25V
- Zero Gate Voltage Drain Current Max: 16mA
- Zero Gate Voltage Drain Current Idss Min: 4mA
| Delivery and price | |
|---|---|
| Units per pack | 5000 |
| Price | 0.051 € |
| Current stock | 10+ |
| Lead time | 30 days |
Datasheet
**==> picture [332 x 162] intentionally omitted <==** **----- Start of picture text -----**<br> 2N5457 MMBF5457<br>2N5458 MMBF5458<br>2N5459 MMBF5459<br>G<br>S<br>G S D TO-92 SOT-23 D NOTE: Source & Drain<br>Mark: 6D / 61S / 6L are interchangeable<br>**----- End of picture text -----**<br> ## **N-Channel General Purpose Amplifier** This device is a low level audio amplifier and switching transistors, and can be used for analog switching applications. Sourced from Process 55. **Absolute Maximum Ratings*** TA = 25°C unless otherwise noted |**Absolute Maximum Ratings*gs*s***TA = 25°C unless otherwise noted|| |---|---| |**Symbol**<br>**Parameter**|**Value**| |Drain-Gate Voltage|25| |Gate-Source Voltage|- 25| |Forward Gate Current|10| |Operating and Storage Junction Temperature Range|-55 to +150| - *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. ## **NOTES** : - **1)** These ratings are based on a maximum junction temperature of 150 degrees C. - **2)** These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. **Thermal Characteristics** TA = 25°C unless otherwise noted |**Symbol**<br>**Characteristic**|**Max**|**Max**| |---|---|---| ||**2N5457-5459**|***MMBF5457-5459**| |Total Device Dissipation<br>Derate above25°C|625<br>5.0|350<br>2.8| |Thermal Resistance, Junction to Case|125|| |Thermal Resistance, Junction to Ambient|357|556| - *Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06." 1997 Fairchild Semiconductor Corporation ## **N-Channel General Purpose Amplifier** (continued) |**Electrical Characteristics**TA = 25°C unless otherwise noted<br>OFF CHARACTERISTICS<br>**Symbol**<br>**Parameter**<br>ON CHARACTERISTICS<br>SMALL SIGNAL CHARACTERISTICS<br>V(BR)GSS<br>Gate-Source Breakdown Voltage<br>IGSS<br>Gate Reverse Current<br>VGS(off)<br>Gate-Source Cutoff Voltage<br>VGS<br>Gate-Source Voltage<br>IDSS<br>Zero-Gate Voltage Drain Current*<br>gfs<br>Forward Transfer Conductance*|TA = 25°C unless otherwise noted<br>**Test Conditions**<br>IG= 10µA, VDS= 0<br>VGS= -15 V, VDS= 0<br>VGS = -15 V, VDS =0, TA =100°C<br>VDS= 15 V, ID= 10 nA<br>**5457**<br>**5458**<br>**5459**<br>VDS= 15 V, ID= 100µA<br>**5457**<br>VDS= 15 V, ID= 200µA<br>**5458**<br>VDS= 15 V,ID= 400µA<br>**5459**<br>VDS= 15 V, VGS= 0<br>**5457**<br>**5458**<br>**5459**<br>VDS= 15 V, VGS= 0, f = 1.0 kHz<br>**5457**|**Min**<br>- 25<br>- 0.5<br>- 1.0<br>- 2.0<br>1.0<br>2.0<br>4.0<br>1000|**Typ**<br>- 2.5<br>- 3.5<br>- 4.5<br>3.0<br>6.0<br>9.0|**Max **<br>- 1.0<br>- 200<br>- 6.0<br>- 7.0<br>- 8.0<br>5.0<br>9.0<br>16<br>5000|**Units**<br>V<br>nA<br>nA<br>V<br>V<br>V<br>V<br>V<br>V<br>mA<br>mA<br>mA<br>µmhos| |---|---|---|---|---|---| ||**5458**|1500||5500|µmhos| ||**5459**|2000||6000|µmhos| |gos<br>Output Conductance*|VDS= 15 V, VGS= 0, f = 1.0 kHz||10|50|µmhos| |Ciss<br>Input Capacitance|VDS= 15 V, VGS= 0, f = 1.0 MHz||4.5|7.0|pF| |Crss<br>Reverse Transfer Capacitance|VDS= 15 V, VGS= 0, f = 1.0 MHz||1.5|3.0|pF| |NF<br>Noise Figure|VDS= 15 V, VGS= 0, f = 1.0 kHz,|||3.0|dB| ||RG= 1.0 megohm,BW = 1.0 Hz||||| ***** Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2% ## **Typical Characteristics** **==> picture [326 x 10] intentionally omitted <==** **----- Start of picture text -----**<br> Transfer Characteristics Transfer Characteristics<br>**----- End of picture text -----**<br> ## **N-Channel General Purpose Amplifier** (continued) ## **Typical Characteristics** (continued) **Transfer Characteristics** 10 ) Vesiorr) * —1.9 oe3= Vos **Common Drain-Source** **Output Conductance vs. Drain Current** **==> picture [112 x 70] intentionally omitted <==** **----- Start of picture text -----**<br> Transfer Characteristics<br>Vos = 16V ) = -2.6V<br>**----- End of picture text -----**<br> **==> picture [106 x 9] intentionally omitted <==** **----- Start of picture text -----**<br> Parameter Interaction<br>**----- End of picture text -----**<br> **==> picture [103 x 21] intentionally omitted <==** **----- Start of picture text -----**<br> Transconductance vs.<br>Drain Current<br>**----- End of picture text -----**<br> ## **N-Channel General Purpose Amplifier** (continued) ## **Typical Characteristics** (continued) **==> picture [110 x 22] intentionally omitted <==** **----- Start of picture text -----**<br> Channel Resistance vs.<br>Temperature<br>**----- End of picture text -----**<br> **==> picture [82 x 22] intentionally omitted <==** **----- Start of picture text -----**<br> Noise Voltage vs.<br>Frequency<br>**----- End of picture text -----**<br> **==> picture [135 x 10] intentionally omitted <==** **----- Start of picture text -----**<br> Leakage Current vs. Voltage<br>**----- End of picture text -----**<br> **==> picture [115 x 10] intentionally omitted <==** **----- Start of picture text -----**<br> Capacitance vs. Voltage<br>**----- End of picture text -----**<br> **==> picture [190 x 150] intentionally omitted <==** **----- Start of picture text -----**<br> Power Dissipation vs<br>Ambient Temperature<br>700 [| [| J J tT tT fT fT fT Ty yy<br>600 esGGG<br>|aN| | NI TO-92 |Pf| | GD| |<br>500<br>rT ft ft<br>400 SOT-23<br>Fo fT CULLENJ RK EH| [ f fT fT<br>300 || || |PAA|Pf“AA[|PT ENfTKetINDtTTPppftTyyt<br>200 Pf ft ft ft ft | Aw ONS TT<br>ee<br>100<br>| ee ee<br>0 LT |tT |tT | f tT ft T ft fT fT TTPAKNSA<br>0 25 50 75 100 125 150<br>TEMPERATURE ( C)o<br>D<br>P - POWER DISSIPATION (mW)<br>**----- End of picture text -----**<br> ## **TRADEMARKS** The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. |ACEx™|FASTr™|PowerTrench<br>||SyncFET™| |---|---|---|---|---| |Bottomless™|GlobalOptoisolator™|QFET™||TinyLogic™| |CoolFET™|GTO™|QS™||UHC™| |_CROSSVOLT_™|HiSeC™|QT Optoelectronics™||VCX™| |DOME™|ISOPLANAR™|Quiet Series™||| |E2CMOSTM|MICROWIRE™|SILENT SWITCHER||| |EnSignaTM|OPTOLOGIC™|SMART START™||| |FACT™|OPTOPLANAR™|SuperSOT™-3||| |FACT Quiet Series™|PACMAN™|SuperSOT™-6||| |<br>FAST|POP™|SuperSOT™-8||| ## **DISCLAIMER** FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. ## **LIFE SUPPORT POLICY** FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or 2. A critical component is any component of a life systems which, (a) are intended for surgical implant into support device or system whose failure to perform can the body, or (b) support or sustain life, or (c) whose be reasonably expected to cause the failure of the life failure to perform when properly used in accordance support device or system, or to affect its safety or with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. ## **PRODUCT STATUS DEFINITIONS** ## **Definition of Terms** |**Datasheet Identification**|**Product Status**|**Definition**| |---|---|---| |Advance Information|Formative or<br>In Design|This datasheet contains the design specifications for<br>product development. Specifications may change in<br>any manner without notice.| |Preliminary|First Production|This datasheet contains preliminary data, and<br>supplementary data will be published at a later date.<br>Fairchild Semiconductor reserves the right to make<br>changes at any time without notice in order to improve<br>design.| |No Identification Needed|Full Production|This datasheet contains final specifications. Fairchild<br>Semiconductor reserves the right to make changes at<br>any time without notice in order to improve design.| |Obsolete|Not In Production|This datasheet contains specifications on a product<br>that has been discontinued by Fairchild semiconductor.<br>The datasheet is printed for reference information only.| Rev. G
Updated at February 9, 2023
onsemi is a premier global supplier of intelligent power and sensing technologies, driving disruptive innovations across the automotive, industrial, and cloud infrastructure markets. Recognized for their commitment to sustainability and reliable supply chains, the company accelerates advancements in vehicle electrification, industrial automation, and 5G networks by solving the industry's most complex design challenges. At the core of their portfolio is an industry-leading selection of discrete semiconductors. This extensive range features thousands of high-performance bipolar transistors, single and dual MOSFETs, and a comprehensive array of diodes, including Zener, Schottky, and fast-recovery rectifiers. Engineered for superior thermal performance and energy efficiency, these foundational components are critical for demanding power conversion, switching, and signal conditioning applications. Beyond essential discretes, onsemi provides a robust suite of advanced power management and circuit protection solutions. Their lineup includes intelligent power modules, single IGBTs, and transient voltage suppression (TVS) diodes designed to safeguard sensitive circuitry. Complimented by integrated passive filters, AC/DC LED driver ICs, and specialized sub-2.4GHz RF transceivers, onsemi equips engineers with the scalable, high-quality technologies needed to build a cleaner, smarter, and more connected world.
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