MMBF4391LT1G

## MMBF4391L, MMBF4392L, MMBF4393L 

## JFET Switching Transistors 

## **N−Channel** 

## **Features** 

- S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable 

- These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant 

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## **www.onsemi.comonsemi.com** 

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1<br>2<br>SOT−23<br>CASE 318<br>STYLE 10<br>**----- End of picture text -----**<br>


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MAXIMUM RATINGS<br>**----- End of picture text -----**<br>


|**MAXIMUM RATINGS**|**MAXIMUM RATINGS**|**MAXIMUM RATINGS**|**MAXIMUM RATINGS**|**MAXIMUM RATINGS**|
|---|---|---|---|---|
|**Rating**<br>**Symbol**<br>**Value**<br>**Unit**<br>Drain−Source Voltage<br>VDS<br>30<br>Vdc<br>Drain−Gate Voltage<br>VDG<br>30<br>Vdc<br>Gate−Source Voltage<br>VGS<br>30<br>Vdc<br>Forward Gate Current<br>IG(f)<br>50<br>mAdc<br>**THERMAL CHARACTERISTICS**<br>~~===~~|||||
||**Characteristic**|**Symbol**|**Max**|**Unit**|
||Total Device Dissipation FR−5 Board|PD|||
||(Note 1) TA= 25°C<br>Derate above 25°C<br>Thermal Resistance, Junction−to−Ambient<br>Junction and Storage Temperature Range|R JA<br>TJ, Tstg|225<br>1.8<br>556<br>−55 to +150|mW<br>mW/°C<br>°C/W<br>°C|



Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. FR−5 = 1.0 0.75 0.062 in. 

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2 SOURCE<br>3<br>GATE<br>«<br>1 DRAIN<br>MARKING DIAGRAM<br>**----- End of picture text -----**<br>


XXX M 1 ~~=~~ XXX = Specific Device Code M = Date Code* = Pb−Free Package 

(Note: Microdot may be in either location) 

*Date Code orientation and/or overbar may vary depending upon manufacturing location. 

## **MARKING & ORDERING INFORMATION** 

See detailed ordering, marking and shipping information in the package dimensions section on page 2 of this data sheet. 

Publication Order Number: **MMBF4391LT1/D** 

**1** 

© Semiconductor Components Industries, LLC, 1994 **October, 2016 − Rev. 12** 

## **MMBF4391L, MMBF4392L, MMBF4393L** 

## **ELECTRICAL CHARACTERISTICS** (TA = 25 ° C unless otherwise noted) 

|**ELECTRICAL CHARACTERISTICS**(TA= 25°C unless otherwise noted)|||||
|---|---|---|---|---|
|**Characteristic**|**Symbol**|**Min**|**Max**|**Unit**|
|**OFF CHARACTERISTICS**|||||
|Gate−Source Breakdown Voltage<br>(IG= 1.0�Adc, VDS= 0)|V(BR)GSS|30|−|Vdc|
|Gate Reverse Current<br>(VGS= 15 Vdc, VDS= 0, TA= 25°C)<br>(VGS= 15 Vdc, VDS= 0, TA= 100°C)|IGSS|−<br>−|1.0<br>0.20|nAdc<br>�Adc|
|Gate−Source Cutoff Voltage<br>(VDS= 15 Vdc, ID= 10 nAdc)<br>MMBF4391LT1<br>MMBF4392LT1<br>MMBF4393LT1|VGS(off)|−4.0<br>−2.0<br>−0.5|−10<br>−5.0<br>−3.0|Vdc|
|Off−State Drain Current<br>(VDS= 15 Vdc, VGS= −12 Vdc)<br>(VDS= 15 Vdc, VGS= −12 Vdc, TA= 100°C)|ID(off)|−<br>−|1.0<br>1.0|nAdc<br>�Adc|
|**ON CHARACTERISTICS**|||||
|Zero−Gate−Voltage Drain Current<br>(VDS= 15 Vdc, VGS= 0)<br>MMBF4391LT1<br>MMBF4392LT1<br>MMBF4393LT1|IDSS|50<br>25<br>5.0|150<br>75<br>30|mAdc|
|Drain−Source On−Voltage<br>(ID= 12 mAdc, VGS= 0)<br>MMBF4391LT1<br>(ID= 6.0 mAdc, VGS= 0)<br>MMBF4392LT1<br>(ID= 3.0 mAdc, VGS= 0)<br>MMBF4393LT1|VDS(on)|−<br>−<br>−|0.4<br>0.4<br>0.4|Vdc|
|Static Drain−Source On−Resistance<br>(ID= 1.0 mAdc, VGS= 0)<br>MMBF4391LT1<br>MMBF4392LT1<br>MMBF4393LT1|rDS(on)|−<br>−<br>−|30<br>60<br>100|�|
|**SMALL−SIGNAL CHARACTERISTICS**|||||
|Input Capacitance<br>(VDS= 0 Vdc, VGS= −15 Vdc, f = 1.0 MHz)|Ciss|−|14|pF|
|Reverse Transfer Capacitance<br>(VDS= 0 Vdc, VGS= −12 Vdc, f = 1.0 MHz)|Crss|−|3.5|pF|



Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 

## **ORDERING INFORMATION** 

|**ORDERING INFORMATION**||||
|---|---|---|---|
|**Device**|**Marking**|**Package**|**Shipping**†|
|MMBF4391LT1G|6J|SOT−23<br>(Pb−Free)|3,000 / Tape & Reel|
|SMMBF4391LT1G*|6J|||
|MMBF4392LT1G|6K|||
|MMBF4393LT1G|M6G|||
|SMMBF4393LT1G*|M6G|||



†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. 

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**2** 

**MMBF4391L, MMBF4392L, MMBF4393L** 

## **TYPICAL CHARACTERISTICS** 

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1000<br>500 T J  = 25°C<br>200 RK = RD' MMBF4391MMBF4392 VGS(off) = 12 V= 7.0 V<br>MMBF4393 = 5.0 V<br>100<br>50<br>20<br>10<br>5.0 RK = 0<br>2.0<br>1.0<br>0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50<br>ID, DRAIN� CURRENT (mA)<br>, TURN-ON DELAY TIME (ns)<br>d(on)<br>t<br>**----- End of picture text -----**<br>


**Figure 1. Turn−On Delay Time** 

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1000<br>500 TJ = 25°C<br>200 MMBF4391MMBF4392 VGS(off) = 12 V= 7.0 V<br>100 MMBF4393 = 5.0 V<br>50 RK = RD'<br>20<br>10<br>5.0 RK = 0<br>2.0<br>1.0<br>0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50<br>ID, DRAIN� CURRENT (mA)<br>, TURN-OFF DELAY TIME (ns)<br>td(off)<br>**----- End of picture text -----**<br>


**Figure 3. Turn−Off Delay Time** 

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1000 T J  = 25°C<br>500 RK = RD' MMBF4391 VGS(off) = 12 V<br>MMBF4392 = 7.0 V<br>200<br>MMBF4393 = 5.0 V<br>100<br>50<br>20<br>10 RK = 0<br>5.0<br>2.0<br>1.0<br>0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50<br>ID, DRAIN� CURRENT (mA)<br>Figure 2. Rise Time<br>1000<br>500 T J  = 25°C<br>R K  = R D' MMBF4391 VGS(off) = 12 V<br>200 MMBF4392 = 7.0 V<br>MMBF4393 = 5.0 V<br>100<br>50<br>20<br>RK = 0<br>10<br>5.0<br>2.0<br>1.0<br>0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50<br>ID, DRAIN� CURRENT (mA)<br>, RISE TIME (ns)<br>rt<br>, FALL TIME (ns)<br>ft<br>**----- End of picture text -----**<br>


**Figure 4. Fall Time** 

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**MMBF4391L, MMBF4392L, MMBF4393L** 

## **NOTE 1** 

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VDD<br>RD<br>SET VDS(off) = 10 V<br>INPUT RK RT<br>RGEN OUTPUT<br>50 � RGG 50<br>50<br>VGEN � VGG �<br>INPUT PULSE RGG > RK<br>tr ≤ 0.25 ns<br>tf ≤ 0.5 ns RD' = RD(RT + 50)<br>PULSE WIDTH = 2.0 �s RD + RT + 50<br>DUTY CYCLE ≤ 2.0%<br>**----- End of picture text -----**<br>


**Figure 5. Switching Time Test Circuit** 

The switching characteristics shown above were measured using a test circuit similar to Figure 5. At the beginning of the switching interval, the gate voltage is at Gate Supply Voltage (−VGG). The Drain−Source Voltage (VDS) is slightly lower than Drain Supply Voltage (VDD) due to the voltage divider. Thus Reverse Transfer Capacitance (Crss) of Gate−Drain Capacitance (Cgd) is charged to VGG + VDS. 

During the turn−on interval, Gate−Source Capacitance (Cgs) discharges through the series combination of RGen and RK. Cgd must discharge to VDS(on) through RG and RK in series with the parallel combination of effective load impedance (R’D) and Drain−Source Resistance (rDS). During the turn−off, this charge flow is reversed. 

Predicting turn−on time is somewhat difficult as the channel resistance rDS is a function of the gate−source voltage. While Cgs discharges, VGS approaches zero and rDS decreases. Since Cgd discharges through rDS, turn−on time is non−linear. During turn−off, the situation is reversed with rDS increasing as Cgd charges. 

The above switching curves show two impedance conditions; 1) RK is equal to RD’ which simulates the switching behavior of cascaded stages where the driving source impedance is normally the load impedance of the previous stage, and 2) RK = 0 (low impedance) the driving source impedance is that of the generator. 

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20<br>MMBF4392<br>MMBF4391<br>10<br>MMBF4393<br>7.0<br>5.0 Tchannel = 25°C<br>VDS = 15 V<br>3.0<br>2.0<br>0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50<br>ID, DRAIN� CURRENT (mA)<br>Figure 6. Typical Forward Transfer Admittance<br>200<br>IDSS 25 mA 50 mA 75 mA 100 mA 125 mA<br>= 10<br>160 mA<br>120<br>80<br>40<br>Tchannel = 25°C<br>0<br>0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0<br>VGS, GATE-SOURCE VOLTAGE (VOLTS)<br>, FORWARD TRANSFER ADMITTANCE (mmhos)<br>fs<br>V<br>RESISTANCE (OHMS)<br>, DRAIN-SOURCE ON-STATE<br>DS(on)<br>r<br>**----- End of picture text -----**<br>


**Figure 8. Effect of Gate−Source Voltage on Drain−Source Resistance** 

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15<br>10<br>C gs<br>7.0<br>5.0 C gd<br>3.0 T channel  = 25°C<br>2.0 (C ds  is negligible<br>1.5<br>1.0<br>0.03 0.05 0.1 0.3 0.5 1.0 3.0 5.0 10 30<br>VR, REVERSE VOLTAGE (VOLTS)<br>Figure 7. Typical Capacitance<br>2.0<br>ID = 1.0 mA<br>1.8 VGS = 0<br>1.6<br>1.4<br>1.2<br>1.0<br>0.8<br>0.6<br>0.4<br>-70 -40 -10 20 50 80 110 140 170<br>Tchannel, CHANNEL TEMPERATURE (°C)<br>C, CAPACITANCE (pF)<br>, DRAIN-SOURCE ON-STATE<br>RESISTANCE (NORMALIZED)<br>DS(on)<br>r<br>**----- End of picture text -----**<br>


**Figure 9. Effect of Temperature on Drain−Source On−State Resistance** 

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**MMBF4391L, MMBF4392L, MMBF4393L** 

## **NOTE 2** 

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100 Tchannel = 25°C 10<br>90 9.0<br>80 8.0<br>70 rDS(on) @ VGS = 0 7.0<br>60 6.0<br>50 VGS(off) 5.0<br>40 4.0<br>30 3.0<br>20 2.0<br>10 1.0<br>0 0<br>10 20 30 40 50 60 70 80 90 100 110 120 130 140 150<br>IDSS, ZERO-GATE VOLTAGE DRAIN CURRENT (mA)<br>(VOLTS)<br>, DRAIN-SOURCE ON-STATE RESISTANCE (OHMS) , GATE-SOURCE VOLTAGE<br>GS<br>V<br>rDS(on)<br>**----- End of picture text -----**<br>


**Figure 10. Effect of IDSS on Drain−Source Resistance and Gate−Source Voltage** 

The Zero−Gate−Voltage Drain Current (IDSS) is the principle determinant of other J−FET characteristics. Figure 10 shows the relationship of Gate−Source Off Voltage (VGS(off)) and Drain−Source On Resistance (rDS(on)) to IDSS. Most of the devices will be within ±10% of the values shown in Figure 10. This data will be useful in predicting the characteristic variations for a given part number. 

For example: Unknown 

rDS(on) and VGS range for an MMBF4392 The electrical characteristics table indicates that an MMBF4392 has an IDSS range of 25 to 75 mA. Figure 10 shows rDS(on) = 52 � for IDSS = 25 mA and 30 � for IDSS = 75 mA. The corresponding VGS values are 2.2 V and 4.8 V. 

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**MMBF4391L, MMBF4392L, MMBF4393L** 

## **PACKAGE DIMENSIONS** 

**SOT−23 (TO−236)** CASE 318−08 ISSUE AR 

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D NOTES:<br>1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.<br>2. CONTROLLING DIMENSION: MILLIMETERS.<br>3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH.<br>0.25 MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF<br>as 3 s = THE BASE MATERIAL.<br>(| E HE T 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH,PROTRUSIONS, OR GATE BURRS.<br>1 2<br>MILLIMETERS INCHES<br>DIM MIN NOM MAX MIN NOM MAX<br>L A 0.89 1.00 1.11 0.035 0.039 0.044<br>3X b L1 A1b 0.010.37 0.060.44 0.100.50 0.0000.015 0.0020.017 0.0040.020<br>e VIEW C c 0.08 0.14 0.20 0.003 0.006 0.008<br>TOP VIEW D 2.80 2.90 3.04 0.110 0.114 0.120<br>E 1.20 1.30 1.40 0.047 0.051 0.055<br>e 1.78 1.90 2.04 0.070 0.075 0.080<br>L 0.30 0.43 0.55 0.012 0.017 0.022<br>A L1 0.35 0.54 0.69 0.014 0.021 0.027<br>H E 2.10 2.40 2.64 0.083 0.094 0.104<br>T 0 −−− 10 0 −−− 10<br>ee A1 SIDE VIEW SEE VIEW C c STYLE 10:<br>END VIEW PIN 1. DRAIN<br>2. SOURCE<br>3. GATE<br>**----- End of picture text -----**<br>


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RECOMMENDED<br>SOLDERING FOOTPRINT*<br>3X<br>2.90 r o 0.90<br>L O\ cr<br>3X 0.80 ft LLL 0.95<br>PITCH<br>DIMENSIONS: MILLIMETERS<br>**----- End of picture text -----**<br>


*For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. 

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