MMBD717LT1G
Schottky Rectifier, 20 V, 1 mA, Dual Common Anode, SC-70, 3 Pins, 370 mV
- Manufacturer: ONSEMI
- Product type: Schottky Rectifier Diodes
- Repetitive Reverse Voltage Vrrm Max:20V; Forward Current If(AV):1mA; Diode Configuration:Dual Common Anode; Diode Case Style:SC-70; No. of Pins:3Pins; Forward Voltage VF Max:370mV; Forward Su
- SVHC: No SVHC (25-Jun-2025)
- No. of Pins: 3Pins
- Product Range: MMBD7
- Qualification: AEC-Q101
- Diode Mounting: Surface Mount
- Diode Case Style: SC-70
- Diode Configuration: Dual Common Anode
- Forward Voltage Max: 370mV
- Forward Surge Current: -
- Average Forward Current: 1mA
- Operating Temperature Max: 150°C
- Repetitive Peak Reverse Voltage: 20V
| Delivery and price | |
|---|---|
| Units per pack | 1000 |
| Price | 0.057 € |
| Current stock | 1000+ |
| Lead time | 30 days |
## MMBD717LT1G ## Common Anode Schottky Barrier Diodes These Schottky barrier diodes are designed for high speed switching applications, circuit protection, and voltage clamping. Extremely low forward voltage reduces conduction loss. Miniature surface mount package is excellent for hand held and portable applications where space is limited. ## **Features** - Extremely Fast Switching Speed - Extremely Low Forward Voltage − 0.28 V (Typ) @ IF = 1 mAdc - These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant ## **http://onsemi.com** ## **20 VOLT SCHOTTKY BARRIER DETECTOR AND SWITCHING DIODES** CATHODE ANODE 1 **MAXIMUM RATINGS** (TJ = 125 ° C unless otherwise noted) 3 2 — **Rating Symbol Value Unit** CATHODE Reverse Voltage VR 20 V Forward Power Dissipation PF @ TA = 25 ° C 200 mW Derate above 25 ° C 1.6 mW/ ° C 1 Operating Junction Temperature Range TJ −55 to +150 ° C **SC−70 / SOT−323** ~~a~~ Storage Temperature Range Tstg −55 to +150 ~~s~~ ° C **CASE 419** Stresses exceeding Maximum Ratings may damage the device. Maximum **STYLE 4** Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. **MARKING DIAGRAM ELECTRICAL CHARACTERISTICS** (TA = 25 ° C unless otherwise noted) B3 M **Rating Symbol Min Typ Max Unit** Reverse Breakdown Voltage V(BR)R 20 − − V (IR = 10 A) 1 Total Capacitance CT − 2.0 2.5 PF B3 = Device Code (VR = 1.0 V, f = 1.0 MHz) M = Date Code* Reverse Leakage (VR = 10 V) IR − 0.05 1.0 Adc = Pb−Free Package (Note: Microdot may be in either location) (For each individual diode while the second diode is unbiased) *Date Code orientation and/or overbar may vary depending upon manufacturing location. ~~pt~~ Forward Voltage (IF = 1.0 mAdc) VF − 0.28 0.37 Vdc - ~~tt~~ **ORDERING INFORMATION** **Device Package Shipping**[†] MMBD717LT1G SC−70 3,000 / Tape & Reel (Pb−Free) ~~a~~ †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Publication Order Number: **1** © Semiconductor Components Industries, LLC, 2011 **December, 2011 − Rev. 9** **MMBD717LT1/D** **MMBD717LT1G** **==> picture [487 x 427] intentionally omitted <==** **----- Start of picture text -----**<br> 820 �<br>+10 V 2 k<br>100 �H IF 0.1 �F tr t p t IF<br>0.1 �F 10% t rr t<br>DUT<br>50 � OUTPUT 50 � INPUT 90%<br>PULSE SAMPLING iR(REC) = 1 mA<br>GENERATOR OSCILLOSCOPE VR IR OUTPUT PULSE<br>INPUT SIGNAL<br>(IF = IR = 10 mA; measured<br>at iR(REC) = 1 mA)<br>NOTES: 1. A 2.0 k � variable resistor adjusted for a Forward Current (IF) of 10 mA.<br> 2. Input pulse is adjusted so IR(peak) is equal to 10 mA.<br> 3. tp » trr<br>Figure 1. Recovery Time Equivalent Test Circuit<br>10 100<br>TA = 150°C<br>10 125°C<br>1.0 85°C<br>1.0<br>0.1<br>1�50°C<br>0.01<br>25°C<br>1�25°C 85°C 25°C -�40°C -�55°C<br>0.1 0.001<br>0 0.05 0.1 0.15 0.2 0.25 0.3 0.35 0.4 0.45 0.5 0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10<br>VF, FORWARD VOLTAGE (VOLTS) VR, REVERSE VOLTAGE (VOLTS)<br>A)<br>μ<br>IR, REVERSE CURRENT (<br>IF, FORWARD CURRENT (mA)<br>**----- End of picture text -----**<br> **Figure 2. Typical Forward Voltage** **Figure 3. Reverse Current versus Reverse Voltage** **==> picture [240 x 178] intentionally omitted <==** **----- Start of picture text -----**<br> 3.0<br>2.5<br>2.0<br>1.5<br>1.0<br>0.5<br>0<br>0 2.0 4.0 6.0 8.0 10 12 14 16 18<br>VR, REVERSE VOLTAGE (VOLTS)<br>Figure 4. Typical Capacitance<br>CT, CAPACITANCE (pF)<br>**----- End of picture text -----**<br> **http://onsemi.com** **2** MECHANICAL CASE OUTLINE **PACKAGE DIMENSIONS** **==> picture [37 x 36] intentionally omitted <==** **SC−70 (SOT−323)** CASE 419 ISSUE P **==> picture [81 x 8] intentionally omitted <==** **----- Start of picture text -----**<br> DATE 07 OCT 2021<br>**----- End of picture text -----**<br> **SCALE 4:1** ## **GENERIC MARKING DIAGRAM** **==> picture [116 x 78] intentionally omitted <==** **----- Start of picture text -----**<br> XX M �<br>�<br>1<br>XX = Specific Device Code<br>M = Date Code<br>� = Pb−Free Package<br>**----- End of picture text -----**<br> *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “ � ”, may or may not be present. Some products may not follow the Generic Marking. **==> picture [191 x 63] intentionally omitted <==** **----- Start of picture text -----**<br> STYLE 1: STYLE 2: STYLE 3:<br>CANCELLED PIN 1. ANODE PIN 1. BASE<br>2. N.C. 2. EMITTER<br>3. CATHODE 3. COLLECTOR<br>STYLE 6: STYLE 7: STYLE 8:<br>PIN 1. EMITTER PIN 1. BASE PIN 1. GATE<br> 2. BASE 2. EMITTER 2. SOURCE<br> 3. COLLECTOR 3. COLLECTOR 3. DRAIN<br>**----- End of picture text -----**<br> **==> picture [206 x 63] intentionally omitted <==** **----- Start of picture text -----**<br> STYLE 4: STYLE 5:<br>PIN 1. CATHODE PIN 1. ANODE<br>2. CATHODE 2. ANODE<br>3. ANODE 3. CATHODE<br>STYLE 9: STYLE 10: STYLE 11:<br>PIN 1. ANODE PIN 1. CATHODE PIN 1. CATHODE<br> 2. CATHODE 2. ANODE 2. CATHODE<br> 3. CATHODE-ANODE 3. ANODE-CATHODE 3. CATHODE<br>**----- End of picture text -----**<br> ## **DOCUMENT NUMBER: 98ASB42819B** **DESCRIPTION: SC−70 (SOT−323)** Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. **PAGE 1 OF 1** **onsemi** and are trademarks of Semiconductor Components Industries, LLC dba **onsemi** or its subsidiaries in the United States and/or other countries. **onsemi** reserves the right to make changes without further notice to any products herein. **onsemi** makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does **onsemi** assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. **onsemi** does not convey any license under its patent rights nor the rights of others. www.onsemi.com © Semiconductor Components Industries, LLC, 2019 **onsemi** , , and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “ **onsemi** ” or its affiliates and/or subsidiaries in the United States and/or other countries. **onsemi** owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of **onsemi** ’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. **onsemi** reserves the right to make changes at any time to any products or information herein, without notice. The information herein is provided “as−is” and **onsemi** makes no warranty, representation or guarantee regarding the accuracy of the information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does **onsemi** assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using **onsemi** products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by **onsemi** . “Typical” parameters which may be provided in **onsemi** data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. **onsemi** does not convey any license under any of its intellectual property rights nor the rights of others. **onsemi** products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use **onsemi** products for any such unintended or unauthorized application, Buyer shall indemnify and hold **onsemi** and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that **onsemi** was negligent regarding the design or manufacture of the part. **onsemi** is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. ## **PUBLICATION ORDERING INFORMATION** **LITERATURE FULFILLMENT** : **TECHNICAL SUPPORT Email Requests to:** orderlit@onsemi.com **North American Technical Support: Europe, Middle East and Africa Technical Support:** Voice Mail: 1 800−282−9855 Toll Free USA/Canada Phone: 00421 33 790 2910 **onsemi Website:** www.onsemi.com Phone: 011 421 33 790 2910 For additional information, please contact your local Sales Representative ◊ **==> picture [232 x 43] intentionally omitted <==**
Updated at June 4, 2026
onsemi is a premier global supplier of intelligent power and sensing technologies, driving disruptive innovations across the automotive, industrial, and cloud infrastructure markets. Recognized for their commitment to sustainability and reliable supply chains, the company accelerates advancements in vehicle electrification, industrial automation, and 5G networks by solving the industry's most complex design challenges. At the core of their portfolio is an industry-leading selection of discrete semiconductors. This extensive range features thousands of high-performance bipolar transistors, single and dual MOSFETs, and a comprehensive array of diodes, including Zener, Schottky, and fast-recovery rectifiers. Engineered for superior thermal performance and energy efficiency, these foundational components are critical for demanding power conversion, switching, and signal conditioning applications. Beyond essential discretes, onsemi provides a robust suite of advanced power management and circuit protection solutions. Their lineup includes intelligent power modules, single IGBTs, and transient voltage suppression (TVS) diodes designed to safeguard sensitive circuitry. Complimented by integrated passive filters, AC/DC LED driver ICs, and specialized sub-2.4GHz RF transceivers, onsemi equips engineers with the scalable, high-quality technologies needed to build a cleaner, smarter, and more connected world.
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