MMBD4148SE.

November 2014 

## **MMBD4148 / MMBD4148SE / MMBD4148CC / MMBD4148CA Small Signal Diode** 

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3<br>2<br>v<br>1<br>SOT-23<br>**----- End of picture text -----**<br>


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Connection Diagram<br>4148 4148SE<br>3 3<br>1 2NC 1 2<br>4148CC 4148CA<br>3 3<br>1 2 1 2<br>**----- End of picture text -----**<br>


## **Ordering Information** 

|**Part Number**|**Top Mark**|**Package**|**Packing Method**|
|---|---|---|---|
|MMBD4148|5H|SOT-23 3L|Tape and Reel|
|MMBD4148_D87Z|5H|SOT-23 3L|Tape and Reel|
|MMBD4148SE|D4|SOT-23 3L|Tape and Reel|
|MMBD4148CC|D5|SOT-23 3L|Tape and Reel|
|MMBD4148CA|D6|SOT-23 3L|Tape and Reel|



## **Absolute Maximum Ratings** 

Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only. Values are at TA = 25°C unless otherwise noted. 

|**Symbol**|**Parameter**|**Parameter**|**Value**|**Unit**|
|---|---|---|---|---|
|VRRM|Maximum Repetitive Reverse Voltage||100|V|
|IF(AV)|Average Rectified Forward Current||200|mA|
|IFSM|Non-Repetitive Peak Forward<br>Surge Current|Pulse Width = 1.0 second|1.0|A|
|||Pulse Width = 1.0 microsecond|2.0||
|TSTG|Storage Temperature Range||-55 to +150|°C|
|TJ|Operating Junction Temperature||150|°C|



© 2004 Fairchild Semiconductor Corporation MMBD4148 / MMBD4148SE / MMBD4148CC / MMBD4148CA Rev. 1.1.0 

www.fairchildsemi.com 

## **Thermal Characteristics** 

Values are at TA = 25°C unless otherwise noted. **Symbol Parameter Value Unit** PD Power Dissipation 350 mW R θ JA Thermal Resistance, Junction-to-Ambient 357 ° C/W ~~i~~ 

## **Electrical Characteristics** 

Values are at TA = 25°C unless otherwise noted. 

**Symbol Parameter Conditions Min. Max. Unit** IR = 5.0 μ A 75 VR Breakdown Voltage V IR = 100 μ A 100 VF Forward Voltage IF = 10 mA 1.0 V VR = 20 V 25 nA IR Reverse Leakage Current VR = 20 V, TA = 150°C 50 μ A VR = 75 V 5.0 μ A ~~=~~ CT Total Capacitance VR = 0 V, f = 1.0 MHz 4.0 pF trr Reverse Recovery Time IIFRR = 10 mA, V = 1.0 mA, RR = 6.0 V, L = 100 Ω 4.0 ns ~~lL[mUd)slC—FHAhehlC] A__=hCULLUh~~ © 2004 Fairchild Semiconductor Corporation MMBD4148 / MMBD4148SE / MMBD4148CC / MMBD4148CA Rev. 1.1.0 2 

www.fairchildsemi.com 

## **Typical Performance Characteristics** 

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150 Ta= 25  C ° 300 Ta= 25  C °<br>Tt Pe<br>250<br>140<br>| ot rr a<br>200<br>130 ei 150 [pH<br>ett Etes<br>100<br>120 PT er [-<br>50<br>110 eirT 0 enSYES<br>1              2          3           5              10             20       30        50            100 10                              20                30                      50            70             100<br>Reverse Current, IR [  A]μ Reverse Voltage, VR [V]<br>Figure 1. Reverse Voltage vs. Reverse Current Figure 2. Reverse Current vs. Reverse Voltage<br>BV - 1.0 to 100  μ A IR - 10 to 100 V<br>Ta= 25  C ° Ta= 25  C °<br>700<br>450<br>SPZlRslien enea<br>650<br>400<br>ee en<br>a a<br>600<br>350 tee a pea<br>See 550 St<br>300<br>eet Eo 500 eH<br>250 eH HH Pc<br>1               2        3           5              10             20       30         50            100 eT 450 0.1          0.2       0.3        0.5             1               2        3           5              10 es<br>Forward Current, IF [  A]μ Forward Current, IF [mA]<br>Figure 3. Forward Voltage vs. Forward Current Figure 4. Forward Voltage vs. Forward Current<br>VF - 1.0 to 100  μ A VF - 0.1 to 10 mA<br>Ta= 25  C ° 1.3 Ta= 25  C °<br>1.41.2 erona ee 1.2 FtR E T TT TTETTHHTt<br>LT ea PEEP ere<br>1.0 | | TT CO ATTT es<br>1.1<br>0.8 er)Perr UESa<br>eerie<br>0.6 10              20       30         50             100            200     300        500 Lt TT TTTer 1.0 0 EEREa 2 4 6 8 EESSE 10 12 14<br>Forward Current, IF [mA] Reverse Voltage [V]<br> [V]  [nA]<br>Reverse Voltage, V    R Reverse Current, I    R<br> [mV]  [mV]<br>    F       F<br>Forward Voltage, V Forward Voltage, V<br> [V]<br>      F<br>Forward Voltage, V Total Capacitance [pF]<br>**----- End of picture text -----**<br>


**Figure 1. Reverse Voltage vs. Reverse Current BV - 1.0 to 100** μ **A** 

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Figure 3. Forward Voltage vs. Forward Current<br>VF - 1.0 to 100  μ A<br>**----- End of picture text -----**<br>


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Figure 4. Forward Voltage vs. Forward Current<br>VF - 0.1 to 10 mA<br>**----- End of picture text -----**<br>


**Figure 5. Forward Voltage vs. Forward Current VF - 10 to 800 mA** 

**Figure 6. Total Capacitance vs. Reverse Voltage** 

© 2004 Fairchild Semiconductor Corporation MMBD4148 / MMBD4148SE / MMBD4148CC / MMBD4148CA Rev. 1.1.0 

www.fairchildsemi.com 

3 

## **Typical Performance Characteristics** (Continued) 

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4.0 Ta= 25  C ° 400<br>fe TT<br>3.5<br>SSS 300 ee ee<br>3.0<br>i ee<br>i ee<br>2.5 200<br>Pe pf | i}<br>2.0 a ee eee<br>SEE 100 ee eee<br>1.5<br>a po<br>1.0 i 0 Pe<br>10 20 30 40 50 60 0 50 100 150<br>Reverse Current [mA] Ambient Temperature, TA [  C] °<br>Figure 7. Reverse Recovery Time vs. Reverse Current Figure 8. Average Rectified Current (IF(AV))<br>TRR - IR 10 mA to 60 mA vs. Ambient Temperature (TA)<br>500 rf | fl ET<br>400 arf | ee| tf eeft ftee<br>300 PoP|oINMEKRTE<br>SOT-23 Pkg<br>200<br>100<br>0 oePt ONSETeo<br>0 50 100 150 200<br>Average Temperature, IO [  C] °<br>I<br>F(AV) - AVERAGE<br>RECTIFIED CURRENT -<br>mA<br>Current [mA]<br>Reverse Recovery Time [nS]<br> [mW]<br>Power Dissipation, P     D<br>**----- End of picture text -----**<br>


**Figure 7. Reverse Recovery Time vs. Reverse Current TRR - IR 10 mA to 60 mA** 

**Figure 9. Power Derating Curve** 

© 2004 Fairchild Semiconductor Corporation MMBD4148 / MMBD4148SE / MMBD4148CC / MMBD4148CA Rev. 1.1.0 

www.fairchildsemi.com 

4 

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0.95<br>2.92±0.20<br>3<br>1.40<br>1.30 [+0.20] 2.20<br>-0.15<br>1 2<br>(0.29) 0.60<br>0.37<br>0.95<br>0.20 A B 1.00<br>1.90 1.90<br>LAND PATTERN<br>RECOMMENDATION<br>1.20 MAX SEE DETAIL A<br>(0.93) 0.10<br>0.00<br>0.10 C<br>C<br>2.40±0.30<br>NOTES: UNLESS OTHERWISE SPECIFIED<br>GAGE PLANE<br>   A)  REFERENCE JEDEC REGISTRATION<br>TO-236, VARIATION AB, ISSUE H.<br>0.23    B)  ALL DIMENSIONS ARE IN MILLIMETERS.<br>0.08    C)  DIMENSIONS ARE INCLUSIVE OF BURRS,<br>0.25        MOLD FLASH AND TIE BAR EXTRUSIONS.<br>   D)  DIMENSIONING AND TOLERANCING PER<br>       ASME Y14.5M - 1994.<br>0.20 MIN<br>SEATING    E)  DRAWING FILE NAME: MA03DREV10<br>(0.55) PLANE<br>**----- End of picture text -----**<br>


- B)  ALL DIMENSIONS ARE IN MILLIMETERS. 

- C)  DIMENSIONS ARE INCLUSIVE OF BURRS, MOLD FLASH AND TIE BAR EXTRUSIONS. 

- D)  DIMENSIONING AND TOLERANCING PER ASME Y14.5M - 1994. 

SCALE: 2X 

## ~~—~~ 

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## **PRODUCT STATUS DEFINITIONS** 

|**Definition of Terms**|||
|---|---|---|
|**Datasheet Identification**|**Product Status**|**Definition**|
|Advance Information|Formative / In Design|Datasheet contains the design specifications for product development. Specifications may change<br>in anymanner without notice.|
|Preliminary|First Production|Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild<br>Semiconductor reserves the right to make changes at anytime without notice to improve design.|
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|Obsolete|Not In Production|Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor.<br>The datasheet is for reference information only.|



Rev. I73 

© Fairchild Semiconductor Corporation 

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