MMBD330T1G

## MMBD330T1G, SMMBD330T1G, MMBD770T1G, SMMBD770T1G 

## Schottky Barrier Diodes 

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Schottky barrier diodes are designed primarily for high−efficiency UHF and VHF detector applications. Readily available to many other fast switching RF and digital applications. They are housed in the SOT−323/SC−70 package which is designed for low−power surface mount applications. 

**SC−70/SOT−323 CASE 419** 

## **Features** 

- Extremely Low Minority Carrier Lifetime 

- Very Low Capacitance 

- Low Reverse Leakage 

1 3 **MARKING DIAGRAMS** 

- Available in 8 mm Tape and Reel 

- AEC Qualified and PPAP Capable 

 AEC Qualified and PPAP Capable  S Prefix for Automotive and Other Applications Requiring Unique XX M Site and Control Change Requirements  These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS 1 a Compliant* XX = Specific Device Code 4T = MMBD330T1 **MAXIMUM RATINGS** 5H = MMBD770T1 M = Date Code **Rating Symbol Value Unit** = Pb−Free Package Reverse Voltage VR Vdc (Note: Microdot may be in either location) MMBD330T1G, SMMBD330T1G 30 *Date Code orientation may vary depending MMBD770T1G, SMMBD770T1G 70 upon the manufacturing location. Forward Continuous Current (DC) IF 200 mA Nonrepetitive Peak Forward Current IFSM 1.0 A **ORDERING INFORMATION** (Note 1) **Device Package Shipping**[†] Forward Power DissipationTA = 25C PF 120 mW MMBD330T1G (Pb−Free)SC−70 3,000/Tape & Reel Junction Temperature TJ −55 to +125 C SMMBD330T1G SC−70 3,000/Tape & Reel Storage Temperature Range Tstg −55 to +150 C (Pb−Free) MMBD770T1G SC−70 3,000/Tape & Reel Stresses exceeding Maximum Ratings may damage the device. Maximum (Pb−Free) Ratings are stress ratings only. Functional operation above the Recommended SMMBD770T1G SC−70 3,000/Tape & Reel Operating Conditions is not implied. Extended exposure to stresses above the (Pb−Free) Recommended Operating Conditions may affect device reliability. ~~SS~~ 1. 60 Hz Halfsine. †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. 

Publication Order Number: **MMBD330T1/D** 

**1** 

 Semiconductor Components Industries, LLC, 2011 **November, 2011 − Rev. 6** 

## **MMBD330T1G, SMMBD330T1G, MMBD770T1G, SMMBD770T1G** 

**ELECTRICAL CHARACTERISTICS** (TA = 25C unless otherwise noted) 

|**ELECTRICAL CHARACTERISTICS**(TA= 25C unless otherwise|noted)|||||
|---|---|---|---|---|---|
|**Characteristic**|**Symbol**|**Min**|**Typ**|**Max**|**Unit**|
|Reverse Breakdown Voltage<br>(IR= 10�A)<br>MMBD330T1G, SMMBD330T1G<br>MMBD770T1G, SMMBD770T1G|V(BR)R|30<br>70|−<br>−|−<br>−|Volts|
|Diode Capacitance<br>(VR= 15 Volts, f = 1.0 MHZ)<br>MMBD330T1G, SMMBD330T1G<br>(VR= 20 Volts, f = 1.0 MHZ)<br>MMBD770T1G, SMMBD770T1G|CT|−<br>−|0.9<br>0.5|1.5<br>1.0|pF|
|Reverse Leakage<br>(VR= 25 V)<br>MMBD330T1G, SMMBD330T1G<br>(VR= 35 V)<br>MMBD770T1G, SMMBD770T1G|IR|−<br>−|13<br>9.0|200<br>200|nAdc|
|Forward Voltage<br>(IF= 1.0 mAdc)<br>MMBD330T1G, SMMBD330T1G<br>(IF= 10 mA)<br>(IF= 1.0 mAdc)<br>MMBD770T1G, SMMBD770T1G<br>(IF= 10 mA)|VF|−<br>−<br>−<br>−|0.38<br>0.52<br>0.42<br>0.70|0.45<br>0.60<br>0.50<br>1.0|Vdc|



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**2** 

**MMBD330T1G, SMMBD330T1G, MMBD770T1G, SMMBD770T1G** 

## **TYPICAL CHARACTERISTICS MMBD330T1G, SMMBD330T1G** 

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**----- Start of picture text -----**<br>
2.8<br>MMBD330T1<br>2.4 f = 1.0 MHz<br>2.0<br>1.6<br>1.2<br>0.8<br>0.4<br>0<br>0 3.0 6.0 9.0 12 15 18 21 24 27 30<br>VR, REVERSE VOLTAGE (VOLTS)<br>, TOTAL CAPACITANCE (pF)<br>CT<br>**----- End of picture text -----**<br>


**Figure 1. Total Capacitance** 

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500<br>MMBD330T1<br>400<br>KRAKAUER METHOD<br>300<br>200<br>100<br>0<br>0 10 20 30 40 50 60 70 80 90 100<br>IF, FORWARD CURRENT (mA)<br>, MINORITY CARRIER LIFETIME (ps)<br>�<br>**----- End of picture text -----**<br>


**Figure 2. Minority Carrier Lifetime** 

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10<br>MMBD330T1<br>1.0 TA = 100  C<br>TA = 75  C<br>0.1<br>TA = 25  C<br>0.01<br>0.001<br>0 6.0 12 18 24 30<br>VR, REVERSE VOLTAGE (VOLTS)<br>�<br>, REVERSE LEAKAGE (   A)<br>IR<br>**----- End of picture text -----**<br>


**Figure 3. Reverse Leakage** 

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100<br>MMBD330T1<br>TA = -�40  C<br>10<br>TA = 85  C<br>1.0<br>TA = 25  C<br>0.1<br>0.2 0.4 0.6 0.8 1.0 1.2<br>VF, FORWARD VOLTAGE (VOLTS)<br>, FORWARD CURRENT (mA)<br>IF<br>**----- End of picture text -----**<br>


**Figure 4. Forward Voltage** 

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**3** 

**MMBD330T1G, SMMBD330T1G, MMBD770T1G, SMMBD770T1G** 

## **TYPICAL CHARACTERISTICS MMBD770T1G, SMMBD770T1G** 

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**----- Start of picture text -----**<br>
2.0<br>MMBD770T1<br>f = 1.0 MHz<br>1.6<br>1.2<br>0.8<br>0.4<br>0<br>0 5.0 10 15 20 25 30 35 40 45 50<br>VR, REVERSE VOLTAGE (VOLTS)<br>, TOTAL CAPACITANCE (pF)<br>CT<br>**----- End of picture text -----**<br>


**Figure 5. Total Capacitance** 

**==> picture [237 x 170] intentionally omitted <==**

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500<br>MMBD770T1<br>400<br>KRAKAUER METHOD<br>300<br>200<br>100<br>0<br>0 10 20 30 40 50 60 70 80 90 100<br>IF, FORWARD CURRENT (mA)<br>, MINORITY CARRIER LIFETIME (ps)<br>�<br>**----- End of picture text -----**<br>


**Figure 6. Minority Carrier Lifetime** 

**==> picture [240 x 171] intentionally omitted <==**

**----- Start of picture text -----**<br>
10<br>MMBD770T1<br>1.0 TA = 100  C<br>TA = 75  C<br>0.1<br>0.01 TA = 25  C<br>0.001<br>0 10 20 30 40 50<br>VR, REVERSE VOLTAGE (VOLTS)<br>�<br>, REVERSE LEAKAGE (   A)<br>IR<br>**----- End of picture text -----**<br>


**Figure 7. Reverse Leakage** 

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**----- Start of picture text -----**<br>
100<br>MMBD770T1<br>10<br>TA = 85  C TA = -�40  C<br>1.0<br>TA = 25  C<br>0.1<br>0.2 0.4 0.8 1.2 1.6 2.0<br>VF, FORWARD VOLTAGE (VOLTS)<br>, FORWARD CURRENT (mA)<br>IF<br>**----- End of picture text -----**<br>


**Figure 8. Forward Voltage** 

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**4** 

**MMBD330T1G, SMMBD330T1G, MMBD770T1G, SMMBD770T1G** 

## **PACKAGE DIMENSIONS** 

**SC−70 (SOT−323)** CASE 419−04 ISSUE N 

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**----- Start of picture text -----**<br>
D NOTES:<br>1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.<br>e1 2. CONTROLLING DIMENSION: INCH.<br>MILLIMETERS INCHES<br>3 DIM MIN NOM MAX MIN NOM MAX<br>A 0.80 0.90 1.00 0.032 0.035 0.040<br>HE E A1 0.00 0.05 0.10 0.000 0.002 0.004<br>1 2 A2 0.70 REF 0.028 REF<br>b 0.30 0.35 0.40 0.012 0.014 0.016<br>c 0.10 0.18 0.25 0.004 0.007 0.010<br>ir a nr SSS ——— D 1.80 2.10 2.20 0.071 0.083 0.087<br>b E 1.15 1.24 1.35 0.045 0.049 0.053<br>e 1.20 1.30 1.40 0.047 0.051 0.055<br>e e1 0.65 BSC 0.026 BSC<br>L 0.20 0.38 0.56 0.008 0.015 0.022<br>HE 2.00 2.10 2.40 0.079 0.083 0.095<br>A A2 c STYLE 2:PIN 1. ANODE<br>2. N.C.<br>3. CATHODE<br>tJ 0.05 (0.002) A1 L<br>SOLDERING FOOTPRINT*<br>0.65<br>0.65 0.025<br>0.025<br>__ oe —_<br>i i a 1.9<br>0.075<br>0.9<br>0.035<br>0.7<br>LE<br>0.028<br>SCALE 10:1 mm<br>a — inches<br>**----- End of picture text -----**<br>


*For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. 

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**MMBD330T1/D** 

**5**