MMBD2836LT1G

## MMBD2835LT1G, MMBD2836LT1G, SMMBD2835LT1G 

## Monolithic Dual Switching Diodes 

**www.onsemi.com** 

## **Features** 

- S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable 

- These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant 

**MAXIMUM RATINGS (EACH DIODE)** 

**Rating Symbol Value Unit** Reverse Voltage VR Vdc MMBD2835LT1G, SMMBD2835LT1G 35 MMBD2836LT1G 75 Forward Current IF 100 mAdc ~~|~~ **THERMAL CHARACTERISTICS** Total Device Dissipation FR−5 Board PD 225 mW (Note 1) TA = 25 ° C Derate above 25 ° C 1.8 mW/ ° C Thermal Resistance, Junction−to−Ambient R JA 556 ° C/W Total Device Dissipation Alumina PD 300 mW Substrate, (Note 2) TA = 25 ° C Derate above 25 ° C 2.4 mW/ ° C Thermal Resistance, Junction−to−Ambient R JA 417 ° C/W ~~Tt~~ Junction and Storage Temperature TJ, Tstg −55 to ° C +150 Stresses exceeding those listed in the Maximum Ratings table may damage the ~~ee ee~~ device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 

1. FR−5 = 1.0 0.75 0.062 in. 2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina. 

**SOT−23 (TO−236AB) CASE 318−08 STYLE 12** 

CATHODE ANODE 1 3 2 CATHODE 

**MARKING DIAGRAM** 

xxx M 1 : xxx = Specific Device Code 

A3X = MMBD2835LT1G SMMBD2835LT1G A2X = MMBD2836LT1G M = Date Code = Pb−Free Package (Note: Microdot may be in either location) 

*Date Code orientation and/or overbar may vary depending upon manufacturing location. 

## **ORDERING INFORMATION** 

|**Device**|**Package**|**Shipping**†|
|---|---|---|
|MMBD2835LT1G|SOT−23<br>(Pb−Free)|3,000 /<br>Tape & Reel|
|SMMBD2835LT1G|SOT−23<br>(Pb−Free)|3,000 /<br>Tape & Reel|
|MMBD2836LT1G|SOT−23<br>(Pb−Free)|3,000 /<br>Tape & Reel|



- †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. 

Publication Order Number: **MMBD2835LT1/D** 

**1** 

© Semiconductor Components Industries, LLC, 1994 **October, 2016 − Rev. 7** 

**MMBD2835LT1G, MMBD2836LT1G, SMMBD2835LT1G** 

## **ELECTRICAL CHARACTERISTICS** (TA = 25 ° C unless otherwise noted) **(EACH DIODE)** 

|**ELECTRICAL CHARACTERISTICS**(TA= 25°C unless otherwise noted)**(EAC**|**H DIODE)**||||
|---|---|---|---|---|
|**Characteristic**|**Symbol**|**Min**|**Max**|**Unit**|
|**OFF CHARACTERISTICS**|||||
|Reverse Breakdown Voltage (IR= 100�Adc)<br>MMBD2835LT1G, SMMBD2835LT1G<br>MMBD2836LT1G|V(BR)|35<br>75|−<br>−|Vdc|
|Reverse Voltage Leakage Current (Note 3)<br>(VR= 30 Vdc)<br>MMBD2835LT1G, SMMBD2835LT1G<br>(VR= 50 Vdc)<br>MMBD2836LT1G|IR|−<br>−|100<br>100|nAdc|
|Diode Capacitance (VR= 0 V, f = 1.0 MHz)|CT|−|4.0|pF|
|Forward Voltage<br>(IF= 10 mAdc)<br>(IF= 50 mAdc)<br>(IF= 100 mAdc)|VF|−<br>−<br>−|1.0<br>1.0<br>1.2|Vdc|
|Reverse Recovery Time (IF= IR= 10 mAdc, IR(REC)= 1.0 mAdc) (Figure 1)|trr|−|4.0|ns|



Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 3. For each individual diode while the second diode is unbiased. 

**==> picture [484 x 179] intentionally omitted <==**

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820 �<br>IF<br>+10 V 2.0 k 0.1 �F tr t p t<br>100 �H IF 10% t rr t<br>0.1 �F<br>DUT 90%<br>50 � OUTPUT 50 � INPUT iR(REC) = 1.0 mA<br>IR<br>PULSE SAMPLING VR OUTPUT PULSE<br>GENERATOR OSCILLOSCOPE INPUT SIGNAL<br>(IF = IR = 10 mA; MEASURED<br>at iR(REC) = 1.0 mA)<br>Notes: 1. A 2.0 k �  variable resistor adjusted for a Forward Current (IF) of 10 mA.<br>Notes: 2. Input pulse is adjusted so IR(peak) is equal to 10 mA.<br>Notes: 3. tp » trr<br>**----- End of picture text -----**<br>


**Figure 1. Recovery Time Equivalent Test Circuit** 

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**2** 

**MMBD2835LT1G, MMBD2836LT1G, SMMBD2835LT1G** 

## **CURVES APPLICABLE TO EACH CATHODE** 

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100 10<br>TA = 150°C<br>TA = 85°C TA = -40°C 1.0 TA = 125°C<br>10<br>TA = 85°C<br>TA = 25°C 0.1<br>1.0 TA = 55°C<br>0.01<br>TA = 25°C<br>0.1 0.001<br>0.2 0.4 0.6 0.8 1.0 1.2 0 10 20 30 40 50<br>VF, FORWARD VOLTAGE (VOLTS) VR, REVERSE VOLTAGE (VOLTS)<br>�<br>, FORWARD CURRENT (mA)IF , REVERSE CURRENT (   A)IR<br>**----- End of picture text -----**<br>


**Figure 2. Forward Voltage** 

**Figure 3. Leakage Current** 

**==> picture [241 x 172] intentionally omitted <==**

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1.75<br>1.50<br>1.25<br>1.00<br>0.75<br>0 2.0 4.0 6.0 8.0<br>VR, REVERSE VOLTAGE (VOLTS)<br>, DIODE CAPACITANCE (pF)<br>D<br>C<br>**----- End of picture text -----**<br>


**Figure 4. Capacitance** 

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**3** 

**MMBD2835LT1G, MMBD2836LT1G, SMMBD2835LT1G** 

## **PACKAGE DIMENSIONS** 

**SOT−23 (TO−236)** CASE 318−08 ISSUE AR 

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D NOTES:<br>1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.<br>2. CONTROLLING DIMENSION: MILLIMETERS.<br>3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH.<br>0.25 MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF<br>a 3 = THE BASE MATERIAL.<br>| E HE T 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH,PROTRUSIONS, OR GATE BURRS.<br>1 2<br>MILLIMETERS INCHES<br>DIM MIN NOM MAX MIN NOM MAX<br>L A 0.89 1.00 1.11 0.035 0.039 0.044<br>3X b L1 A1b 0.010.37 0.060.44 0.100.50 0.0000.015 0.0020.017 0.0040.020<br>e VIEW C c 0.08 0.14 0.20 0.003 0.006 0.008<br>TOP VIEW D 2.80 2.90 3.04 0.110 0.114 0.120<br>E 1.20 1.30 1.40 0.047 0.051 0.055<br>e 1.78 1.90 2.04 0.070 0.075 0.080<br>L 0.30 0.43 0.55 0.012 0.017 0.022<br>A L1 0.35 0.54 0.69 0.014 0.021 0.027<br>H E 2.10 2.40 2.64 0.083 0.094 0.104<br>T 0 ° −−− 10 ° 0 ° −−− 10 °<br>A1 SIDE VIEW SEE VIEW C c STYLE 12:<br>END VIEW PIN 1. CATHODE<br>2. CATHODE<br>3. ANODE<br>RECOMMENDED<br>SOLDERING FOOTPRINT*<br>3X<br>2.90 _ 0.90<br>Lo | cr<br>3X 0.80 | LL L 0.95<br>PITCH<br>DIMENSIONS: MILLIMETERS<br>**----- End of picture text -----**<br>


*For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. 

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## **PUBLICATION ORDERING INFORMATION** 

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