MMBD1503A-D87Z

**DATA SHEET** ~~a~~ **www.onsemi.com** 

## Diode – Small Signal 

## MMBD1501A, MMBD1503A, MMBD1504A, MMBD1505A 

**SOT−23 (TO−236) SOT−23 CASE 318−08 CASE 318BM** 

## **ABSOLUTE MAXIMUM RATINGS** 

(Values are at TA = 25 ° C unless otherwise noted.) (Notes 1, 2) 

## **CONNECTION DIAGRAMS** 

**Symbol Parameter Value Unit** 1501A VRRM Maximum Repetitive Reverse Voltage 200 V IF(AV) Average Rectified Forward Current 200 mA IFSM Non−Repetitive Pulse Width = 1.0 s 1.0 A Peak Forward Surge Current Pulse Width = 1.0 s 2.0 TSTG Storage Temperature Range −55 to +150 ° C 1504A ~~**=**~~ TJ Operating Junction Temperature ~~===~~ −55 to +150 ° C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be 1 assumed, damage may occur and reliability may be affected. 

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1501A 3 1503A 3<br>1 2NC 1 2<br>1504A 3 1505A 3<br>1 2 1 2<br>**----- End of picture text -----**<br>


1. These ratings are based on a maximum junction temperature of 150 ° C. 

2. These are steady−state limits. **onsemi** should be consulted on applications involving pulsed or low−duty−cycle operations. **MARKING DIAGRAM THERMAL CHARACTERISTICS** (Values are at TA = 25A = 25 = 25 ° C unless otherwise noted.) A1xM **Symbol Parameter Value Unit** PDD Power Dissipation 350 mW 1 R θ JA Thermal Resistance, Junction−to−AmbientJunction−to−Ambient 357 ° C/W A1x = Specific Device Code ~~oe~~ x = 1, 3, 4, 5 M = Date Code **ELECTRICAL CHARACTERISTICS** = Pb−Free Package 

**THERMAL CHARACTERISTICS** (Values are at TA = 25A = 25 = 25 ° C unless otherwise noted.) A1xM **Symbol Parameter Value Unit** PDD Power Dissipation 350 mW 1 R θ JA 357 ° C/W A1x Thermal Resistance, Junction−to−AmbientJunction−to−Ambient ~~oe~~ x = 1, 3, 4, 5 M = Date Code **ELECTRICAL CHARACTERISTICS** = Pb−Free Package (Values are at TA = 25 ° C unless otherwise noted.) 

|**Symbol**|**Parameter**|**Conditions**|**Min**|**Max**|**Unit**|
|---|---|---|---|---|---|
|VR|Breakdown<br>Voltage|IR= 5.0 A|200|−|V|
|VF|Forward Voltage|IF= 1.0 mA|620|720|mV|
|||IF= 10 mA|720|830|mV|
|||IF= 50 mA|800|890|mV|
|||IF= 100 mA|830|930|mV|
|||IF= 200 mA|0.87|1.10|V|
|||IF= 300 mA|0.90|1.15|V|
|IR|Reverse Current|VR= 125 V|−|1.0|nA|
|||VR= 125 V,<br>TA= 150°C|−|3.0|A|
|||VR= 180 V|−|10.0|nA|
|||VR= 180 V,<br>TA= 150°C|−|5.0|A|
|CT|Total<br>Capacitance|VR= 0,<br>f = 1.0 MHz|−|4.0|pF|



## **ORDERING INFORMATION** 

See detailed ordering and shipping information on page 3 of this data sheet. 

Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 

Publication Order Number: **MMBD1501/D** 

**1** 

© Semiconductor Components Industries, LLC, 1993 **August, 2022 − Rev. 6** 

**MMBD1501A, MMBD1503A, MMBD1504A, MMBD1505A** 

## **TYPICAL CHARACTERISTICS** 

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325<br>TA = 25 ° C<br>300<br>275<br>250<br>3 5 10 20 30 50 100<br>IR, Reverse Current ( � A)<br>Figure 1. Reverse Voltage vs. Reverse Current<br>IR − 3.0 to 100  � A<br>550 T A  = 25 ° C<br>500<br>450<br>400<br>350<br>1 2 3 5 10 20 30 50 100<br>IF, Forward Current ( � A)<br>Figure 3. Forward Voltage vs. Forward Current<br>IF − 1 to 100  � A<br>1.20<br>T A  = 25 ° C<br>1.15<br>1.10<br>1.05<br>1.00<br>0.95<br>0.90<br>0.85<br>0.80<br>0.75<br>10 20 30 50 100 200 300 500 800<br>IF, Forward Current (mA)<br>, Reverse Voltage (V)<br>R<br>V<br>, Forward Voltage (V)<br>F<br>V<br>, Forward Voltage (V)<br>F<br>V<br>**----- End of picture text -----**<br>


**Figure 5. Forward Voltage vs. Forward Current IF − 10 to 800 mA** 

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3<br>TA = 25 ° C<br>2<br>1<br>0<br>130 150 170 190 205<br>VR, Reverse Voltage (V)<br>Figure 2. Reverse Current vs. Reverse Voltage<br>VR − 130 to 205 V<br>800<br>T A  = 25 ° C<br>750<br>700<br>650<br>600<br>550<br>500<br>0.1 0.2 0.3 0.5 1 2 3 5 10<br>IF, Forward Current (mA)<br>Figure 4. Forward Voltage vs. Forward<br>Current IF − 0.1 to 10 mA<br>4.0<br>TA = 25 ° C<br>3.5<br>3.0<br>2.5<br>2.0<br>1.5<br>1.0<br>0 2 4 6 8 10 12 14<br>VR, Reverse Voltage (V)<br>, Reverse Current (nA)<br>IR<br>, Forward Voltage (mV)<br>F<br>V<br>Total Capacitance (pF)<br>**----- End of picture text -----**<br>


**Figure 6. Total Capacitance vs. Reverse Voltage VR − 0 to 15 V** 

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**2** 

**MMBD1501A, MMBD1503A, MMBD1504A, MMBD1505A** 

## **TYPICAL CHARACTERISTICS** (Continued) 

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400 500<br>400<br>300<br>300<br>200 IF(AV) − Average Rectified Current (mA)<br>200 SOT−23 Pkg<br>100<br>100<br>0 0<br>0 50 100 150 0 50 100 150 200<br>TA, Ambient Temperature ( � C) Tavg, Average Temperature ( � C)<br>Current (mA)<br>, Power Dissipation (mW)<br>D<br>P<br>**----- End of picture text -----**<br>


**Figure 7. Average Rectified Current (IF(AV)) vs. Ambient Temperature (TA)** 

**Figure 8. Power Derating Curve** 

## **ORDERING INFORMATION** 

|**ORDERING INFORMATION**||||
|---|---|---|---|
|**Part Number**|**Specific Device Marking**|**Package Type**|**Shipping**†|
|MMBD1501A|A11|SOT−23 (TO−236)<br>(Pb−Free)|3,000 / Tape & Reel (7″)|
|MMBD1503A|A13|||
|MMBD1504A|A14|||
|MMBD1505A|A15|||
|NSVMMBD1504ALT1G*|A16|||
|MMBD1503A_D87Z|A13|SOT−23<br>(Pb−Free)|10,000 / Tape & Reel (13″)|
|NSVMMBD1501ALT3G*|A11|SOT−23 (TO−236)<br>(Pb−Free)|10,000 / Tape & Reel (13″)|



†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. 

*NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable. 

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**3** 

MECHANICAL CASE OUTLINE **PACKAGE DIMENSIONS** 

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SOT−23 (TO−236) 2.90x1.30x1.00 1.90P<br>CASE 318<br>ISSUE AU<br>DATE 14 AUG 2024<br>**----- End of picture text -----**<br>


**SCALE 4:1** 

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GENERIC<br>MARKING DIAGRAM*<br>XXXM �<br>�<br>1<br>XXX = Specific Device Code<br>M = Date Code<br>� = Pb−Free Package<br>**----- End of picture text -----**<br>


*This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “ � ”, may or may not be present. Some products may not follow the Generic Marking. 

## **STYLES ON PAGE 2** 

Electronic versions are uncontrolled except when accessed directly from the Document Repository. **DOCUMENT NUMBER: 98ASB42226B** Printed  versions are uncontrolled  except when stamped  “CONTROLLED COPY” in red. **DESCRIPTION: SOT−23 (TO−236) 2.90x1.30x1.00 1.90P PAGE 1 OF 2** 

**onsemi** and                     are trademarks of Semiconductor Components Industries, LLC dba **onsemi** or its subsidiaries in the United States and/or other countries. **onsemi** reserves the right to make changes without further notice to any products herein. **onsemi** makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does **onsemi** assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. **onsemi** does not convey any license under its patent rights nor the rights of others. 

www.onsemi.com 

© Semiconductor Components Industries, LLC, 2019 

DATE 14 AUG 2024 

## **SOT−23 (TO−236) 2.90x1.30x1.00 1.90P** CASE 318 ISSUE AU 

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STYLE 1 THRU 5: STYLE 6: STYLE 7: STYLE 8:<br>CANCELLED PIN 1. BASE PIN 1. EMITTER PIN 1. ANODE<br>2. EMITTER 2. BASE 2. NO CONNECTION<br>3. COLLECTOR 3. COLLECTOR 3. CATHODE<br>STYLE 9: STYLE 10: STYLE 11: STYLE 12: STYLE 13: STYLE 14:<br>PIN 1. ANODE PIN 1. DRAIN PIN 1. ANODE PIN 1. CATHODE PIN 1. SOURCE PIN 1. CATHODE<br>2. ANODE 2. SOURCE 2. CATHODE 2. CATHODE 2. DRAIN 2. GATE<br>3. CATHODE 3. GATE 3. CATHODE−ANODE 3. ANODE 3. GATE 3. ANODE<br>STYLE 15: STYLE 16: STYLE 17: STYLE 18: STYLE 19: STYLE 20:<br>PIN 1. GATE PIN 1. ANODE PIN 1. NO CONNECTION PIN 1. NO CONNECTION PIN 1. CATHODE PIN 1. CATHODE<br>2. CATHODE 2. CATHODE 2. ANODE 2. CATHODE 2. ANODE 2. ANODE<br>3. ANODE 3. CATHODE 3. CATHODE 3. ANODE 3. CATHODE−ANODE 3. GATE<br>STYLE 21: STYLE 22: STYLE 23: STYLE 24: STYLE 25: STYLE 26:<br>PIN 1. GATE PIN 1. RETURN PIN 1. ANODE PIN 1. GATE PIN 1. ANODE PIN 1. CATHODE<br>2. SOURCE 2. OUTPUT 2. ANODE  2. DRAIN  2. CATHODE  2. ANODE<br>3. DRAIN 3. INPUT 3. CATHODE  3. SOURCE  3. GATE  3. NO CONNECTION<br>STYLE 27: STYLE 28:<br>PIN 1. CATHODE PIN 1. ANODE<br> 2. CATHODE  2. ANODE<br> 3. CATHODE  3. ANODE<br>**----- End of picture text -----**<br>


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Electronic versions are uncontrolled except when accessed directly from the Document Repository.<br>DOCUMENT NUMBER: 98ASB42226B Printed  versions are uncontrolled  except when stamped  “CONTROLLED COPY” in red.<br>DESCRIPTION: SOT−23 (TO−236) 2.90x1.30x1.00 1.90P PAGE 2 OF 2<br>**----- End of picture text -----**<br>


**onsemi** and                     are trademarks of Semiconductor Components Industries, LLC dba **onsemi** or its subsidiaries in the United States and/or other countries. **onsemi** reserves the right to make changes without further notice to any products herein. **onsemi** makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does **onsemi** assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. **onsemi** does not convey any license under its patent rights nor the rights of others. 

www.onsemi.com 

© Semiconductor Components Industries, LLC, 2019 

**onsemi** , , and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “ **onsemi** ” or its affiliates and/or subsidiaries in the United States and/or other countries. **onsemi** owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of **onsemi** ’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. **onsemi** reserves the right to make changes at any time to any products or information herein, without notice. The information herein is provided “as−is” and **onsemi** makes no warranty, representation or guarantee regarding the accuracy of the information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does **onsemi** assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using **onsemi** products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by **onsemi** . “Typical” parameters which may be provided in **onsemi** data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. **onsemi** does not convey any license under any of its intellectual property rights nor the rights of others. **onsemi** products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use **onsemi** products for any such unintended or unauthorized application, Buyer shall indemnify and hold **onsemi** and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that **onsemi** was negligent regarding the design or manufacture of the part. **onsemi** is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. 

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