MMBD1405A

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ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. 

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**MMBD1401A / MMBD1403A / MMBD1404A / MMBD1405A High-Voltage General-Purpose Diode** 

## **Descriptions** 

Sourced from process 2V. 

## **Connection Diagram** 

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3<br>2<br>¢<br>1<br>SOT-23<br>**----- End of picture text -----**<br>


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1401A 1403A<br>3 3<br>1 2NC 1 2<br>1404A 1405A<br>3 3<br>1 2 1 2<br>**----- End of picture text -----**<br>


## **Ordering Information** 

|**Part Number**|**Top Mark**|**Package**|**Packing Method**|
|---|---|---|---|
|MMBD1401A|A29|SOT-23 3L|Tape and Reel|
|MMBD1403A|A32|SOT-23 3L|Tape and Reel|
|MMBD1404A|A33|SOT-23 3L|Tape and Reel|
|MMBD1405A|A34|SOT-23 3L|Tape and Reel|



© 2004 Fairchild Semiconductor Corporation MMBD1401A / MMBD1403A / MMBD1404A / MMBD1405A Rev. 1.1.0 

www.fairchildsemi.com 

## **Absolute Maximum Ratings**[(1), (2)] 

Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only. Values are at TA = 25°C unless otherwise noted. 

|**Symbol**|**Parameter**|**Parameter**|**Value**|**Unit**|
|---|---|---|---|---|
|WIV|Working Inverse Voltage||175|V|
|IO|Average Rectified Current||200|mA|
|IF|DC Forward Current||600|mA|
|if|Recurrent Peak Forward Current||700|mA|
|if(surge)|Non-Repetitive Peak Forward<br>Surge Current|Pulse Width = 1.0 second|1.0|A|
|||Pulse Width = 1.0 microsecond|2.0||
|TSTG|Storage Temperature Range||-55 to +150|°C|
|TJ|Operating Junction Temperature||150|°C|



## **Notes:** 

1. These ratings are based on a maximum junction temperature of 150 ° C. 

2. These are steady-state limits. Fairchild Semiconductor should be consulted on applications involving pulsed or low-duty-cycle operations. 

## **Thermal Characteristics**[(3)] 

Values are at TA = 25°C unless otherwise noted. 

|**Symbol**|**Parameter**|**Max.**|**Unit**|
|---|---|---|---|
|PD|Power Dissipation|350|mW|
||Derate above 25°C|2.8|mW/°C|
|RθJA|Thermal Resistance, Junction-to-Ambient|357|°C/W|



## **Note:** 

3. Device is mounted on glass epoxy PCB 1.6 inch × 1.6 inch × 0.06 inch, mounting pad for the collector lead minimum 

- 0.93 in[2] . 

## **Electrical Characteristics** 

Values are at TA = 25°C unless otherwise noted. 

|**Symbol**|**Parameter**|**Conditions**|**Min.**|**Max.**|**Unit**|
|---|---|---|---|---|---|
|BV|Breakdown Voltage|IR= 100μA|250||V|
|IR|Reverse Current|VR= 120 V||40|nA|
|||VR= 175 V||100|nA|
|VF|Forward Voltage|IF= 10 mA||800|mV|
|||IF= 50 mA|760|920|mV|
|||IF= 200 mA||1.1|V|
|||IF= 300 mA||1.25|V|
|CO|Diode Capacitance|VR= 0, f = 1.0 MHz||2.0|pF|
|TRR|Reverse Recovery Time|IF= IR= 30 mA,<br>IRR= 1.0 mA, RL= 100Ω||50|nS|



© 2004 Fairchild Semiconductor Corporation MMBD1401A / MMBD1403A / MMBD1404A / MMBD1405A Rev. 1.1.0 

www.fairchildsemi.com 

2 

## **Typical Performance Characteristics** 

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325 Ta= 25°C 50 a Ta= 25°C<br>Pett 40 a ee<br>Pe ee ee<br>30<br>Pee eee _——- a<br>300<br>ne 20 a<br>Oe SS Eee<br>Lf tier ET EE 10 a a<br>275 eeee ee 055 75 95 115 135 155 175 195<br>3 5 10 20 30 50 100 V    - REVERSE VOLTAGE (V)R<br>I   - REVERSE CURRENT  (uA)R GENERAL RULE: The Reverse Current of a diode will approximately<br>double for every ten (10) Degree C increase in Temperature<br>Figure 1. Reverse Voltage vs. Reverse Current Figure 2. Reverse Current vs. Reverse Voltage<br>BV - 1.0 to 100  μ A IR - 55 to 205 V<br>100 Ta= 25°C<br>Ta= 25°C a 450 ee ee<br>90<br>S———— Pe ear<br>80<br>400<br>70 ee ET TT<br>60 a—— ea e eeeeeee ae<br>350<br>50<br>_ | : eeeee7 eel<br>40<br>ee a 300 a<br>30 a  eea pa<br>20 I a Ee ZO<br>180 200 220 240 255 250 La] fet tT<br>V    - REVERSE VOLTAGE (V)R ct |tttET<br>GENERAL RULE: The Reverse Current of a diode will approximately 1 2 3 5 10 20 30 50 100<br>double for every ten Degree C increase in Temperature I   - FORWARD CURRENT  (uA)F<br>R<br>R<br>R<br>F<br>R<br>VV    - REVERSE VOLTAGE (V) I    - REVERSE CURRENT (nA)<br>II    - REVERSE CURRENT (nA)R F<br>VV    - FORWARD VOLTAGE (mV)<br>**----- End of picture text -----**<br>


**Figure 3. Reverse Current vs. Reverse Voltage IR - 180 to 255 V** 

**Figure 4. Forward Voltage vs. Forward Current VF - 1.0 to 100** μ **A** 

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VF - 0.1 to 10 mA<br>700725 Ta= 25°C 1.4 Ta= 25 ° C<br>— ee 1.3 Ea<br>a pe<br>650600 PoCT eT 1.21.1 poI} +H +at<br>re eee rea<br>De 1 ee<br>550<br>a ee 0.9 ee ae<br>ee a re<br>500 Lo]a es| Titeeof eeTy 0.8 eerr =2<br>4500.1 Rr 0.2 0.3 0.5 1 ST 2 3 5 10 0.710 ee 20 30 50 100 ee 200 300 500 800<br>I   - FORWARD CURRENT  (mA)F I   - FORWARD CURRENT  (mA)F<br>VV    - FORWARD VOLTAGE (mV)FF VV    - FORWARD VOLTAGE (mV)FF<br>**----- End of picture text -----**<br>


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Figure 5. Forward Voltage vs. Forward Current<br>VF - 0.1 to 10 mA<br>**----- End of picture text -----**<br>


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Figure 6. Forward Voltage vs. Forward Current<br>VF - 10 to 800 mA<br>**----- End of picture text -----**<br>


© 2004 Fairchild Semiconductor Corporation MMBD1401A / MMBD1403A / MMBD1404A / MMBD1405A Rev. 1.1.0 

www.fairchildsemi.com 

3 

## **Typical Performance Characteristics** (Continued) 

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1.3<br>Ta= 25°C<br>800 LL EUAN LTE ETE TT Po<br>a Ta= -40°C 1.2 TT tT<br>600 cae Ta= 25°C lll 1.1 PHi ttt ty Pt et<br>a REECE EEE EEEEEE<br>1<br>400 ern aecee en Tmalll P SECPSSEEEE E<br>Ta= +80°C<br>0.9<br>200 cea HEEEPERRSSSS<br>eT OI CCI CT 0.8 SeeEC<br>0.001 0.003 0.01 0.03 0.1 0.3 1 3 10 0 2 4 6 8 10 12 14 15<br>I   - FORWARD CURRENT  (mA)F REVERSE VOLTAGE (V)<br>Figure 7. Forward Voltage vs. Ambient Temperature Figure 8. Capacitance vs. Reverse Voltage<br>VF -  1.0  μ A - 10 mA (- 40 to +80 ° C)<br>50 PEELESPELTEE 500400 Hs}ee_}+_+_+_| +<br>40 aa 300 a<br>PPR EEE a<br>200<br>30 PELLET PR RAT LL ———<br>PEELE EEE ce 100 a<br>  IF = IR = 30 mA<br>PEELE Rloop = 100 Ohms a<br>20 TEE E TEE 0 [EES<br>1 1.5 2 2.5 3 0 50 100 150<br>Irr - REVERSE RECOVERY CURRENT (mA) T  - AMBIENT TEMPERATURE  (   C) A o<br>Figure 9. Reverse Recovery Time vs. Figure 10. Average Rectified Current(IO) andO) and) and<br>Reverse Recovery Current (Irr) Forward Current (IF) vs. Ambient Temperature(TAF) vs. Ambient Temperature(TA) vs. Ambient Temperature(TAA)<br>500 EN<br>400 | |N | ee| | eeef |<br>DO-35 Pkg<br>300 Reenn<br>200 FN SOT-23 Pkg Nf<br>100 SAR SES<br>| | | | |N KE<br>0 | | | | |INN1<br>0 50 100 150 200<br>I   - AVERAGE TEMPERATURE  (  C)O o<br>Io - AVERAGE RECTIFIED CURRENT - mA<br>I    - FORWARD CURRENT STEADY STATE - mAR<br>D<br>F<br>CAPACITANCE (pF)<br>F<br>VV    - FORWARD VOLTAGE (mV)<br>I - CURRENT (mA)<br>REVERSE RECOVERY (nS)<br>P   - POWER DISSIPATION (mW)<br>**----- End of picture text -----**<br>


**Figure 10. Average Rectified Current(IO) andO) and) and Forward Current (IF) vs. Ambient Temperature(TAF) vs. Ambient Temperature(TA) vs. Ambient Temperature(TAA)** 

**Figure 11. Power Derating Curve** 

© 2004 Fairchild Semiconductor Corporation MMBD1401A / MMBD1403A / MMBD1404A / MMBD1405A Rev. 1.1.0 

www.fairchildsemi.com 

4 

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ON Semiconductor and      are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. 

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