MMBD1205

## Small Signal Diodes 

## MMBD1201 - MMBD1205 

## **Features** 

- These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant 

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## **ABSOLUTE MAXIMUM RATINGS** (Note 1, Note 2) 

Values are at TA = 25 ° C unless otherwise noted. 

|Values are at TA = 25|Values are at TA = 25A = 25= 25°C unless otherwise noted.|Values are at TA = 25A = 25= 25°C unless otherwise noted.|||
|---|---|---|---|---|
|**Symbol**<br>~~ee~~|**Parameter**||**Value**|**Unit**|
|VRRM<br>~~ee~~|Maximum Repetitive Reverse<br>Voltage||100|V|
|IF(AV)<br>~~ee~~|Average Rectified Forward Current||200|mA|
|IFSM|Non−Repetitive Peak<br>Forward Surge<br>Current|Pulse Width =<br>1.0 s|1.0|A|
|||Pulse Width =<br>1.0 s|2.0||
|TSTG|Storage Temperature Range||−55 to + 150|°C|
|TJ<br>~~a~~|Operating Junction Temperature||150|°C|



Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 

## **CONNECTION DIAGRAM** 

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1201 3 3 1202<br>1 2<br>1203 3 3 1204<br>1 2 1 2<br>1205 3<br>1 2<br>**----- End of picture text -----**<br>


1. These ratings are based on a maximum junction temperature of 150 ° C. 

2. These are steady−state limits. ON Semiconductor should be consulted on applications involving pulsed or low−duty−cycle operations. 

## **THERMAL CHARACTERISTICS** 

Values are at TA = 25 ° C unless otherwise noted. **CASE 318−08SOT−23 Symbol Parameter Value Unit** PD Power Dissipation 350 mW **MARKING DIAGRAM** Derate Above 25 ° C 2.8 mW/ ° C R θ JA Thermal Resistance, 357 ° C/W 2xM Junction−to−Ambient ~~enn~~ 2x = Specific Device Code x = 4, 5, 6, 7, 8 M = Date Code = Pb−Free Package 

(Note: Microdot may be in either location) 

## **ORDERING INFORMATION** 

|**Device**|**Package**|**Shipping**†|
|---|---|---|
|MMBD1201,<br>MMBD1202,<br>MMBD1203,<br>MMBD1204,<br>MMBD1205|SOT−23<br>(Pb−Free<br>Halide Free)|3000 /<br>Tape & Reel|



- †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. 

Publication Order Number: **MMBD1202/D** 

**1** 

© Semiconductor Components Industries, LLC, 2001 **July, 2021 − Rev. 3** 

**MMBD1201 − MMBD1205** 

**ELECTRICAL CHARACTERISTICS** Values are at TA = 25 ° C unless otherwise noted. 

|**ELECTRICAL**|**CHARACTERISTICS**Values are at TA= 25°C|unless otherwise noted.||||
|---|---|---|---|---|---|
|**Symbol**|**Parameter**|**Conditions**|**Min.**|**Max.**|**Unit**|
|VR|Breakdown Voltage|IR= 100�A|100|−|V|
|VF|Forward Voltage|IF= 1.0 mA|550|600|mV|
|||IF= 10 mA|660|740|mV|
|||IF= 100 mA|820|920|mV|
|||IF= 200 mA|0.87|1.0|V|
|||IF= 300 mA|−|1.1|V|
|IR|Reverse Current|VR= 20 V|−|25|nA|
|||VR= 50 V|−|50|nA|
|||VR= 50 V, TA= 150°C|−|100|�A|
|CT|Total Capacitance|VR= 0 V, f = 1.0 MHz|−|2.0|pF|
|trr|Reverse Recovery Time|IF= IR= 10 mA, IRR= 1.0 mA,<br>RL= 100�|−|4.0|ns|



Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 

## **TYPICAL PERFORMANCE CHARACTERISTICS** 

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150 TA = 25 ° C 300 TA = 25 ° C<br>250<br>140<br>200<br>130<br>150<br>100<br>120<br>50<br>110 0<br>1 2 3 5 10 20 30 50 100 10 20 30 50 70 100<br>IR, Reverse Current ( � A) VR, Reverse Voltage (V)<br>, Reverse Voltage (V)<br>R , Reverse Current (nA)<br>V IR<br>**----- End of picture text -----**<br>


**Figure 1. Reverse Voltage vs. Reverse Current VR @ IR = 1.0 to 100 � A** 

**Figure 2. Reverse Current vs. Reverse Voltage IR @ VR = 10 to 100 V** 

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**2** 

**MMBD1201 − MMBD1205** 

## **TYPICAL PERFORMANCE CHARACTERISTICS** (continued) 

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T A  = 25 ° C TA = 25 ° C<br>700<br>450<br>650<br>400<br>600<br>350<br>550<br>300<br>500<br>250<br>450<br>1 2 3 5 10 20 30 50 100 0.1 0.2 0.3 0.5 1 2 3 5 10<br>IF, Forward Current ( � A) IF, Forward Current (mA)<br>Figure 3. Forward Voltage vs. Forward Current Figure 4. Forward Voltage vs. Forward Current<br>VF @ IF = 1.0 to 100  � A VF @ IF = 0.1 to 10 mA<br>1.3<br>TA = 25 ° C TA = 25 ° C<br>1.4<br>1.2 1.2<br>1.0<br>1.1<br>0.8<br>0 1.0<br>10 20 30 50 100 200 300 500 0 2 4 6 8 10 12 14<br>IF, Forward Current (mA) Reverse Voltage (V)<br>Figure 5. Forward Voltage vs. Forward Current Figure 6. Total Capacitance vs. Reverse Voltage<br>VF @ IF = 10 to 800 mA<br>4.0 400<br>TA = 25 ° C<br>3.5<br>300<br>3.0<br>2.5 200 IP(AV), Average Rectified Current (mA)<br>2.0<br>100<br>1.5<br>1.0 0<br>10 20 30 40 50 60 0 50 100 150<br>Reverse Current (mA) TA, Ambient Temperature ( � C)<br>, Forward Voltage (mV)F , Forward Voltage (mV)F<br>V V<br>, Forward Voltage (V)<br>F<br>V Total Capacitance (pF)<br>Current (mA)<br>Reverse Recovery Time (ns)<br>**----- End of picture text -----**<br>


**Figure 7. Reverse Recovery Time vs. Reverse Current** 

**Figure 8. Average Rectified Current (IF(AV)) vs. Ambient Temperature (TA)** 

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**3** 

**MMBD1201 − MMBD1205** 

## **TYPICAL PERFORMANCE CHARACTERISTICS** (continued) 

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500<br>400<br>300<br>200<br>SOT−23 P kg<br>100<br>0<br>0 50 100 150 200<br>IO, Average Temperature ( � C)<br>, Power Dissipation (mW)<br>D<br>P<br>**----- End of picture text -----**<br>


**Figure 9. Power Derating Curve** 

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**4** 

MECHANICAL CASE OUTLINE **PACKAGE DIMENSIONS** 

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SOT−23 (TO−236)<br>CASE 318−08<br>ISSUE AS<br>2 DATE 30 JAN 2018<br>SCALE 4:1<br>D NOTES:<br>1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.<br>2. CONTROLLING DIMENSION: MILLIMETERS.<br>3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH.<br>0.25 MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF<br>“a 3 t = THE BASE MATERIAL.<br>| E HE T 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH,PROTRUSIONS, OR GATE BURRS.<br>1 2<br>MILLIMETERS INCHES<br>DIM MIN NOM MAX MIN NOM MAX<br>L A 0.89 1.00 1.11 0.035 0.039 0.044<br>3X b L1 A1b 0.010.37 0.060.44 0.100.50 0.0000.015 0.0020.017 0.0040.020<br>e VIEW C c 0.08 0.14 0.20 0.003 0.006 0.008<br>TOP VIEW D 2.80 2.90 3.04 0.110 0.114 0.120<br>E 1.20 1.30 1.40 0.047 0.051 0.055<br>e 1.78 1.90 2.04 0.070 0.075 0.080<br>L 0.30 0.43 0.55 0.012 0.017 0.022<br>A L1 0.35 0.54 0.69 0.014 0.021 0.027<br>H E 2.10 2.40 2.64 0.083 0.094 0.104<br>= T 0 ° −−− 10 ° 0 ° −−− 10 °<br>a A1 SIDE VIEW SEE VIEW C c<br>GENERIC<br>END VIEW<br>MARKING DIAGRAM*<br>RECOMMENDED<br>SOLDERING FOOTPRINT XXXM<br>1<br>2.90 i 0.903X XXX = Specific Device Code oo<br>M = Date Code<br>= Pb−Free Package<br>LO | cr ,<br>*This information is generic. Please refer to<br>3X 0.80 a) LL 0.95 device data sheet for actual part marking.<br>PITCH Pb−Free indicator, “G” or microdot “ ”, |<br>DIMENSIONS: MILLIMETERS may or may not be present.<br>STYLE 1 THRU 5: STYLE 6: STYLE 7: STYLE 8:<br>CANCELLED PIN 1. BASE PIN 1. EMITTER PIN 1. ANODE<br>2. EMITTER 2. BASE 2. NO CONNECTION<br>3. COLLECTOR 3. COLLECTOR 3. CATHODE<br>STYLE 9: STYLE 10: STYLE 11: STYLE 12: STYLE 13: STYLE 14:<br>PIN 1. ANODE PIN 1. DRAIN PIN 1. ANODE PIN 1. CATHODE PIN 1. SOURCE PIN 1. CATHODE<br>2. ANODE 2. SOURCE 2. CATHODE 2. CATHODE 2. DRAIN 2. GATE<br>3. CATHODE 3. GATE 3. CATHODE−ANODE 3. ANODE 3. GATE 3. ANODE<br>STYLE 15: STYLE 16: STYLE 17: STYLE 18: STYLE 19: STYLE 20:<br>PIN 1. GATE PIN 1. ANODE PIN 1. NO CONNECTION PIN 1. NO CONNECTION PIN 1. CATHODE PIN 1. CATHODE<br>2. CATHODE 2. CATHODE 2. ANODE 2. CATHODE 2. ANODE 2. ANODE<br>3. ANODE 3. CATHODE 3. CATHODE 3. ANODE 3. CATHODE−ANODE 3. GATE<br>STYLE 21: STYLE 22: STYLE 23: STYLE 24: STYLE 25: STYLE 26:<br>PIN 1. GATE PIN 1. RETURN PIN 1. ANODE PIN 1. GATE PIN 1. ANODE PIN 1. CATHODE<br>2. SOURCE 2. OUTPUT 2. ANODE  2. DRAIN  2. CATHODE  2. ANODE<br>3. DRAIN 3. INPUT 3. CATHODE  3. SOURCE  3. GATE  3. NO CONNECTION<br>STYLE 27: STYLE 28:<br>PIN 1. CATHODE PIN 1. ANODE<br> 2. CATHODE  2. ANODE<br> 3. CATHODE  3. ANODE<br>Electronic versions are uncontrolled except when accessed directly from the Document Repository.<br>DOCUMENT NUMBER: 98ASB42226B Printed  versions are uncontrolled  except when stamped  “CONTROLLED COPY” in red.<br>DESCRIPTION: SOT−23 (TO−236) PAGE 1 OF 1<br>aes<br>ON Semiconductor and          are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.<br>ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding<br>the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically<br>disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the<br>rights of others.<br>**----- End of picture text -----**<br>


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© Semiconductor Components Industries, LLC, 2019 

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