MMBD1203.

## **Is Now Part of** 

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**==> picture [39 x 9] intentionally omitted <==**

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July 2015<br>**----- End of picture text -----**<br>


**MMBD1201 / MMBD1202 / MMBD1203 / MMBD1204 / MMBD1205 Small Signal Diodes** 

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**----- Start of picture text -----**<br>
Connection Diagram<br>1201 3 3 1202<br>3 1 2NC 1NC 2<br>1203                                       12043 3<br>2 1 2 1 2<br>1205 3<br>F<br>1<br>SOT-23 1 2<br>**----- End of picture text -----**<br>


## **Ordering Information** 

|**Part Number**|**Top Mark**|**Package**|**Packing Method**|
|---|---|---|---|
|MMBD1201|24|SOT-23 3L|Tape and Reel|
|MMBD1202|25|SOT-23 3L|Tape and Reel|
|MMBD1203|26|SOT-23 3L|Tape and Reel|
|MMBD1204|27|SOT-23 3L|Tape and Reel|
|MMBD1205|28|SOT-23 3L|Tape and Reel|



## **Absolute Maximum Ratings**[(1), (2)] 

Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only. Values are at TA = 25°C unless otherwise noted. 

|**Symbol**|**Parameter**|**Parameter**|**Value**|**Unit**|
|---|---|---|---|---|
|VRRM|Maximum Repetitive Reverse Voltage||100|V|
|IF(AV)|Average Rectified Forward Current||200|mA|
|IFSM|Non-Repetitive Peak Forward<br>Surge Current|Pulse Width = 1.0 second|1.0|A|
|||Pulse Width = 1.0 microsecond|2.0||
|TSTG|Storage Temperature Range||-55 to +150|°C|
|TJ|Operating Junction Temperature||150|°C|



## **Notes:** 

1. These ratings are based on a maximum junction temperature of 150 ° C. 

2. These are steady-state limits. Fairchild Semiconductor should be consulted on applications involving pulsed or low-duty-cycle operations. 

© 2001 Fairchild Semiconductor Corporation 

www.fairchildsemi.com 

MMBD1201 / MMBD1202 / MMBD1203 / MMBD1204 / MMBD1205 Rev. 1.7 

## **Thermal Characteristics** 

Values are at TA = 25°C unless otherwise noted. **Symbol Parameter Value Unit** Power Dissipation 350 mW PD Derate Above 25 ° C 2.8 mW/ ° C R θ JA Thermal Resistance, Junction-to-Ambient 357 ° C/W ~~—_———~~ 

## **Electrical Characteristics** 

Values are at TA = 25°C unless otherwise noted. 

|**Symbol**|**Parameter**|**Conditions**|**Min.**|**Max.**|**Unit**|
|---|---|---|---|---|---|
|VR|Breakdown Voltage|IR= 100μA|100||V|
|VF|Forward Voltage|IF= 1.0 mA|550|600|mV|
|||IF= 10 mA|660|740|mV|
|||IF= 100 mA|820|920|mV|
|||IF= 200 mA|0.87|1.0|V|
|||IF= 300 mA||1.1|V|
|IR<br>~~————=—=~~|Reverse Current<br>~~————=—=~~|VR= 20 V<br>~~————=—=~~|~~————=—=~~|25<br>~~————=—=~~|nA<br>~~————=—=~~|
|||VR= 50 V<br>~~————=—=~~|~~————=—=~~|50<br>~~————=—=~~|nA<br>~~————=—=~~|
|||VR= 50 V, TA= 150°C<br>~~————=—=~~|~~————=—=~~|100<br>~~————=—=~~|μA<br>~~————=—=~~|
|CT<br>~~————=—=~~|Total Capacitance<br>~~————=—=~~|VR= 0, f = 1.0 MHz<br>~~————=—=~~|~~————=—=~~|2.0<br>~~————=—=~~|pF<br>~~————=—=~~|
|trr<br>~~————=—=~~|Reverse Recovery Time<br>~~————=—=~~|IF= IR= 10 mA, IRR= 1.0 mA,<br>RL= 100Ω<br>~~————=—=~~|~~————=—=~~|4.0<br>~~————=—=~~|nS<br>~~————=—=~~|



© 2001 Fairchild Semiconductor Corporation 

www.fairchildsemi.com 

MMBD1201 / MMBD1202 / MMBD1203 / MMBD1204 / MMBD1205 Rev. 1.7 

2 

## **Typical Performance Characteristics** 

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**----- Start of picture text -----**<br>
150 Ta= 25  C ° 300 Ta= 25  C °<br>Too es<br>250<br>140 PL eee ee er<br>200<br>Pt E T yTt eea<br>130 ee atilll 150 Po]<br>100<br>120 ee<br>50<br>eat amen eet<br>110 ee 0 [|]<br>1              2          3           5              10             20       30        50            100 10                              20                30                      50            70             100<br>Reverse Current, IR [uA] Reverse Voltage, VR [V]<br>Figure 1. Reverse Voltage vs. Reverse Current Figure 2. Reverse Current vs. Reverse Voltage<br>BV @ IR = 1.0 to 100  μ A IR @ VR = 10 to 100 V<br>Ta= 25  C ° Ta= 25  C °<br>700<br>450<br>ce 650 eee<br>400 ri a peal<br>a a Hf [fet]<br>600<br>350<br>a a eeene<br>—_ wed HTT 550 2<br>300<br>ene 500 Peet tt<br>250 AneSoZ| 450 a<br>1               2        3           5              10             20       30         50            100 0.1          0.2       0.3        0.5             1               2        3           5              10<br>Forward Current, IF [uA] Forward Current, IF [mA]<br>Figure 3. Forward Voltage vs. Forward Current Figure 4. Forward Voltage vs. Forward Current<br>VF @ IF = 1.0 to 100  μ A VF @ IF = 0.1 to 10  m A<br>Ta= 25  C ° 1.3 Ta= 25  C °<br>1.4<br>re HH<br>| | Te rE se<br>1.2 PT TP 1.2 a<br>| A POEEEE<br>1.0 Reel ea<br>1.1<br>ee POPES rrr<br>0.8<br>Pee ==<br>0.6 eeeeeee 1.0 4}a ft<br>10              20       30         50             100            200     300        500 0 2 4 6 8 10 12 14<br>Forward Current, IF [mA] Reverse Voltage [V]<br> [V]  [nA]<br>Reverse Voltage, V    R Reverse Current, I    R<br> [mV]  [mV]<br>Forward Voltage, V    F Forward Voltage, V      F<br> [V]<br>      F<br>Total Capacitance [pF]<br>Forward Voltage, V<br>**----- End of picture text -----**<br>


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Figure 5. Forward Voltage vs. Forward Current<br>VF @ IF = 10 to 800 mA<br>**----- End of picture text -----**<br>


**Figure 6. Total Capacitance vs. Reverse Voltage** 

© 2001 Fairchild Semiconductor Corporation 

www.fairchildsemi.com 

MMBD1201 / MMBD1202 / MMBD1203 / MMBD1204 / MMBD1205 Rev. 1.7 

3 

## **Typical Performance Characteristics** (Continued) 

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4.0 Ta= 25  C ° 400<br>a es ee<br>3.5<br>P| | | ff | tf ft 300 ee ee ee<br>3.0<br>2.5 FERRER 200 a<br>2.0 SSeS Seee ee eee<br>100<br>1.5<br>1.0 }}—F $f 0 ee—<br>10 20 30 40 50 60 0 50 100 150<br>Reverse Current [mA] Ambient Temperature, TA [  C] °<br>Figure 7. Reverse Recovery Time vs. Reverse Current  Figure 8. Average Rectified Current (IF(AV)) vs.<br>Ambient Temperature (TA)<br>500 fr | | ft<br>400<br>en<br>300 ee<br>Pr | KOE ft ft ft ft<br>SOT-23 Pkg<br>200100 ee<br>a eeeeee<br>0 PoE EN<br>0 50 100 150 200<br>Average Temperature, IO [  C] °<br>I<br>F(AV) - AVERAGE RECTIFIED CURRENT - mA<br>Current [mA]<br>Reverse Recovery Time [nS]<br> [mW]<br>Power Dissipation, P     D<br>**----- End of picture text -----**<br>


**Figure 7. Reverse Recovery Time vs. Reverse Current** 

**Figure 9. Power Derating Curve** 

© 2001 Fairchild Semiconductor Corporation MMBD1201 / MMBD1202 / MMBD1203 / MMBD1204 / MMBD1205 Rev. 1.7 

www.fairchildsemi.com 

4 

## **Physical Dimensions** 

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0.95<br>2.92±0.20<br>3<br>1.40<br>1.30 [+0.20] 2.20<br>ane -0.15 ato<br>1 2<br>(0.29) 0.60<br>0.37<br>0.95<br>0.20 A B 1.00<br>ea 1.90 1.90 ff<br>LAND PATTERN<br>RECOMMENDATION<br>1.20 MAX SEE DETAIL A<br>(0.93) 0.10<br>0.00<br>0.10 C<br>C<br>2.40±0.30<br>NOTES: UNLESS OTHERWISE SPECIFIED<br>GAGE PLANE<br>   A)  REFERENCE JEDEC REGISTRATION<br>TO-236, VARIATION AB, ISSUE H.<br>0.23    B)  ALL DIMENSIONS ARE IN MILLIMETERS.<br>0.08    C)  DIMENSIONS ARE INCLUSIVE OF BURRS,<br>0.25        MOLD FLASH AND TIE BAR EXTRUSIONS.<br>   D)  DIMENSIONING AND TOLERANCING PER<br>       ASME Y14.5M - 1994.<br>0.20 MIN SEATING    E)  DRAWING FILE NAME: MA03DREV10<br>fi (0.55) ts PLANE<br>SCALE: 2X<br>Figure 10. 3-LEAD, SOT23, JEDEC TO-236, LOW PROFILE<br>**----- End of picture text -----**<br>


© 2001 Fairchild Semiconductor Corporation MMBD1201 / MMBD1202 / MMBD1203 / MMBD1204 / MMBD1205 Rev. 1.7 

www.fairchildsemi.com 

5 

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## **PRODUCT STATUS DEFINITIONS** 

## **Definition of Terms** 

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|||
|---|---|
|Datasheet Identification|Product Status|
|Advance Information|Formative / In Design|
|Preliminary|First Production|
|No Identification Needed|Full Production|
|Obsolete|Not In Production|

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Rev. I75 

© Fairchild Semiconductor Corporation 

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