MMBD101LT1G

## MBD101G, MMBD101LT1G 

## Schottky Barrier Diodes 

Designed primarily for UHF mixer applications but suitable also for use in detector and ultra−fast switching circuits. Supplied in an inexpensive plastic package for low−cost, high−volume consumer requirements. Also available in Surface Mount package. 

## **Features** 

## **www.onsemi.com** 

- Low Noise Figure − 6.0 dB Typ @ 1.0 GHz 

## **SILICON SCHOTTKY BARRIER DIODES** 

- Very Low Capacitance − Less Than 1.0 pF 

- High Forward Conductance − 0.5 V (Typ) @ IF = 10 mA 

- These Devices are Pb−Free and are RoHS Compliant 

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MARKING<br>DIAGRAMS<br>**----- End of picture text -----**<br>


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MAXIMUM RATINGS<br>**----- End of picture text -----**<br>


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MAXIMUM RATINGS TO−92 2−Lead<br>CASE 182 MBD<br>Rating Symbol Value Unit STYLE 1 101<br>Reverse Voltage VR 7.0 V 1 AYW<br>2 2 1<br>Forward Power Dissipation PF<br>TA = 25 ° C MBD101 280 mW CATHODE ANODE<br>MMBD101LT1 225<br>Derate above 25 ° C MBD101 2.2 mW/ ° C<br>MMBD101LT1 1.8<br>Junction Temperature TJ +150 ° C 3 SOT−23 (TO−236)CASE 318<br>Storage Temperature Range Tstg −55 to +150 ° C 1 STYLE 8 4M M<br>in 7<br>Stresses exceeding those listed in the Maximum Ratings table may damage the 2<br>device. If any of these limits are exceeded, device functionality should not be n 3 e 1 1<br>assumed, damage may occur and reliability may be affected. CATHODE ANODE<br>(Pin 2 Not Connected)<br>**----- End of picture text -----**<br>


**ELECTRICAL CHARACTERISTICS** (TA = 25 ° C unless otherwise noted) A = Assembly Location ~~es~~ **Characteristic Symbol Min Typ Max Unit** Y = Year Reverse Breakdown Voltage V(BR)R 7.0 10 − V W = Work Week (IR = 10 A) 4M = Device Code (SOT−23) ~~ee~~ M = Date Code* ~~rr~~ Diode Capacitance C ~~es~~ D − 0.88 1.0 pF = Pb−Free Package (VR = 0, f = 1.0 MHz, (Note: Microdot may be in either location) Note 1, page 2) ~~po~~ *Date Code orientation and/or overbar may Forward Voltage VF − 0.5 0.6 V vary depending upon manufacturing location. (IF = 10 mA) ~~po~~ **ORDERING INFORMATION** Reverse Leakage IR − 0.02 0.25 A (VR = 3.0 V) **Device Package Shipping**[†] Product parametric performance is indicated in the Electrical Characteristics for MBD101G TO−92 5000 Units / Box (Pb−Free) the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. MMBD101LT1G SOT−23 3000 / Tape & Reel (Pb−Free) ~~re eee =~~ †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. 

Publication Order Number: **MBD101/D** 

**1** 

© Semiconductor Components Industries, LLC, 1994 **October, 2016 − Rev. 4** 

**MBD101G, MMBD101LT1G** 

## **TYPICAL CHARACTERISTICS** 

(TA = 25 ° C unless noted) 

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1.0 100<br>0.7<br>0.5 VR = 3.0 V TA = 85°C<br>0.2 10<br>0.1 TA = -40°C<br>0.07<br>0.05 1.0 TA = 25°C<br>0.02<br>0.01 0.1<br>30 40 50 60 70 80 90 100 110 120 130 0.3 0.4 0.5 0.6 0.7<br>TA, AMBIENT TEMPERATURE (°C) VF, FORWARD VOLTAGE (VOLTS)<br>�<br>, REVERSE LEAKAGE (   A) , FORWARD CURRENT (mA)<br>IR IF<br>**----- End of picture text -----**<br>


**Figure 1. Reverse Leakage** 

**Figure 2. Forward Voltage** 

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1.0<br>0.9<br>0.8<br>0.7<br>0.6<br>0 1.0 2.0 3.0 4.0<br>VR, REVERSE VOLTAGE (VOLTS)<br>CD,CAPACITANCE (pF)<br>**----- End of picture text -----**<br>


**Figure 3. Capacitance** 

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11<br>10 LOCAL OSCILLATOR FREQUENCY = 1.0 GHz<br>9.0 (TEST CIRCUIT IN FIGURE 5)<br>8.0<br>7.0<br>6.0<br>5.0<br>4.0<br>3.0<br>2.0<br>1.0<br>0.1 0.2 0.5 1.0 2.0 5.0 10<br>PLO, LOCAL OSCILLATOR POWER (mW)<br>NF, NOISE FIGURE (dB)<br>**----- End of picture text -----**<br>


**Figure 4. Noise Figure** 

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LOCAL<br>OSCILLATOR<br>UHF DIODE IN<br>NOISE SOURCE TUNED<br>H.P. 349A MOUNT<br>NOISE IF AMPLIFIER<br>FIGURE METER NF = 1.5 dB<br>H.P. 342A f = 30 MHz<br>**----- End of picture text -----**<br>


## **NOTES ON TESTING AND SPECIFICATIONS** 

- Note 1 — CD is measured using a capacitance bridge (Boonton Electronics Model 75A or equivalent). 

- Note 2 — Noise figure measured with diode under test in tuned diode mount using UHF noise source and local oscillator (LO) frequency of 1.0 GHz. The LO power is adjusted for 1.0 mW. IF amplifier NF = 1.5 dB, f = 30 MHz, see Figure 5. 

- Note 3 — LS is measured on a package having a short instead of a die, using an impedance bridge (Boonton Radio Model 250A RX Meter). 

**Figure 5. Noise Figure Test Circuit** 

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**2** 

**MBD101G, MMBD101LT1G** 

## **PACKAGE DIMENSIONS** 

## **TO−92 TWO LEAD** 

TO−226AC CASE 182−06 ISSUE L 

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A<br>B<br>R<br>SEATING<br>PLANE<br>D<br>P L<br>K ÉÉ J<br>ÉÉ<br>SECTION X−X<br>X X<br>D<br>G<br>H<br>V<br>C<br>1 2 N<br>N<br>**----- End of picture text -----**<br>


NOTES: 

1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 

2. CONTROLLING DIMENSION: INCH. 

3. CONTOUR OF PACKAGE BEYOND ZONE R IS UNCONTROLLED. 

4. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM. 

|**DIM**|**INCHES**|**INCHES**|**MILLIMETERS**|**MILLIMETERS**|
|---|---|---|---|---|
||**MIN**|**MAX**|**MIN**|**MAX**|
|**A**<br>**B**|0.175<br>0170|0.205<br>0210|4.45<br>432|5.21<br>533|
|**C**|.<br>0.125|.<br>0.165|.<br>3.18|.<br>4.19|
|**D**|0016|0021|0407|0533|
|**G**|.<br>.<br>0.050 BSC||.<br>.<br>1.27 BSC||
|**H**<br>|0.100 BSC<br><br>||2.54 BSC<br><br>||
|**J**|0.014|0.016|0.36|0.41|
|**K**|0.500|---|12.70|---|
|**L**|0.250|---|6.35|---|
|**N**|0.080|0.105|2.03|2.66|
|**P**|---|0.050|---|1.27|
|**R**|0.115|---|2.93|---|
|**V**|0.135|---|3.43|---|
|STYL<br>PI|E 1:<br>N 1. ANODE<br>2. CATHODE||||



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**3** 

**MBD101G, MMBD101LT1G** 

## **PACKAGE DIMENSIONS** 

**SOT−23 (TO−236)** CASE 318−08 ISSUE AR 

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D NOTES:<br>1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.<br>2. CONTROLLING DIMENSION: MILLIMETERS.<br>3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH.<br>0.25 MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF<br>Tt 3 , - THE BASE MATERIAL.<br>E HE T 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH,PROTRUSIONS, OR GATE BURRS.<br>1 2<br>co ; MILLIMETERS INCHES<br>DIM MIN NOM MAX MIN NOM MAX<br>L A 0.89 1.00 1.11 0.035 0.039 0.044<br>3X b L1 A1b 0.010.37 0.060.44 0.100.50 0.0000.015 0.0020.017 0.0040.020<br>e VIEW C c 0.08 0.14 0.20 0.003 0.006 0.008<br>TOP VIEW D 2.80 2.90 3.04 0.110 0.114 0.120<br>E 1.20 1.30 1.40 0.047 0.051 0.055<br>e 1.78 1.90 2.04 0.070 0.075 0.080<br>L 0.30 0.43 0.55 0.012 0.017 0.022<br>A L1 0.35 0.54 0.69 0.014 0.021 0.027<br>H E 2.10 2.40 2.64 0.083 0.094 0.104<br>T 0 ° −−− 10 ° 0 ° −−− 10 °<br>oe A1 SIDE VIEW SEE VIEW C RY c STYLE 8:<br>END VIEW PIN 1. ANODE<br>2. NO CONNECTION<br>3. CATHODE<br>**----- End of picture text -----**<br>


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RECOMMENDED<br>SOLDERING FOOTPRINT*<br>**----- End of picture text -----**<br>


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3X<br>2.90 r o 0.90<br>L oO\cr<br>3X 0.80 | LL 0.95<br>PITCH<br>DIMENSIONS: MILLIMETERS<br>**----- End of picture text -----**<br>


*For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. 

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**MBD101/D** 

**4**