MJE5852G

Bipolar (BJT) Single Transistor, PNP, 400 V, 8 A, 80 W, TO-220AB, Through Hole

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Manufacturer: ONSEMI
Product type: Single Bipolar Junction Transistors - BJT
Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:400V; Transition Frequency ft:-; Power Dissipation Pd:80W; DC Collector Current:8A; DC Current Gain hFE:15hFE; Transistor Case Style:
MSL: -
SVHC: Lead (25-Jun-2025)
No. of Pins: 3Pins
Product Range: MJxxxx
Qualification: -
Power Dissipation: 80W
Transistor Mounting: Through Hole
Transistor Polarity: PNP
Transition Frequency: -
Transistor Case Style: TO-220AB
DC Current Gain hFE Min: 15hFE
Operating Temperature Max: 150°C
Continuous Collector Current: 8A
Collector Emitter Voltage Max: 400V

Delivery and price
Units per pack	1000
Price	1.55 €
Current stock	1000+
Lead time	7 days

Datasheet

Updated at March 22, 2026