MJE5731G

Bipolar (BJT) Single Transistor, PNP, 350 V, 1 A, 40 W, TO-220, Through Hole

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Manufacturer: ONSEMI
Product type: Single Bipolar Junction Transistors - BJT
Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:-350V; Transition Frequency ft:10MHz; Power Dissipation Pd:40W; DC Collector Current:-1A; DC Current Gain hFE:10hFE; Transi
MSL: -
SVHC: Lead (25-Jun-2025)
No. of Pins: 3Pins
Product Range: -
Qualification: -
Power Dissipation: 40W
Transistor Mounting: Through Hole
Transistor Polarity: PNP
Transition Frequency: 10MHz
Transistor Case Style: TO-220
DC Current Gain hFE Min: 10hFE
Operating Temperature Max: 150°C
Continuous Collector Current: 1A
Collector Emitter Voltage Max: 350V

Delivery and price
Units per pack	5000
Price	0.42 €
Current stock	100+
Lead time	7 days

Datasheet

Updated at March 14, 2026