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MJE350G

Bipolar (BJT) Single Transistor, General Purpose, PNP, 300 V, 500 mA, 20 W, TO-225AA, Through Hole

  • Manufacturer: ONSEMI
  • Product type: Single Bipolar Junction Transistors - BJT
  • Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:300V; Transition Frequency ft:-; Power Dissipation Pd:20W; DC Collector Current:500mA; DC Current Gain hFE:240hFE; Transistor Case Styl
  • MSL: -
  • SVHC: Lead (25-Jun-2025)
  • No. of Pins: 3Pins
  • Product Range: MJxxxx
  • Qualification: -
  • Power Dissipation: 20W
  • Transistor Mounting: Through Hole
  • Transistor Polarity: PNP
  • Transition Frequency: -
  • Transistor Case Style: TO-225AA
  • DC Current Gain hFE Min: 240hFE
  • Operating Temperature Max: 150°C
  • Continuous Collector Current: 500mA
  • Collector Emitter Voltage Max: 300V
Delivery and price
Units per pack 5000
Price 0.298 €
Current stock 500+
Lead time 7 days

Updated at March 14, 2026