MJE15035G

Bipolar (BJT) Single Transistor, PNP, 350 V, 4 A, 50 W, TO-220, Through Hole

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Manufacturer: ONSEMI
Product type: Single Bipolar Junction Transistors - BJT
Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:-350V; Transition Frequency ft:30MHz; Power Dissipation Pd:50W; DC Collector Current:-4A; DC Current Gain hFE:10hFE; Transistor Ca
MSL: -
SVHC: Lead (25-Jun-2025)
No. of Pins: 3Pins
Product Range: -
Qualification: AEC-Q101
Power Dissipation: 50W
Transistor Mounting: Through Hole
Transistor Polarity: PNP
Transition Frequency: 30MHz
Transistor Case Style: TO-220
DC Current Gain hFE Min: 10hFE
Operating Temperature Max: 150°C
Continuous Collector Current: 4A
Collector Emitter Voltage Max: 350V

Delivery and price
Units per pack	5000
Price	0.534 €
Current stock	500+
Lead time	7 days

Datasheet

Updated at March 14, 2026