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MJD5731T4G

Bipolar (BJT) Single Transistor, PNP, 350 V, 1 A, 15 W, TO-252 (DPAK), Surface Mount

  • Manufacturer: ONSEMI
  • Product type: Single Bipolar Junction Transistors - BJT
  • Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:-350V; Transition Frequency ft:10MHz; Power Dissipation Pd:15W; DC Collector Current:-1A; DC Current Gain hFE:10hFE; Transistor Ca
  • MSL: MSL 1 - Unlimited
  • SVHC: Lead (25-Jun-2025)
  • No. of Pins: 3Pins
  • Product Range: MJxxxx
  • Qualification: AEC-Q101
  • Power Dissipation: 15W
  • Transistor Mounting: Surface Mount
  • Transistor Polarity: PNP
  • Transition Frequency: 10MHz
  • Transistor Case Style: TO-252 (DPAK)
  • DC Current Gain hFE Min: 10hFE
  • Operating Temperature Max: 150°C
  • Continuous Collector Current: 1A
  • Collector Emitter Voltage Max: 350V
Delivery and price
Units per pack 5000
Price 0.217 €
Current stock 1000+
Lead time 7 days

Updated at March 14, 2026