Illustrative purposes only
MJD45H11-1G
Bipolar (BJT) Single Transistor, PNP, 80 V, 8 A, 20 W, TO-251, Through Hole
⚠️ Given the current worldwide supply chain situation, we kindly ask you to take the information shown as a guideline.
- Manufacturer: ONSEMI
- Product type: Single Bipolar Junction Transistors - BJT
- Product variants: No other variants available. No other names.
- No. of Pins: 3Pins
- Qualification: AEC-Q101
- Power Dissipation: 20W
- DC Current Gain hFE: 40hFE
- Transistor Mounting: Through Hole
- Transistor Polarity: PNP
- Transition Frequency: 90MHz
- Transistor Case Style: TO-251
- DC Current Gain hFE Min: 40hFE
- Operating Temperature Max: 150°C
- Continuous Collector Current: 8A
- Collector Emitter Voltage Max: 80V
| Delivery and price | |
|---|---|
| Units per pack | 500 |
| Price | 0.703 € |
| Current stock | 165 |
| Lead time | 7 days |