Illustrative purposes only
MJD112-1G
Bipolar (BJT) Single Transistor, NPN, 100 V, 2 A, 20 W, TO-251, Through Hole
⚠️ Given the current worldwide supply chain situation, we kindly ask you to take the information shown as a guideline.
- Manufacturer: ONSEMI
- Product type: Single Bipolar Junction Transistors - BJT
- Product variants: No other variants available. No other names.
- No. of Pins: 3Pins
- Qualification: AEC-Q101
- Power Dissipation: 20W
- DC Current Gain hFE: 200hFE
- Transistor Mounting: Through Hole
- Transistor Polarity: NPN
- Transition Frequency: 25MHz
- Transistor Case Style: TO-251
- DC Current Gain hFE Min: 200hFE
- Operating Temperature Max: 150°C
- Continuous Collector Current: 2A
- Collector Emitter Voltage Max: 100V
| Delivery and price | |
|---|---|
| Units per pack | 500 |
| Price | 0.663 € |
| Current stock | 4 |
| Lead time | 7 days |