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MJB41CT4G
Bipolar Transistor Array, NPN, 100 V, 6 A, 65 W
⚠️ Given the current worldwide supply chain situation, we kindly ask you to take the information shown as a guideline.
- Manufacturer: ONSEMI
- Product type: Bipolar Junction Transistor Arrays - BJT
- Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:100V; Power Dissipation Pd:65W; DC Collector Current:6A; DC Current Gain hFE:15hFE; Transistor Case Style:TO-263; No. of Pins:3Pin
- MSL: MSL 1 - Unlimited
- SVHC: Lead (25-Jun-2025)
- No. of Pins: 3Pins
- Product Range: -
- Qualification: -
- Transistor Mounting: Surface Mount
- Transistor Polarity: NPN
- Power Dissipation NPN: 65W
- Power Dissipation PNP: -
- Transistor Case Style: TO-263 (D2PAK)
- Transition Frequency NPN: 3MHz
- Transition Frequency PNP: -
- Operating Temperature Max: 150°C
- DC Current Gain hFE Min NPN: 15hFE
- DC Current Gain hFE Min PNP: -
- Continuous Collector Current NPN: 6A
- Continuous Collector Current PNP: -
- Collector Emitter Voltage Max NPN: 100V
- Collector Emitter Voltage Max PNP: -
| Delivery and price | |
|---|---|
| Units per pack | 250 |
| Price | 0.646 € |
| Current stock | 1000+ |
| Lead time | 7 days |
Datasheet
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Updated at March 20, 2026