MJ802G

Bipolar (BJT) Single Transistor, NPN, 90 V, 30 A, 200 W, TO-204, Through Hole

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Manufacturer: ONSEMI
Product type: Single Bipolar Junction Transistors - BJT
Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:90V; Transition Frequency ft:2MHz; Power Dissipation Pd:200W; DC Collector Current:30A; DC Current Gain hFE:25hFE; Transistor Case
MSL: -
SVHC: Lead (25-Jun-2025)
No. of Pins: 2Pins
Product Range: -
Qualification: AEC-Q101
Power Dissipation: 200W
Transistor Mounting: Through Hole
Transistor Polarity: NPN
Transition Frequency: 2MHz
Transistor Case Style: TO-204
DC Current Gain hFE Min: 25hFE
Operating Temperature Max: 200°C
Continuous Collector Current: 30A
Collector Emitter Voltage Max: 90V

Delivery and price
Units per pack	250
Price	3.58 €
Current stock	200+
Lead time	7 days

Datasheet

Updated at March 14, 2026