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MJ4502G

Bipolar (BJT) Single Transistor, General Purpose, PNP, 100 V, 30 A, 200 W, TO-204AA, Through Hole

  • Manufacturer: ONSEMI
  • Product type: Single Bipolar Junction Transistors - BJT
  • Transistor Polarity:P Channel; Collector Emitter Voltage V(br)ceo:100V; Transition Frequency ft:2MHz; Power Dissipation Pd:200W; DC Collector Current:30A; DC Current Gain hFE:100hFE; Transistor
  • MSL: -
  • SVHC: Lead (25-Jun-2025)
  • No. of Pins: 2Pins
  • Product Range: -
  • Qualification: -
  • Power Dissipation: 200W
  • Transistor Mounting: Through Hole
  • Transistor Polarity: PNP
  • Transition Frequency: 2MHz
  • Transistor Case Style: TO-204AA
  • DC Current Gain hFE Min: 100hFE
  • Operating Temperature Max: 200°C
  • Continuous Collector Current: 30A
  • Collector Emitter Voltage Max: 100V
Delivery and price
Units per pack 250
Price 3.61 €
Current stock 5
Lead time 7 days
PDF File icon Datasheet

Updated at March 6, 2026