MJ15025

S 46 FARRAND STREET ificati = BLOOMFIELD, NEW JERSEY 07003 www.solidstateinc.com Product Specification nnnnn 

## Silicon PNP Power Transistors 

## MJ15023 MJ15025 

## a) 

## DESCRIPTION 

- + With TO-3 package 

- Complement to type MJ15022; MJ15024 

- Excellent safe operating area 

- High DC current gain 

## APPLICATIONS 

- Designed for high power audio, disk head positioners and other linear applications 

|PIN|DESCRIPTION|
|---|---|
|1|Base|
|2|Emitter|
|3|Collector|



**==> picture [134 x 61] intentionally omitted <==**

**----- Start of picture text -----**<br>
- 2<br>ae 2<br>**----- End of picture text -----**<br>


Fig.1 simplified outline (TO-3) and symbol 

## Absolute maximum ratings(Ta=‘C) 

|SYMBOL||PARAMETER|CONDITIONS|VALUE||UNIT|
|---|---|---|---|---|---|---|
||||MJ15023|-350|||
|Veso||Collector-base voltage|Open emitter|||V|
||||MJ15025|-400|||
|VcEo||Collector-emitter voltage|Open base|||Vv|
|VEBO||Emitter-base voltage|Open collector|||Vv|
|Tj||Junction temperature||150|||cc|
|THERMAL||CHARACTERISTICS|||||
|SYMBOL||||PARAMETER|MAX|||UNIT|
|Rihy-c|||Thermalresistancejunction|tocase|0.70||‘CW|



## THERMAL CHARACTERISTICS 

= 46 FARRAND STREET ificati = BLOOMFIELD, NEW JERSEY 07003 www.solidstateinc.com Product Specification nnereree eee ee ee ee ee eee ee e **e** erence nceee ee ea Silicon PNP Power Transistors MJ15023 MJ15025 a 0 OG A A 

## CHARACTERISTICS 

**==> picture [486 x 426] intentionally omitted <==**

**----- Start of picture text -----**<br>
|||||||||||
|---|---|---|---|---|---|---|---|---|---|
|Tj=25°C|unless|otherwise|specified|
|SYMBOL|PARAMETER|CONDITIONS|UNIT|
|ollector-emitter|
|Vceosus)|sustaining|voltage|Ic=-0.1A_|yejle=0|Vv|
|MJ15025|-250|
|Veesat-1|Collector-emitter|saturation voltage|||Ic=-8A;|Ip=-0.8A|Pf|aa ||Vv|
|Veksat2|Collector-emitter saturation|voltage|||Ic=-16A;|Ip=-3.2A|er|Vv|
|Vee|Base-emitter|on|voltage|Ic=-8A; Vce=-4V|||||-2.2|Vv|
|MJ15023|||Vce=-150V;|la=0|
|||Collector|05|mA|
|CEO|cut-off|current|
|MJ15025|=||Vce=-200V;|!g=0|
|MJ15023|||Vce=-200V;|Vee(otn=-1.5V|
|||Collector|-0.25|mA|
|CEX|cut-off current|||ee|
|MJ15025|||Vce=-250V;|Vee(on=-1.5V|||
|leBo|Emiter cutoff current|versio|||||ft|||mA|
|Dre|DC current|gain|Ic=-8A;|VcE=-4V|1|||||oo|||
|Nre.2|DC|current|gain|Ic=-16A|
|>|Vce=-4V|Ps]|of|
|||Second|breakdown|collector|Vce=-50Vdc,t=0.5|s,|-5.0|A|
|s/b|current|with|base|forward|biased|Vce=-80Vdc,t=0.5|s, Nonrepetitive|~2.0|
|Cos|Output capacitance|le=0|; Vop=-10V;f=1.0MHz|||||600|||pF|
|fr|Transition frequency|Ic=-1A) Voce=-10V;f=1.0MHz|pet|||MHz|

**----- End of picture text -----**<br>


2d 

= SOLID STATE INC. =) 46[BLOOMFIELD,] FARRAND STREET[ NEW][ JERSEY][ 07003] 

Product Specification ¢: . 

wwwsolidstateinc.com 

MJ15023 MJ15025 

## Silicon PNP Power Transistors 

## PACKAGE OUTLINE 

**==> picture [354 x 349] intentionally omitted <==**

**----- Start of picture text -----**<br>
Lu<br>of<br>f<br>ee<br>Lu 2 22. 2285MAX<br>aan Bowlle og fo<br>Fr 0,986~1:082 ap 42<br>ey a<br>| 3,B4~4,21 AN “Ebs<br>¢o Oy TE<br>FS. “ mo lN<br>a =16.89-~)<br>| 29.90~30.40-m)<br>**----- End of picture text -----**<br>