MJ15022

& 46 FARRAND STREET | BLOOMFIELD, NEW JERSEY 07003 **a** 

if; i n Product Specificatio 

www.solidstateinc.com 

## Silicon NPN Power Transistors 

## MJ15022 MJ15024 

## EES] 

## DESCRIPTION 

- + With TO-3 package 

- Complement to type MJ15023; MJ15025 

- Excellent safe operating area 

- High DC current gain Nee = 15 (Min) @ Ic = 8 Adc 

## APPLICATIONS 

- Designed for high power audio, disk head positioners and other linear applications 

## PINNING(see Fig.2) 

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PIN DESCRIPTION ee ol<br>j Base<br>a<br>2| Emitter<br>3 Collector Fig.1 simplified outline (TO-3) and symbol<br>**----- End of picture text -----**<br>


## Absolute maximum ratings(Ta=‘C) 

|SYMBOL||PARAMETER|CONDITIONS|VALUE||UNIT|
|---|---|---|---|---|---|---|
|Vcgo||Collector-base voltage|Open emitter|||Vv|
|VceEo|||Collector-emittervoltage|Open base|||V|
|Veo||Emitter-base voltage|Open collector|||Vv|
|Pp||Total power dissipation|Tc=25°C|||W|
|T,|||Junction temperature||150||c|
|Tstg||Storagetemperature||-65~200|||Cc|



## THERMAL CHARACTERISTICS 

|SYMBOL|PARAMETER|UNIT|
|---|---|---|
|Rithj-c|Thermalresistancejunctiontocase|“CW|



& 46 FARRAND STREET = BLOOMFIELD, NEW JERSEY 07003 www.solidstateinc.com 

ifi ; Product Specification 

rrtA, Silicon NPN Power Transistors MJ15022 MJ15024 

## ikG 

## CHARACTERISTICS 

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|||||||||||
|---|---|---|---|---|---|---|---|---|---|
|Tj=25°C|unless|otherwise|specified|
|SYMBOL|PARAMETER|CONDITIONS|mn|| rye, ||max ||UNIT|
|ollector-emitter|
|Vceoisus)|sustaining|voltage|Ic=0.1A_|ajle=0|V|
|MJ15024|250|
|Vocesat-1|Collector-emitter|saturation voltage|||Ic=8A;|Is=0.8A|Sf|||ta ||Vv|
|Veesat-2|Collector-emitter|saturation voltage|| Ic=16A;|Is=3.2A|fF|||40 ||V|
|Vee|Base-emitter on voltage|Ic=8A; Vce=4V|||||22|||Vv|
|colect|
|ceo|ollector|MJ15022|| Voe=150V:|la=0|||
|cut-off current|||0.8|mA|
|||MJ15024|||Vce=200V:|Ip=0|||
|Collect|
|Icex|ollector|MJ15022|| Vce=200V;|Veeom=1.5V|||||
|cut-off|current|0.25|mA|
|MJ15024|||Vce=250V;|Veeon=1.5V|
|leBo|Emitter cut-off current|Vee=5V;|Ic=0|P||||os|||mA|
|Nre-2|DC current gain|Ic=16A; Vce=4V|Ps fo}|
|||Second|breakdown|collector|Voe=50Vdc,t=0.5|s,|5.0|A|
|sib|current with|base|forward|biased|Vce=80Vdc,t=0.5|s,Nonrepetitive|2.0|
|Cos|Output capacitance|le=0|; Vep=10V;f=1.0MHz|fo|500|pF|
|fr|Transition frequency|Ic=1A; Vce=10V;f=1.0MHz|a}|||||MHz|

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S SOLID STATE INC. ay 46BLOOMFIEL FARRAN **D** , STREET NEW JERSEY 07003 www.solidstateinc.com 

Product Speci **fi** cation; 

at 

MJ15022 MJ15024 

## Silicon NPN Power Transistors 

## PACKAGE OUTLINE 

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Fig.2 outline dimensions (unindicated tolerance:+ 0.1mm)