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This product is RoHS compilant

MJ11015G

Bipolar (BJT) Single Transistor, PNP, 120 V, 30 A, 200 W, TO-3, Through Hole

  • Manufacturer: ONSEMI
  • Product type: Single Bipolar Junction Transistors - BJT
  • Product variants: No other variants available. No other names.
  • No. of Pins: 2Pins
  • Power Dissipation: 200W
  • DC Current Gain hFE: 1000hFE
  • Transistor Mounting: Through Hole
  • Transistor Polarity: PNP
  • Transistor Case Style: TO-3
  • DC Current Gain hFE Min: 1000hFE
  • Operating Temperature Max: 200°C
  • Continuous Collector Current: 30A
  • Collector Emitter Voltage Max: 120V
Delivery and price
Units per pack 50
Price 8.16 €
Current stock 418
Lead time 7 days