Illustrative purposes only
MJ11012G
Bipolar (BJT) Single Transistor, Darlington, NPN, 60 V, 30 A, 200 W, TO-204AA, Through Hole
⚠️ Given the current worldwide supply chain situation, we kindly ask you to take the information shown as a guideline.
- Manufacturer: ONSEMI
- Product type: Single Bipolar Junction Transistors - BJT
- Product variants: No other variants available. No other names.
- No. of Pins: 2Pins
- Power Dissipation: 200W
- DC Current Gain hFE: 1000hFE
- Transistor Mounting: Through Hole
- Transistor Polarity: NPN
- Transistor Case Style: TO-204AA
- DC Current Gain hFE Min: 1000hFE
- Operating Temperature Max: 200°C
- Continuous Collector Current: 30A
- Collector Emitter Voltage Max: 60V
Delivery and price | |
---|---|
Units per pack | 50 |
Price | 7.75 € |
Current stock | 24 |
Lead time | 7 days |