MJ11012

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SOLID STATE INC.<br>46 FARRAND STREET<br>BLOOMFIELD, NEW JERSEY 07003 www.solidstateinc.com<br>eee eee eeee ee eee ee eee eee eeeee ee eee eee ee aS<br>COMPLEMENTARY SILICON POWER rs<br>DARLINGTON TRANSISTORS PNP NPN<br>MJ11011 MJ11012<br>.. designed for use as output devices in complementary general MJ11013 MJ11014<br>purpose amplifier applications. MJ11015 MJ11046<br>FEATURES: eee<br>* High Gain Darlington Performance ee<br>* High DC Current Gain hFE = 1000(Min) @ |, = 20A 30 AMPERE<br>Monolithic Construction with Built-in Base-Emitter Shunt Resistor COMPLEMENTARY<br>SILICON POWER<br>DARLINGTON TRANSISTOR<br>MAXIMUM RATINGS 60-120 VOLTS<br>200 WATTS<br>Characteristic Symbol | MJ11011 | MJ11013 |MJ411015 | Unit ee<br>MJ11012 |MJ11014 |MJ11016<br>Collector-Emitter Voltage 60 90 | 120 Vv<br>COllector-Base Voitage 60 | 90 120 Vv 3)<br>Emitter-Base Voltage | r=<br>Collector Current-Continuous A TO-3 |<br>-Peak —<br>a<br>Total [Power] [Dissipation] [@T,.=] [25°C] ;200 Ww _—D ceF  G<br>Derate above— 25°C Po 1.15 wrc L___—_- . |<br>Operating and Storage Junction Ty .1s1¢ °C pt<br>cn rn ve |<br>Temperature Range - 65 to +200 I a —<br>THERMAL CHARACTERISTICS ae@) (Ke|<br>Pe EMITTER<br>COLLECTOR(CASE)<br>200 FIGURE -1 POWER DERATING MILLIMETERS:<br>_Gif IS] [| | tT tT Ty DIM MIN | MAX<br>Sip + PX] fT ft ft 7 A | 3875 | 30.96<br>= a ; 28<br>Ziof_| | KR] | fT Tt © | 795 | oz<br>E 100+++ D fate | 1219<br>Aiea es E | 220 | 2607<br>Geol | | | |TNT e | 1m | se | |<br>so, | | | | | [IN | | ef90 aee.<br>é ot | | T T tT tT TX J | 388 | 436<br>0 2 50 To7 , TEMPERATURE(*C)100 125 150 175 200 K [10.67| 11.18<br>**----- End of picture text -----**<br>


|a|MJ11011, MJ11013,MJ11015 PNP/MJ11012,|MJ11011, MJ11013,MJ11015 PNP/MJ11012,|/MJ11012, MJ11014, MJ11016NPN<br>I|/MJ11012, MJ11014, MJ11016NPN<br>I|/MJ11012, MJ11014, MJ11016NPN<br>I|
|---|---|---|---|---|---|
|ELECTRICAL CHARACTERISTICS (|T,, = 25°C unless otherwise noted )|||||
|feharactritio<br>| symbot | min<br>| max<br>| unt||||||
|OFF CHARACTERISTICS||||||
|Collector - Emitter Sustaining Voltage (1)<br>(le<br>= 100 mA, I, =0)|MJ11011,MJ11012<br>MJ11013,MJ11014|Veeo(sus)|60<br>90||Vv|
||MJ11015,MJ11016||120|||
|Collector Cutoff Current|||||mA|
|(Veg<br>= 50 V, I, = 0.0)||||||
|Collector-Emitter Leakage Current|||||mA|
|(Veg = 60V,R,,= 1.0k ohm<br>)|MJ11011,MJ11012||1.0|||
|( Veg = 90V,R,.= 1.0k ohm<br>)|MJ11013,MJ11014||1.0|||
|(Vo,g= 120V,R,.= 1.0kchm<br>)<br>(Veg= 60V,R,, = 1.0kohm ,T, = 125°C <br>(Veg= 90 V,Rg= 1.0kohm , T, =125°C <br>(Veg = 120 V,Rgg = 1.0kohm,T, =125°C|MJ11015,MJ11016<br> ) MJ11011,MJ11012<br> ) MJ11013,MJ11014<br> ) MJ11015,MJ11016||1.0<br>5.0<br>5.0<br>5.0|||
|Emitter Cutoff Current|||||mA|
|(Veg = 5.0V,I,=0 )||||||
|ON CHARACTERISTICS (1)||||||
|DC Current Gain||hFE||||
|(1, =20A, VV. = 5.0V)<br>(l, =30A, V,, =5.0V)|||1000<br>200|||
|Collector-Emitter Saturation Voltage<br>(I,<br>=20A, I, = 200 mA)<br>(I,<br>= 30A, I,<br>= 300 mA)||Voetsat)|||V|
|Base-Emitter Saturation Voltage<br>(1,<br>=20A, |, = 200 mA)<br>(I,<br>=30A, I,<br>= 300 mA)<br>)||Vae(saty|||V|
|DYNAMIC CHARACTERISTICS||||||
|Small-Signal Current Gain||||||
|(l_e=10A, Voge = 3.0 V, f = 1.0 MHz )||||||
|(1) Pulse Test: Pulse width =300 us , Duty Cycle = 2.0%<br>(2)f,= hy.<br>°Frest||||||
||INTERNAL SCHEMATIC|DIAGRAM||||
|NPN<br>Collector||PNP|Collector<br>0|||
|MJ11011<br>as ire<br>MJ11013||MJ11012<br>MJ11014|rn)|Ole||
|MJ11015<br>Base O—<br>H<br>locket<br>i<br>'<br>I<br>1<br>LOSE TTT||MJ11016|07 oF<br>Leelee<br>LT<br>'<br>\<br>I<br>!<br>LOSI IT|||
|Emitter|||Emitier|||



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MJ11011,13,15 PNP / MJ11012,14,16 NPN<br>eee eeeeeeeee ee ee eee ee ee ee ee ee ea a aS<br>OC CURRENT GAIN SMALL-SIGNAL CURRENT GAIN<br>eR a<br>Er - 0 CTF SEO<br>ot teeee @ SSN<br>5 2 se <A $ —— — __---- ==<br>en ee 0 gE ee<br>Per IN SR<br>Qo ete 3 oo fit| | PN<br>EER OE SER<br>nolL]03 O08 O7 10 20Pt30 ETE50 70 10 20 30 otf10 20 | Titi50 100 yy200 500ET1k<br>fc , COLLECTOR CURRENT (AMP) {, FREQUENCY (kHz)<br>"ON" VOLTAGES "ON" VOLTAGES<br>5 aPNP MJ14011,MJ11013,MJ1101 ET 6 NPN MJ11012,MJ41014,MJ11016 PiU<br>Tu 7<br>_ SElimeees PEE<br>a, ST oP EE e- eeeTUfT 7<br>3 AH 21 tTTa<br>gj) tii Pe et TETE<br>g a |W STE TT Pete @teteroo LETT OA || |<br>> eee pez > Pear 7<br>a ae LE tees LU TT<br>pH PL eee<br>oo | LITT EET Te AsA<br>01 02 05 10 20 50 10 20 50 "Of (02 05 10 20 6.0 10 20 50<br>IC , COLLECTOR CURRENT (AMP) IC , COLLECTOR CURRENT (AMP)<br>**----- End of picture text -----**<br>


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ACTIVE-REGION SAFE OPERATING AREA (SOA)<br>80}<br>at tt There are two limitation on the power handling ability<br>$ 40L | ET of a transistor:average junction temperature and second<br>s 5— breakdown safe operating area curves indicate lc-Vee<br>§ Po limits ofthe transistor that must be observed for reliable<br>© 2TH OTT operation ie., the transistor must not be subjected to<br>g [0s] the=__.= _Bondng [Seoere]  Wire [Bronkcnwn]  Lint [Unit] ———| JVeaNi greaterThe data dissipation of SOA than curves curve: is baseindicate. on T 4ypg=200 °C;Te is<br>8 aT,eeC (Sings Pulse) Pot oaAaAS variable depending on conditions. second breakdown<br>i 02 rt TL IVININ _| pulse limits are valid for duty cycles to 10% provided<br>8 0.4== T.uypS200°C,At high case temperatures, thermal limita -<br>3 nealSSS MuioIsMitio1gBe t+ tionless will than reduce the limitati nsthe p o wer imposed by second that can be handled breakdown. to values<br>aot mei 1 Hitt |<br>Vee, COLLECTOR EMITTER VOLTAGE (VOLTS)<br>**----- End of picture text -----**<br>