MJ10015

Se 46 FARRAND STREET BLOOMFIELD, NEW JERSEY 07003 www.solidstateinc.com 

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eeeeeeeeeeessecece creeeee SWITCHMODE SERIES NPN SILICON POWER DARLINGTON TRANSISTORS WITH BASE-EMITTER SPEEDUP DIODE The MJ10015 and MJ10016 darlington transistors are designed 

for high-voltage, high-speed, power switching in inductive circuits where fall time is critical. They are particularly suited for line oper -ated switch-mode applications such as: FEATURES: 

*Continuous Collector Current - |, = 50A 

*Switching Regulators 

*Inverters 

*Solenoid and Relay Drivers *Motor Controls 

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eeeeee<br>NPN<br>MJ10015<br>MJ10016<br>-_—_——__—<br>50 AMPERE<br>POWER DARLINGTON<br>TRANSISTORS<br>400-500 VOLTS<br>“eo se 250 WATTS<br>**----- End of picture text -----**<br>


## MAXIMUM RATINGS 

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Collector-Emitter Voltage [Veeowun | 400 | S00 |v \w¥<br>Collector Current-Continuous 50 A<br>-Peak 75 TO-3<br>aTotal DO :<br>Power Dissipation @T,=25°C Ww c 4<br>Derate above 25°C @T,= 100°C wrcWwW >,t+ F =6<br>Operating and Storage Junction Ty Ts °C H<br>Temperature Range - 65 to +200 !<br>J ™" =]<br>3<br>NN“<br>THERMAL CHARACTERISTICS CHARACTERISTICS vy 2 x | E<br>PIN 1.BASE<br>2.EMITTER<br>COLLECTOR(CASE)<br>250 FIGURE -1 POWER DERATING<br>oepms IST TTTT an| Max]<br>~_ |N [TfpT B | 192 | 22<br>s [we]  A aS A <1 3575 | oo88<br>SSyst2 yf _|| || [XT[| KTfTTTTT cD || 11.18796 || 12.19923<br>e ofpt+ + 1 tN tt E | 220 | 2807<br>; sof —_~ || |[| [|| of)[TX]KOTTT cH || 2980138 || 30.40162<br>pg a ee ee es | | 16.64 | 17.30<br>ep | | | [T TP fy TN J | 388 | 436<br>; 0 2 50 75 100 125 150 175 200 K | 10.67 _| 11.18<br>To , TEMPERATURE(°C) |<br>**----- End of picture text -----**<br>


## THERMAL CHARACTERISTICS CHARACTERISTICS 

MJ10015, MJ10016 NPN 

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|ELECTRICAL|CHARACTERISTICS|(|T,|=|25°C|unless|otherwise|noted|)|
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|OFF|CHARACTERISTICS|
|Collector|-|Emitter|Sustaining|Voltage|
|(lgc|=|100|mA,I,8|=|0, Vclamp=Rate|VCEO|)|MJ10015M10016|V,CEO(SUS)|500400|Vv|
|Collector|Cutoff|Current|
|( Voey=|Rated Value,|Vagiop_=1-5 V|)|mA|
|Emitter|Cutoff Current|mA|
|(Veg= 2.0V,|i, =0)|
|ON|CHARACTERISTICS|(1)|
|DC|Current|Gain|
|(le(lg =20A,=|40|A,|VegVog ==|5.05.0 V)V)|
|Collector|- Emitter Saturation Voltage|Vezisat)|Vv|
|(Ig|
|(lg|=252|0|A,A,|Iplg|=|1|.0A)0A)|
|Base - Emitter Saturation Voltage|Veg;sat)|Vv|
|(lg =|20A,|p=|1.0A)|2.75|
|Diode|Forward Voltage|Ve|Vv|
|(lp = 20A)|
|DYNAMIC|CHARACTERISTICS|
|Output Capacitance|Cop|pF|
|(Veg=10 V,|1-=0,|f =100|kHz|)|750|
|SWITCHING|CHARACTERISTICS|
|RiseTime|||tg|t0AVpemesov|«||ot||||ts|
|tp=2susouycyte sow|||te|||||25|||os|||
|(1)|Pulse|Test:|Pulse width|= 300|ys|,|Duty|Cycle|S|2.0%|ee|

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MJ10015, MJ10016 NPN 

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FIG-2 DC CURRENT GAIN 

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FIG-3 COLLECTOR EMITTER SATURATION VOLTAGE<br>**----- End of picture text -----**<br>


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‘0 Soo eee “TTT TT LTT ay<br>ee ee. a ee eee ee cli loflg=10 Bail | VW<br>Co NET VA<br>Lee tii o T TTECV<br>éUe LtlA mill _\ L ]}]3 12HEE cA<br>2. cl :<br>- ——2.TN) etereet<br>ae i at<br>cc oe ee ee i Ho i dS<br>lc , COLLECTOR CURRENT (AMP) tC , COLLECTOR CURRENT (AMP)<br>FIG-4 OUTPUT CAPACITANCES FIG-S BASE- EMITTER SATURATION VOLTAGE<br>a “HA<br>PS | es a Yu<br>roleHNT oeet tH tttTintower ttFHT od |<br>wool TTTPOSS MN e PTE EE LL A,<br>aC ISS ra an 2 S<br>3 Pate eu ftTe<br>: 200STOTTTTLETTEOSAOCeiEnnnhs7 <KH rr ateelte — Lt<br>:TLLE LIP Se<br>04 | Aautil So<br>10 20 50 10 20 50 100 200 400 05 1.0 20 50 10 20 50<br>Va, REVERSE VOLTAGE(VOLTS) iC , COLLECTOR CURRENT (AMP)<br>FIG-6 COLLECTOR CUT-OFF REGION<br>SS<br>Nee 800<br>a a a A<br>=<br>Pt t25%e TY<br>B sol Ot<br>é ene — fron<br>———————<br>ol | | TT TUT TT fT 7 4<br>02 0 +02 40.4 +06 +0.8<br>Vez, BASE EMITTER VOLTAGE (VOLTS)<br>**----- End of picture text -----**<br>


MJ10015 , MJ10016nnyNPN 

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FIG-7 FORWARD BIAS SAFE OPERATING AREA [FORWARD BIAS __|<br>0 EF Sr cet or FAH There are. two limitation on the power handling ability<br>E | TTS lin man of a transistor:average junction temperature and second<br>g 10 |Se| all Bal breakdown safe operating area curves indicate Ie-Vce<br>3 = a limits of the transistor that must be observed for reliable<br>© SEES ESE (00 Ht EE operation i.e., the transistor must not be subjected to<br>& 291.0(— tt| TTT AKTNUT -{-EMJ10015EtHil greaterThe data dissipationof FIG-7 than curvesis base onindicate.T.=25 °C;T seg isvariable<br>PgsSS SS wiionis ==e depending on power fevel. second breakdown pulse limits<br>go Pet = EE are valid for duty cycles to 10% must be derate when<br>3 2! +t TSP Tc 225°C, Second breakdown limitations do not derate the<br>so 0.02==Of=—= —--———— T,#25°CBondingThermally Wire (SingleLimitedLimit Pulse) HTHooSSSEAae same as thermal limitations.<br>——— Second Breakdown Limited | CH<br>oe<br>0) =eS SSSreneeSSStHEeeNLT====<br>00§ EES<br>1 2 5 10 20 50 100 200 500<br>Vex , COLLECTOR EMITTER VOLTAGE (VOLTS)<br>FIG-8 REVERSE BIAS SAFE OPERATING AREA REVERSE BIAS|<br>50 Voi | Ft ~ LL] inust be sustainedFor inductivesimuttaneouslyloads, high voltageduring turn-off,and high incurrentmost<br>40 BOUNDARY FORM016 FIN | | | cases, with the base-to-emitter junction reverse biased<br>rg2 _ THE1S 100V LOCUS LESS FOR MJ10015 | ot | | aUndersafe theselevel conditionsat or below the collectora specfic voltagevalue must beof collector held to<br>& | | \ | | current. This can be accomplished by several mean such as<br>&3 30 || \ | activesafe levelclamping,for theseRC devicessnubbing,is specifiedload line shaping,as Reverseetc.Bias the<br>2 ft || fof TXT]| Safe Operating Area and5 represents the vokage-current.<br>86 20 ts P| | K [| ratingconditionis verifiedallowableunderduringclampedreverseconditionsbiased tum-off.so thatThisthe<br>9<br>Oo4> 10 | | _ Vv =5V| r | NE devicegives theis RBSOAnever subjectedharacteristics.. to. an avalanche mode. FIG-8<br>2 || Bete mw<br>Fe A=2<br>0 50 100 150 =—.200 250 300 = 350 400-450 500<br>Vee COLLECTOR-EMITTER VOLTAGE(VOLTS)<br>**----- End of picture text -----**<br>