![MG064S09A200DP — TVS Varistor, 6.4 V, 9 V, MultiGuard, 22 V, 0612 [1632 Metric], Multilayer Varistor (MLV)](/media/D/A/A/B438402ED72FDAAD.webp)
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MG064S09A200DP
TVS Varistor, 6.4 V, 9 V, MultiGuard, 22 V, 0612 [1632 Metric], Multilayer Varistor (MLV)
⚠️ Reference pricing provided. In case of supply shortages, we will connect you with our trusted procurement partners to ensure your project's continuity.
- Manufacturer: KYOCERA AVX
- Product type: TVS Varistors
- SVHC: No SVHC (17-Dec-2015)
- Product Range: MultiGuard
- Varistor Type: Multilayer Varistor (MLV)
- Voltage Rating VAC: 6.4V
- Voltage Rating VDC: 9V
- Varistor Case Style: 0612 [1632 Metric]
- Clamping Voltage Vc Max: 22V
- Peak Energy (10/1000uS): 100mJ
- Operating Temperature Max: 125°C
- Operating Temperature Min: -55°C
- Peak Surge Current @ 8/20µs: 30A
- Automotive Qualification Standard: -
| Delivery and price | |
|---|---|
| Units per pack | 1000 |
| Price | 0.604 € |
| Current stock | 10+ |
| Lead time | 30 days |
Datasheet
**MultiGuard (2&4 Elements) AVX Multilayer Ceramic Transient Voltage Suppression Arrays – ESD Protection for CMOS and Bi Polar Systems**
## **GENERAL DESCRIPTION** ~~wep ies—sS~~
AVX’s Transient Voltage Suppression (TVS) Arrays address six trends in today’s electronic circuits: (1) mandatory ESD protection, (2) mandatory EMI control, (3) signal integrity improvement, (4) PCB downsizing, (5) reduced component placement costs, and (6) protection from induced slow speed transient voltages and currents.
AVX’s MultiGuard products offer numerous advantages, which include a faster turn-on-time (<1nS), repetitive strike capability, and space savings. In some cases, MultiGuard consumes less than 75% of the PCB real estate required for the equivalent number of discrete chips. This size advantage, coupled with the savings associated with placing only one chip, makes MultiGuard the TVS component of choice for ESD protection of I/O lines in portable equipment and programming ports in cellular phones. Other applications include differential data line protection, ASIC protection and LCD driver protection for portable computing devices.
## **GENERAL CHARACTERISTICS**
- Operating Temperature: -55ºC to 125ºC
- Working Voltage: 5.6Vdc-18Vdc
- Case Size: 0405 2x Array 0508 2x Array 0612 4x Array
- Energy: 0.02-0.1J
## **FEATURES**
- Bi-Directional protection
- Very fast response time to ESD strikes
- EMI/RFI filtering in the off-state
- 2 and 4 element arrays
- Multiple lines protection
- Space saving
- Pick & place cost savings
## **APPLICATIONS**
- I/O Lines
- Portable equipment
- Cell phones, radios
- Programming ports
- Differential data lines
- ASIC
- LCD driver
- and more
- Peak Current: 15-30A
## **HOW TO ORDER**
**MG 04 2 L 14 A 300 T P** ~~to~~ qT Ty qT qT Ty ~~T T~~ **MultiGuard Case Configuration Style Working Energy Clamping Packaging Termination Size** 2 = 2 Elements S = Standard **Voltage Rating Voltage** (PCS/REEL) **Finish** 04 = 0405 4 = 4 Elements Construction 05 = 5.6VDC A = 0.10 Joules 150 = 18V D = 1,000 P = Ni/Sn 05 = 0508 L = Low 09 = 9.0VDC V = 0.02 Joules 200 = 22V R = 4,000 (Plated) 06 = 0612 Capacitance 14 = 14.0VDC X = 0.05 Joules 300 = 32V T = 10,000 18 = 18.0VDC 400 = 42V 500 = 50V
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## **MultiGuard (2&4 Elements) AVX Multilayer Ceramic Transient Voltage Suppression Arrays ESD Protection for CMOS and Bi Polar Systems**
|||**AVX**<br>**Part Number**<br>|<br>{|}|**AVX**<br>**Part Number**<br>|<br>{|}|**Working**<br>**Voltage**<br>**(DC)**<br>{|}|**Working **<br>**Voltage**<br>**(AC)**<br>{|}||**Breakdown**<br>**Voltage**<br>|<br>|]|**Clamping**<br>**Voltage**<br>|]|}|**Test**<br>**Current**<br>**For VC**<br>|}|**Maximum**<br>**Leakage**<br>**Current**<br>|}||**Transient**<br>**Energy**<br>**Rating**<br>|||**Peak**<br>**Current**<br>**Rating**<br>|ft|**Typical**<br>**Cap**<br>ft|
|---|---|---|---|---|---|---|---|---|---|---|---|
|**2 Element**<br>**0405 Chip**<br>|<br>~~ee~~|MG042S05X150 _ _<br>|<br>{|}<br>~~ee~~||5.6<br>{|}<br>~~ee~~|4.0<br>{|} |<br>~~ee~~|8.5±20%<br>|<br>|]<br>~~ee~~|18<br>|] |}<br>~~ee~~|1<br>|}<br>~~ee~~|35<br>|} |<br>~~ee~~|0.05<br>| |<br>~~ee~~|15<br>| ft<br>~~ee~~|300<br>ft<br>~~ee~~|
||MG042L14V400 _ _<br>~~ee~~||14.0<br>~~ee~~|10.0<br>~~ee~~|18.5±12%<br>~~ee~~|32<br>~~ee~~|1<br>~~ee~~|15<br>~~ee~~|0.02<br>~~ee~~|15<br>~~ee~~|45<br>~~ee~~|
||MG042L18V500 _ _<br>~~ee~~||18.0<br>~~ee~~|14.0<br>~~ee~~|28.0±10%<br>~~ee~~|50<br>~~ee~~|1<br>~~ee~~|10<br>~~ee~~|0.02<br>~~ee~~|15<br>~~ee~~|40<br>~~ee~~|
|**2 Element**<br>**0508 Chip**|MG052S05A150 _ _||5.6|4.0|8.5±20%|18|1|35|0.10|30|825|
||MG052S09A200 _ _||9.0|6.4|12.7±15%|22|1|25|0.10|30|550|
||MG052S14A300 _ _||14.0|10.0|19.5±12%|32|1|15|0.10|30|425|
||MG052S18A400 _ _||18.0|14.0|25.5±10%|42|1|10|0.10|30|225|
||MG052L18X500 _ _||≤18.0|≤14.0|28.0±10%|50|1|10|0.10|20|50|
|**4 Element**<br>**0612 Chip**|MG064S05A150 _ _||5.6|4.0|8.5±20%|18|1|35|0.10|30|825|
||MG064S09A200 _ _||9.0|6.4|12.7±15%|22|1|25|0.10|30|550|
||MG064S14A300 _ _||14.0|10.0|19.5±12%|32|1|15|0.10|30|425|
||MG064S18A400 _ _||18.0|14.0|25.5±10%|42|1|10|0.05|15|120|
||MG064L18X500 _ _||≤18.0|≤14.0|28.0±10%|50|1|10|0.10|20|75|
|||Termination Finish Code<br>Packaging Code||||||||||
Termination Finish Code
Packaging Code
VW (DC) DC Working Voltage (V) VW (AC) AC Working Voltage (V) VB Typical Breakdown Voltage (V @ 1mADC ) VB Tol VB Tolerance is ± from Typical Value
VC Clamping Voltage (V @ IVC ) IVC Test Current for VC (A, 8x20μS)
IL Maximum Leakage Current at the Working Voltage (μA) ET Transient Energy Rating (J, 10x1000μS) IP Peak Current Rating (A, 8x20μS) Cap Typical Capacitance (pF) @ 1MHz and 0.5 VRMS
## **COMPONENT LAYOUT**
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SIZE: 0405 SIZE: 0508<br>2 Element<br>it<br>**----- End of picture text -----**<br>
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SIZE: 0612<br>4 Element<br>Htit<br>**----- End of picture text -----**<br>
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## **MultiGuard (2&4 Elements) AVX Multilayer Ceramic Transient Voltage Suppression Arrays ESD Protection for CMOS and Bi Polar Systems**
## **PHYSICAL DIMENSIONS AND PAD LAYOUT**
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2-ELEMENT MULTIGUARD<br>W W<br>P P<br>S S S S<br>T T<br>BW CL OF CHIPC/L BW CL OF CHIPC/L<br>BL L BL L<br>SIZE: 0405 SIZE: 0508<br>**----- End of picture text -----**<br>
**0405 2 Element Dimensions mm (inches)**
**L W T BW BL P S** 1.00±0.15 1.37±0.15 0.66 MAX 0.36±0.10 0.20±0.10 064 REF 0.32±0.10 (0.039±0.006) (0.054±0.006) (0.026 MAX) (0.014±0.004) (0.008±0.004) (0.025 REF) (0.013±0.004)
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4-ELEMENT MULTIGUARD<br>W<br>X X<br>P S S<br>T<br>BW C/L OF CHIP<br>CL<br>BL<br>L<br>SIZE: 0612<br>0612 4 Element Dimensions mm (inches)<br>L W T BW BL P X S<br>1.60±0.20 3.20±0.20 1.22 MAX 0.41±0.10 0.18 +0.25-0.08 0.76 REF 1.14±0.10 0.38±0.10<br>(0.063±0.008) (0.126±0.008) (0.048 MAX) (0.016±0.004) (0.007 )+.010-.003 (0.030 REF) (0.045±0.004) (0.015±0.004)<br>**----- End of picture text -----**<br>
## **0508 2 Element Dimensions mm (inches)**
**L W T BW BL P S** 1.25±0.20 2.01±0.20 1.02 MAX 0.41±0.1 0.18 +0.25-0.08 0.76 REF 0.38±0.10 (0.049±0.008) (0.079±0.008) (0.040 MAX) (0.016±0.004) (0.007 )+.010-.003 (0.030 REF) (0.015±0.004)
## **Pad Layout Dimensions**
## **mm (inches)**
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E<br>D<br>A B C D E A<br>0405 2 Element C B<br>0.46 0.74 1.20 0.38 0.64<br>(0.018) (0.029) (0.047) (0.015) (0.025)<br>E<br>D<br>A B C D E A<br>B<br>0508 2 Element C<br>0.89 1.27 2.16 0.46 0.76<br>(0.035) (0.050) (0.085) (0.018) (0.030)<br>**----- End of picture text -----**<br>
## **Pad Layout Dimensions**
**mm (inches)**
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E<br>D<br>A B C D E A<br>0612 4 Element B<br>0.89 1.65 2.54 0.46 0.76 C<br>(0.035) (0.065) (0.100) (0.018) (0.030)<br>**----- End of picture text -----**<br>
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## **MultiGuard (2 & 4 Elements) AVX Multilayer Ceramic Transient Voltage Suppression Arrays ESD Protection for CMOS and Bi Polar Systems**
## **TYPICAL PERFORMANCE CURVES – VOLTAGE/CURRENT CHARACTERISTICS**
Multilayer construction and improved grain structure result in excellent transient clamping characteristics in excess of 30 amps (20 amps on MG064L18X500) peak current while maintaining very low leakage currents under DC operating
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5.6V<br>25<br>20<br>15<br>10<br>5<br>0<br>10 [-9] 10 [-6] 10 [-3] 10 [+0] 10 [+3]<br>Current (A)<br>MG064S05A150<br> 18V<br>100<br>80<br>60<br>40<br>20<br>0<br>10 [-9] 10 [-6] 10 [-3] 10 [+0] 10 [+3]<br>Current (A)<br>MG064S18A400<br>Voltage (V)<br>Voltage (V)<br>**----- End of picture text -----**<br>
conditions. The VI curves below show the voltage/current characteristics for the 5.6V, 9V, 14V and 18V parts with currents ranging from fractions of a micro amp to tens of amps.
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9.0V and 14.0V<br>50<br>40<br>30<br>20<br>10<br>0<br>10 [-9] 10 [-6] 10 [-3] 10 [+0] 10 [+3]<br>Current (A)<br>MG064S09A200 MG064S14A300<br>MG064L18X500<br>70<br>60<br>50<br>40<br>30<br>20<br>10<br>10 [-9] 10 [-6] 10 [-3] 10 [+0] 10 [+3]<br>Current (A)<br>MG064L18X500<br>Voltage (V)<br>Voltage (V)<br>**----- End of picture text -----**<br>
## **TYPICAL PERFORMANCE CURVES – TEMPERATURE CHARACTERISTICS**
MultiGuard suppressors are designed to operate over the full temperature range from -55°C to +125°C.
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Temperature Dependence of Voltage<br>100<br>90<br>80<br>70<br>60<br>50<br>40<br>30<br>20<br>10<br>10 [-9] 10 [-8] 10 [-7] 10 [-6] 10 [-5] 10 [-4] 10 [-3] 10 [-2]<br>Current (A)<br>-40 C 25 C 85 C 125 C<br>Voltage as a Percent of<br>Average Breakdown Voltage<br>**----- End of picture text -----**<br>
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TYPICAL BREAKDOWN AND CLAMPING VOLTAGES<br>VS TEMPERATURE - 5.6V<br>20<br>VC<br>15<br> 5.6V<br>10 VB<br>5<br>-55 -40 -20 0 20 40 60 80 100 120 140 150<br>Temperature ( C)o<br>B<br>C<br>Typical Breakdown (V )<br>and Clamping (V ) Voltages<br>**----- End of picture text -----**<br>
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TYPICAL ENERGY DERATING VS TEMPERATURE<br>1.25�<br>1.0�<br>0.8 �<br>0.6 �<br>0.4 �<br>0.2 [�]<br>0<br>-60 -40 -20 0 20 40 60 80 100 120 140 160<br>�Temperature ( C)o�<br>TYPICAL BREAKDOWN AND CLAMPING VOLTAGES<br>VS TEMPERATURE - 18V<br>50<br>40 ( )VC<br>18V<br>30 ( VB )<br>20<br>-55 -40 -20 0 20 40 60 80 100 120 140 150<br>Temperature ( C)o<br>Energy Derating<br>B<br>C<br>Typical Breakdown (V )<br>and Clamping (V ) Voltages<br>**----- End of picture text -----**<br>
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## **MultiGuard (2 & 4 Elements) AVX Multilayer Ceramic Transient Voltage Suppression Arrays ESD Protection for CMOS and Bi Polar Systems**
## **TRANSIENT VOLTAGE SUPPRESSORS – TYPICAL PERFORMANCE CURVES**
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MG064L18X500<br>eeeee ee<br>T E | ETPPTty ytET nn<br>Hi} | | Pt<br>MG064S18A400<br>HT FT TETE<br>MG064S14A300 MG064S09A200<br>f\<br>HT MG064S05A510<br>MN<br>0 100 200 ZN CAPACITANCE (pF) DISTRIBUTION300 400 AS 500 600 2am 700 800 900 1000<br>**----- End of picture text -----**<br>
## **APPLICATION**
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MUX BUS<br>Transmitter Receiver<br>14V - 18V 0.02J<br>**----- End of picture text -----**<br>
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KEYBOARD<br>74AHCT05 FERRITE<br>CONTROLLER<br>BEAD<br>DATA<br>14V - 18V 0.1J<br>74AHCT05 FERRITE<br>BEAD<br>CLOCK<br>14V - 18V 0.1J<br>**----- End of picture text -----**<br>
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Updated at April 26, 2026
KYOCERA AVX is a globally recognized leader in the design, development, and manufacturing of advanced electronic components. For over 50 years, the company has provided innovative solutions across the automotive, industrial, medical, military, consumer electronics, and communications markets. Supported by an extensive international network of research and production facilities, KYOCERA AVX is renowned for delivering highly reliable components that meet the stringent demands of modern engineering. The manufacturer's extensive portfolio is strongly anchored in high-performance passive components, with a particular emphasis on advanced capacitive solutions. Their offering features a comprehensive selection of polymer capacitors, RF capacitors, and supercapacitors engineered for demanding power and high-frequency requirements. This core lineup is further supported by a variety of film and aluminium electrolytic capacitors, alongside precision power inductors. Beyond passive components, KYOCERA AVX excels in robust circuit protection and discrete semiconductors. Their expertise in transient voltage suppression is demonstrated by a wide array of TVS varistors and TVS diodes, complemented by temperature-sensing NTC thermistors and reliable Schottky diodes. The product ecosystem is completed by precision timing devices, including crystals and resonators, as well as specialized RF antennas, providing engineers with a versatile and dependable foundation for next-generation technology.
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