Image not available
Illustrative purposes only
MDI145-12A3
IGBT Module, Single, 160 A, 2.2 V, 700 W, 125 °C, Y4-M5
⚠️ Reference pricing provided. In case of supply shortages, we will connect you with our trusted procurement partners to ensure your project's continuity.
- Manufacturer: IXYS SEMICONDUCTOR
- Product type: IGBT Modules
- No. of Pins: 5Pins
- IGBT Technology: NPT IGBT [Standard]
- IGBT Termination: Stud
- Power Dissipation: 700W
- IGBT Configuration: Single
- Transistor Mounting: Panel
- Transistor Polarity: N Channel
- DC Collector Current: 160A
- Power Dissipation Pd: 700W
- Transistor Case Style: Y4-M5
- Operating Temperature Max: 125°C
- Junction Temperature Tj Max: 125°C
- Continuous Collector Current: 160A
- Collector Emitter Voltage Max: 1.2kV
- Collector Emitter Voltage V(br)ceo: 1.2kV
- Collector Emitter Saturation Voltage: 2.2V
- Collector Emitter Saturation Voltage Vce(on): 2.2V
| Delivery and price | |
|---|---|
| Units per pack | 50 |
| Price | 42.21 € |
| Current stock | 10+ |
| Lead time | 30 days |
Datasheet
**MDI145-12A3** ## **IGBT (NPT) Module** **==> picture [108 x 54] intentionally omitted <==** **----- Start of picture text -----**<br> VCES = 1200 V<br>I C25 = 160 A<br>V = 2.2 V<br>CE(sat)<br>**----- End of picture text -----**<br> ## Buck Chopper + free wheeling Diode ## **Part number** MDI145-12A3 **==> picture [66 x 7] intentionally omitted <==** **----- Start of picture text -----**<br> Backside: isolated<br>**----- End of picture text -----**<br> **==> picture [89 x 100] intentionally omitted <==** **----- Start of picture text -----**<br> 1<br>7<br>6<br>3<br>Ar 2<br>**----- End of picture text -----**<br> ## **Features / Advantages:** - NPT IGBT technology - low saturation voltage - low switching losses - switching frequency up to 30 kHz - square RBSOA, no latch up - high short circuit capability - positive temperature coefficient for easy parallelling - MOS input, voltage controlled - ultra fast free wheeling diodes ## **Applications:** - AC motor drives - Solar inverter - Medical equipment - Uninterruptible power supply - Air-conditioning systems - Welding equipment - Switched-mode and resonant-mode power supplies - Inductive heating, cookers - Pumps, Fans ## **Package:** Y4 - Isolation Voltage: V~3600 - Industry standard outline - RoHS compliant - Soldering pins for PCB mounting - Base plate: DCB ceramic - Reduced weight - Advanced power cycling IXYS reserves the right to change limits, conditions and dimensions. Data according to IEC 60747and per semiconductor unless otherwise specified 20131206a © 2013 IXYS all rights reserved **MDI145-12A3** |Symbol<br>Definition<br>Ratings<br>typ.<br>max.<br>min.<br>Conditions<br>Unit<br>**Free Wheeling Diode FWD**|Symbol<br>Definition<br>Ratings<br>typ.<br>max.<br>min.<br>Conditions<br>Unit<br>**Free Wheeling Diode FWD**|Symbol<br>Definition<br>Ratings<br>typ.<br>max.<br>min.<br>Conditions<br>Unit<br>**Free Wheeling Diode FWD**|Symbol<br>Definition<br>Ratings<br>typ.<br>max.<br>min.<br>Conditions<br>Unit<br>**Free Wheeling Diode FWD**|Symbol<br>Definition<br>Ratings<br>typ.<br>max.<br>min.<br>Conditions<br>Unit<br>**Free Wheeling Diode FWD**|Symbol<br>Definition<br>Ratings<br>typ.<br>max.<br>min.<br>Conditions<br>Unit<br>**Free Wheeling Diode FWD**| |---|---|---|---|---|---| |Symbol<br>Definition<br>Conditions|||||| |VRSM<br>_max. non-repetitive reverse blocking voltage_<br>T = 25°C<br>VJ||||1200|V| |VRRM<br>_max. repetitive reverse blocking voltage_<br>T = 25°C<br>VJ||||1200|V| |IR<br>_reverse current, drain current_|V = V<br>R<br>T = 25°C<br>VJ<br>T = °C<br>VJ<br>V = V<br>R<br>1200<br>125<br>1200|||1<br>3|mA<br>mA| |V F<br>_forward voltage drop_|T = 25°C<br>VJ<br>I = A<br>F<br>100<br>I = A<br>F<br>200|||2.60<br>3.10|V<br>V| ||T = °C<br>VJ<br>I = A<br>F<br>100<br>I = A<br>F<br>200<br>125|||2.00<br>2.40|V<br>V| |I<br>FAV<br>_average forward current_|T = °C<br>C<br>80<br>T = °C<br>VJ<br>150<br>d =<br>DC current<br>1|||95|A| |VF0<br>T = °C<br>VJ<br>150<br>r F<br>_threshold voltage_<br>_slope resistance_<br>_for power loss calculation only_||||1.30<br>7.5|V<br>mΩ| |R<br>_thermal resistance junction to case_<br>thJC||||0.18|K/W| |R<br>_thermal resistance case to heatsink_<br>thCH|||0.18||K/W| |Ptot<br>T = 25°C<br>C<br>_total power dissipation_||||700|W| |IFSM<br>t = 10 ms; (50 Hz), sine;<br>T = 45°C<br>VJ<br>_max. forward surge current_<br>V = 0 V<br>R||||700|A| |CJ<br>_junction capacitance_<br>V = V<br>600<br>T = 25°C<br>f = 1 MHz<br>R<br>VJ|||30||pF| IXYS reserves the right to change limits, conditions and dimensions. Data according to IEC 60747and per semiconductor unless otherwise specified 20131206a © 2013 IXYS all rights reserved **MDI145-12A3** |Ratings<br>**Buck IGBT**|Ratings<br>**Buck IGBT**|Ratings<br>**Buck IGBT**|Ratings<br>**Buck IGBT**|Ratings<br>**Buck IGBT**| |---|---|---|---|---| |Symbol<br>Definition<br>Conditions|min.|typ.|max.|Unit| |VCES<br>_collector emitter voltage_<br>T = 25°C<br>VJ|||1200|V| |VGES<br>VGEM<br>_max. transient gate emitter voltage_<br>_max. DC gate voltage_|||±20<br>±30|V<br>V| |T = 25°C<br>_collector current_<br>C<br>T = °C<br>C<br>IC25<br>IC<br>80<br>80|||160<br>110|A<br>A| |_total power dissipation_<br>Ptot<br>T = 25°C<br>C|||700|W| |T = °C<br>_collector emitter saturation voltage_<br>VJ<br>VCE(sat)<br>I = A; V = 15 V<br>C<br>GE<br>T = 25°C<br>VJ<br>100<br>125||2.7<br>2.2|2.7|V<br>V| |_gate emitter threshold voltage_<br>VGE(th)<br>I = mA; V = V<br>C<br>GE<br>CE<br>T = 25°C<br>VJ<br>4|4.5|5.5|6.5|V| |_collector emitter leakage current_<br>ICES<br>V = V ; V = 0 V<br>CE<br>CES<br>GE<br>T = 25°C<br>VJ<br>T = °C<br>VJ<br>125||9|6|mA<br>mA| |IGES<br>_gate emitter leakage current_<br>V = ±20 V<br>GE|||400|nA| |G(on)<br>_total gate charge_<br>V = V; V = 15 V; I = A<br>CE<br>Q<br>GE<br>C<br>100<br>600||480||nC| |_turn-on delay time_<br>t<br>T = °C<br>t<br>t<br>t<br>E<br>E<br>d(on)<br>r<br>d(off)<br>f<br>on<br>off<br>_current rise time_<br>_turn-off delay time_<br>_current fall time_<br>_turn-on energy per pulse_<br>_turn-off energy per pulse_<br>inductive load<br>V = V; I = A<br>V = ±15 V; R = Ω<br>CE<br>C<br>GE<br>G<br>VJ<br>100<br>6.8<br>600<br>125||100<br>60<br>600<br>90<br>16<br>15||ns<br>ns<br>ns<br>ns<br>mJ<br>mJ| |_reverse bias safe operating area_<br>RBSOA<br>T = °C<br>VJ<br>V = ±15 V; R = Ω<br>GE<br>G<br>V = V<br>CEmax<br>1200<br>6.8<br>I CM<br>125|||200|A| |_short circuit safe operating area_<br>SCSOA<br>T = °C<br>VJ<br>V = V; V = ±15 V<br>CE<br>GE<br>_short circuit duration_<br>t<br>_short circuit current_<br>I<br>SC<br>SC<br>R = Ω; non-repetitive<br>G<br>6.8<br>1200<br>V = V<br>CEmax<br>1200<br>125||330|10|µs<br>A| |R thJC<br>_thermal resistance junction to case_|||0.18|K/W| |RthCH<br>_thermal resistance case to heatsink_||0.18||K/W| ||||1200|V| |**Buck Diode BD**||||| |VRRM<br>_max. repetitive reverse voltage_<br>T = 25°C<br>VJ||||| |T = 25°C<br>_forward current_<br>C<br>T = °C<br>C<br>IF25<br>IF<br>80<br>80|||150<br>95|A<br>A| |T = 25°C<br>_forward voltage_<br>VJ<br>T = 125°C<br>VJ<br>VF<br>I = A<br>F<br>100||1.90|2.60|V<br>V| |T = 25°C<br>_reverse current_<br>VJ<br>T = 125°C<br>VJ<br>IR<br>R<br>RRM<br>V = V||1.5|1|mA<br>mA| |-di /dt = A/µs<br>T = 125°C<br>VJ<br>Q<br>I<br>t<br>rr<br>RM<br>rr<br>_reverse recovery charge_<br>_max. reverse recovery current_<br>_reverse recovery time_<br>V =<br>I = A; V = 0 V<br>F<br>F<br>GE<br>E rec<br>_reverse recovery energy_<br>R<br>100<br>600<br>600 V||8.5<br>62<br>200<br>1.5||µC<br>A<br>ns<br>mJ| |R thJC<br>_thermal resistance junction to case_|||0.45|K/W| |R thCH<br>_thermal resistance case to heatsink_||0.45||K/W| |||||| IXYS reserves the right to change limits, conditions and dimensions. Data according to IEC 60747and per semiconductor unless otherwise specified 20131206a © 2013 IXYS all rights reserved **MDI145-12A3** |**Package**|**Y4**||||Ratings|Ratings|Ratings||| |---|---|---|---|---|---|---|---|---|---| |Symbol|Definition|Conditions|||min.|typ.||max.|Unit| |I RMS|_RMS current_|per terminal||||||300|A| |TVJ|_virtual junction temperature_||||-40<br>~~SE~~|||150|°C| |Top|_operation temperature_||||-40|||125|°C| |Tstg|_storage temperature_||||-40|||125|°C| |Weight||||||108|||g| |M D|_mounting torque_||||2.25|||2.75|Nm| |M T|_terminal torque_||||4.5|||5.5|Nm| |d Spp/App|_creepage distance on surface | striking distance through air_||_terminal to terminal_|14.0|10.0||||mm| |d Spb/Apb|||_terminal to backside_|16.0|16.0||||mm| |V<br>ISOL|_isolation voltage_|t = 1 second<br>t = 1 minute|50/60 Hz, RMS; I ≤ 1 mA<br>ISOL||3600<br>3000||||V<br>V| **==> picture [186 x 55] intentionally omitted <==** **----- Start of picture text -----**<br> accompy. Line Circuit Diagram<br>Date Code yywwA<br>Part No. YYYYYYYYYYY 2D Matrix<br>ci<br>**----- End of picture text -----**<br> |Ordering|Part Number|Markingon Product|DeliveryMode|Quantity|Code No.| |---|---|---|---|---|---| |Standard|MDI145-12A3|MDI145-12A3|Box|6|474223| IXYS reserves the right to change limits, conditions and dimensions. Data according to IEC 60747and per semiconductor unless otherwise specified 20131206a © 2013 IXYS all rights reserved **MDI145-12A3** **==> picture [509 x 503] intentionally omitted <==** **----- Start of picture text -----**<br> Outlines Y4<br>67 ±0.2<br>2.8 x0.5<br>M5<br>Ø 6.5<br>94 ±0.3<br>80 ±0.2<br>M5 x10<br>1 2 3<br>17 ±0.2<br>40 ±0.2<br>General tolerances:<br>DIN ISO 2768-T1-m 63 ±0.2<br>7.5<br>30 ±0.3 +0.5 - 0.2<br>29.5 +0.3 - 0.1<br>0.25<br>5 7.7<br>7 11<br>6 10<br>Ø 12<br>34 ±0.2 15 ±0.2<br>28 ±0.15<br>18.5 ±0.15<br>5 9<br>4 8<br>**----- End of picture text -----**<br> **==> picture [483 x 168] intentionally omitted <==** **----- Start of picture text -----**<br> 1<br>7<br>6<br>3<br>2<br>**----- End of picture text -----**<br> IXYS reserves the right to change limits, conditions and dimensions. Data according to IEC 60747and per semiconductor unless otherwise specified 20131206a © 2013 IXYS all rights reserved **MDI145-12A3** ## **Buck IGBT** **==> picture [508 x 660] intentionally omitted <==** **----- Start of picture text -----**<br> 250 250 200<br>TVJ = 25°C TVJ = 125°C VGE =17 V VCE = 20 V<br>200 VGE =17 V 200 TVJ = 25°C<br>15 V<br>15 V 150<br>13 V<br>13 V<br>IC 150 11 V IC 150 11 V IC<br>100<br>[A]100 [A] 100 [A]<br>9 V<br>9 V 50<br>50 50<br>0 0 0<br>0.5 1.0 1.5 2.0 2.5 3.0 3.5 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 6 7 8 9 10 11 12<br>VCE [V] VCE [V] VGE [V]<br>Fig. 1 Typ. output characteristics Fig. 2 Typ. output characteristics Fig. 3 Typ. transfer characteristics<br>20 40 120 40 800<br>VCE = 600 V t d(on)<br>IC = 50 A<br>15 30 t r 90 30 t d(off) 600<br>t VCE = 600 V<br>VGE 10 Eon 20 60 Eoff20 RVGEG = ±15 V= 6.8 400t<br>[V] [mJ] [mJ] TVJ = 125°C [ns]<br>[ns]<br>VCE = 600 V<br>5 10 VGE = ±15 V 30 10 Eoff 200<br>RG = 6.8<br>Eon TVJ = 125°C t f<br>0 0 0 0 0<br>0 200 400 600 0 50 100 150 200 0 50 100 150 200<br>QG [nC] IC [A] IC [A]<br>Fig. 4 Typ. turn-on gate charge Fig. 5 Typ. turn on energy & switching Fig.6 Typ. turn off energy & switching<br>times versus collector current times versus collector current<br>0.20 50 300 25 1500<br>VCE = 600 V t d(on) t d(off)<br>VGE = ±15 V<br>0.16 40 I C = 100 A 240 20 1200<br>TVJ = 125°C<br>0.12 Eon30 t r 180 Eoff15 900t<br>single pulse [mJ] Eoff<br>ZthJC [mJ] t V CE = 600 V [ns]<br>0.08 20 120 10 VGE = ±15 V 600<br>[K/W] [ns] T ICVJ = 125°C = 100 A<br>0.04 10 Eon 60 5 300<br>t f<br>0.00 0 0 0 0<br>10 [-4] 10 [-3] 10 [-2] 10 [-1] 10 [0] 0 8 16 24 32 40 48 56 0 8 16 24 32 40 48 56<br>t [s] RG [ ] RG [ ]<br>Fig. 12 Typical transient Fig. 9 Typ. turn on energy & switching Fig. 9 Typ. turn off energy & switching<br>thermal impedance times versus gate resistor times versus gate resistor<br>**----- End of picture text -----**<br> IXYS reserves the right to change limits, conditions and dimensions. Data according to IEC 60747and per semiconductor unless otherwise specified 20131206a © 2013 IXYS all rights reserved **MDI145-12A3** ## **Buck Diode BD** **==> picture [338 x 430] intentionally omitted <==** **----- Start of picture text -----**<br> 300 120 300<br>250<br>200 80 200<br>IF 150 IRM trr trr<br>[ns]<br>[A] [A]<br>100 40 100<br>TJ = 125°C TJ = 125°C<br>50 V R = 600V<br>TJ = 25°C IRM IF = 100A<br>0 0 0<br>0.5 1.0 1.5 2.0 2.5 3.0 3.5 0 200 400 600 800 1000<br>VF [V] -di/dt [A/μs]<br>Fig. 1 Typ. Forward current vs. VF Fig. 2 Typ. peak reverse current<br>IRM versus di/dt<br>0.5<br>0.4<br>ZthJC<br>0.3<br>[K/W]<br>single pulse<br>0.2<br>0.1<br>0.0<br>10 [-3] 10 [-2] 10 [-1] 10 [0]<br>t [s]<br>**----- End of picture text -----**<br> Fig. 3 Typ. transient thermal impedance junction to case IXYS reserves the right to change limits, conditions and dimensions. Data according to IEC 60747and per semiconductor unless otherwise specified 20131206a © 2013 IXYS all rights reserved
Updated at February 9, 2023
About Novapart
Novapart is a B2B electronic component broker specialising in stock shortages and cost reduction. We source hard-to-find parts and identify compliant alternatives across a catalogue of 410,000+ components from 500+ manufacturers.
Learn more →Stock Shortage Specialist
When a component is unavailable, discontinued or has an unacceptable lead time, we tap into our network of vetted European and Asian distributors to source what you need — without compromising on quality or traceability.
Request a quote →Compliant Alternatives
We identify pin-to-pin, electrically equivalent substitutes that meet the same certifications (RoHS, AEC-Q100, REACH) as your original specification — validated against datasheets, not just part numbers. Often at a lower cost.
BOM Analysis service →