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MCR8SDG
Thyristor, 400 V, 200 µA, 8 A, TO-220AB, 3 Pins
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- Manufacturer: LITTELFUSE
- Product type: Thyristors - SCRs
- Peak Repetitive Off-State Voltage, Vdrm:400V; Gate Trigger Current Max, Igt:200µA; Current It av:-; On State RMS Current IT(rms):8A; Thyristor Case Style:TO-220AB; No. of Pins:3Pins; Pe
- MSL: -
- SVHC: No SVHC (15-Jan-2018)
- No. of Pins: 3Pins
- Product Range: -
- Thyristor Mounting: Through Hole
- Holding Current Max: 6mA
- On State RMS Current: 8A
- Thyristor Case Style: TO-220AB
- Average On State Current: -
- Gate Trigger Current Max: 200µA
- Gate Trigger Voltage Max: 1V
- Operating Temperature Max: 110°C
- Peak Non Repetitive Surge Current: -
- Peak Repetitive Off State Voltage: 400V
| Delivery and price | |
|---|---|
| Units per pack | 1000 |
| Price | 0.848 € |
| Current stock | 500+ |
| Lead time | 30 days |
Datasheet
Thyristors **Datasheet**
**MCR8SDG, MCR8SMG, MCR8SNG** Sensitive Gate Silicon Controlled Rectifiers — 400V - 800V
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## **Description**
Designed primarily for half-wave ac control applications, such as motor controls, heating controls, and power supplies; or wherever half−wave, silicon gate−controlled devices are needed.
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Additional Information<br>S<br>7 8<br>Resources Accessories Samples<br>Functional Diagram<br>G<br>A oe K<br>**----- End of picture text -----**<br>
## **Features**
- Sensitive Gate Allows ■ Glass Passivated Junctions Triggering by Microcontrollers for Reliability and Uniformity and other Logic Circuits
- Minimum and Maximum
- ■ Blocking Voltage to 800 V Values of IGT, VGT and IH ■ On−State Current Rating of 8 Specified for Ease of Design A RMS at 80°C ■ Immunity to dv/dt − 5 V/μsec
- ■ High Surge Current Capability Minimum at 110°C − 80 A ■ These are Pb−Free Devices
- Rugged, Economical TO−220AB Package
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Pin Out<br>**----- End of picture text -----**<br>
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4<br>TO-220AB<br>Case 221A<br>, Style 4<br>1<br>2<br>3<br>**----- End of picture text -----**<br>
© 2021 Littelfuse, Inc. Specifications are subject to change without notice. Revised: GD. 05/24/21
**1**
Thyristors **Datasheet**
**MCR8SDG, MCR8SMG, MCR8SNG** Sensitive Gate Silicon Controlled Rectifiers — 400V - 800V
**Maximum Ratings** (TJ = 25°C unless otherwise noted)
|**Rating**<br>Peak Repetitive Off−State Voltage (Note 1)<br>(− 40 to 110°C, Sine Wave, 50 to 60 Hz, Gate Open)<br>MCR8SDG<br>MCR8SMG<br>MCR8SNG|**Symbol**<br>VDRM,<br>VRRM|**Value**<br>400<br>600<br>800|**Unit**<br>V|
|---|---|---|---|
|On-State RMS Current (180º Conduction Angles; TC= 80°C)|IT (RMS)|8.0|A|
|Peak Non-Repetitive Surge Current<br>(1/2 Cycle, Sine Wave 60 Hz, TJ= 110°C)|ITSM|80|A|
|Circuit Fusing Consideration (t = 8.33 ms)|I2t|26.5|A²sec|
|Forward Peak Gate Power (Pulse Width ≤ 10 µsec,TC= 80°C)|PGM|5.0|W|
|Forward Average Gate Power (t = 8.3 msec, TC= 80°C)|PGM (AV)|0.5|W|
|Forward Peak Gate Current (Pulse Width ≤ 10 µsec, TC= 80°C)|IGM|2.0|A|
|Operating Junction Temperature Range|TJ|-40 to 110|°C|
|Storage Temperature Range|Tstg|-40 to 150|°C|
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
1. VDRM and VRRM for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; however, positive gate voltage shall not be applied concurrent with negative potential on the anode. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded.
## **Thermal Characteristics**
|**Rating**<br>Thermal Resistance, Junction−to−Case|**Symbol**<br>R8JC|**Value**<br>2.2|**Unit**<br>°C/W|
|---|---|---|---|
|Thermal Resistance, Junction−to−Ambient|R8JA|62.5||
|Maximum Lead Temperature for Soldering Purposes 1/8" from Case for<br>10 Seconds|TL|260|°C|
**Electrical Characteristics - OFF** (TJ = 25°C unless otherwise noted)
|**Characteristic**<br>Peak Repetitive Forward or Reverse Blocking Current (Note 3)<br>(VAK= Rated VDRMor VRRM, RGK= 1.0 kΩ|TJ= 25°C|**Symbol**<br>IDRM,<br>IRRM|**Min**<br>-|**Typ**<br>-|**Max**<br>10|**Unit**<br>µA|
|---|---|---|---|---|---|---|
||TJ= 110°C||-|-|500||
**Electrical Characteristics - ON** (TJ = 25°C unless otherwise noted; Electricals apply in both directions)
|**Characteristic**<br>Peak Forward On−State Voltage (Note 2) (ITM= 16 A)|**Characteristic**<br>Peak Forward On−State Voltage (Note 2) (ITM= 16 A)|**Symbol**<br>VTM|**Min**<br>-|**Typ**<br>-|**Max**<br>1.8|**Unit**<br>V|
|---|---|---|---|---|---|---|
|Gate Trigger Current (Continuous dc) (Note 4)<br>(VD= 12 V; RL= 100 Ω)||IGT|5.0|25|200|µA|
|Holding Current (Note 3)<br>(VD= 12 V, Gate Open, InitiatingCurrent = 200 mA)||IH|-|0.5|6.0|mA|
|Latch Current (Note 4) (VD= 12 V, IG= 200 µA)||IL|-|0.6|8.0|mA|
|Gate Trigger Voltage (Continuous dc) (VD= 12 V, RL= 100 Ω)<br>(Note 4)|TJ= 25°C|VGT|0.3|0.65|1.0|V|
||TJ= −40°C||-|-|1.5||
|Gate Non−Trigger Voltage<br>(VD= 12 V, RL= 100 Ω)|TJ= 110ºC|VGD|0.2|-|-|V|
© 2021 Littelfuse, Inc. Specifications are subject to change without notice. Revised: GD. 05/24/21
**2**
Thyristors **Datasheet**
## **MCR8SDG, MCR8SMG, MCR8SNG** Sensitive Gate Silicon Controlled Rectifiers — 400V - 800V
## **Dynamic Characteristics**
|**Characteristic**<br>Critical Rate of Rise of Off−State Voltage<br>(VD= 67% VDRM, RGK= 1 KΩ, CGK= 0.1µF, TJ= 110ºC)|**Symbol**<br>dv/dt|**Min**<br>5.0|**Typ**<br>15|**Max**<br>−|**Unit**<br>V/µs|
|---|---|---|---|---|---|
|Critical Rate of Rise of On−State Current<br>(IPK = 50 A, Pw = 40µsec, diG/dt = 1 A/µsec, Igt = 10 mA|di/dt|−|−|100|A/µs|
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions.
2. Ratings apply for negative gate voltage or RGK = 1.0 kQ. Devices shall not have a positive gate voltage concurrently with a negative voltage on the anode. Devices should not be tested with a constant current source for forward and reverse blocking capability such that the voltage applied exceeds the rated blocking voltage.
3. Pulse Test; Pulse Width ≤ 2.0 msec, Duty Cycle ≤ 2%.
4. RGK current not included in measurements.
## **Voltage Current Characteristic of SCR**
|**Symbol**<br>VDRM|**Parameter**<br>Peak Repetitive Forward Off State Voltage|
|---|---|
|IDRM|Peak Forward Blocking Current|
|VRRM|Peak Repetitive Reverse Off State Voltage|
|IRRM|Peak Reverse Blocking Current|
|VTM|Maximum On State Voltage|
|IH|Holding Current|
**Figure 1.** Typical RMS Current Derating
**Figure 2.**
On−State Power Dissipation
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© 2021 Littelfuse, Inc. Specifications are subject to change without notice. Revised: GD. 05/24/21
**3**
Thyristors **Datasheet**
## **MCR8SDG, MCR8SMG, MCR8SNG** Sensitive Gate Silicon Controlled Rectifiers — 400V - 800V
**Figure 3.** Typical On−State Characteristics
**Figure 4.**
Typical Gate Trigger Current vs Junction Temperature
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**Figure 5.** Typical Gate Trigger Current vs Junction Temperature
**Figure 6.**
Typical Gate Trigger Voltage vs Junction Temperature
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**Figure 7.**
Typical Holding Current vs Junction Temperature
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© 2021 Littelfuse, Inc. Specifications are subject to change without notice. Revised: GD. 05/24/21
**4**
Thyristors **Datasheet**
**MCR8SDG, MCR8SMG, MCR8SNG** Sensitive Gate Silicon Controlled Rectifiers — 400V - 800V
**Dimensions**
## **Part Marking System**
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B F C<br>T<br>S<br>4<br>4<br>i oF 2}<br>Q A<br>12 3 U TO-220AB<br>YMAXX<br>H MCR8SxG<br>K AKA<br>Z<br>1<br>L R 2 3<br>V Pol J Fx YM =Year=Month<br>G A =Assembly Site<br>D AKA =Diode Polarity<br>G =Pb-Free Package<br>N ES<br>**----- End of picture text -----**<br>
|**Dim**<br>**A**|**Inches**|**Inches**|**Millimeters**|**Millimeters**|
|---|---|---|---|---|
||**Min**<br>0.590|**Max**<br>0.620|**Min**<br>14.99|**Max**<br>15.75|
|**B**|0.380|0.420|9.65|10.67|
|**C**|0.178|0.188|4.52|4.78|
|**D**|0.025|0.035|0.64|0.89|
|**F**|0.142|0.147|3.61|3.73|
|**G**|0.095|0.105|2.41|2.67|
|**H**|0.110|0.130|2.79|3.30|
|**J**|0.018|0.024|0.46|0.61|
|**K**|0.540|0.575|13.72|14.61|
|**L**|0.060|0.075|1.52|1.91|
|**N**|0.195|0.205|4.95|5.21|
|**Q**|0.105|0.115|2.67|2.92|
|**R**|0.085|0.095|2.16|2.41|
|**S**|0.045|0.060|1.14|1.52|
|**T**|0.235|0.255|5.97|6.47|
|**U**|0.000|0.050|0.00|1.27|
|**V**|0.045|---|1.15|---|
|**Z**|---|0.080|---|2.04|
||**Pin Assignment**|
|---|---|
|1|Cathode|
|2|Anode|
|3|Gate|
|4|Anode|
## **Ordering Information**
|**Device**<br>MCR8SDG|**Package**<br>TO−220AB<br>(Pb−Free)|**Shipping**<br>1000 Units / Box|
|---|---|---|
|MCR8SMG|||
|MCR8SNG|||
1. Dimensioning and tolerancing per ansi y14.5m, 1982.
2. Controlling dimension: inch.
3. Dimension z defines a zone where all body and lead irregularities are allowed.
**Disclaimer Notice -** Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at http://www.littelfuse.com/disclaimer-electronics.
© 2021 Littelfuse, Inc. Specifications are subject to change without notice. Revised: GD. 05/24/21
**5**
Updated at June 10, 2026
Founded in 1927 and headquartered in Chicago, Illinois, Littelfuse is a premier global manufacturer of circuit protection, power control, and sensing technologies. Widely recognized for pioneering the first small, fast-acting protective fuse, the company has grown into an industry leader whose highly reliable components are essential to modern industrial, transportation, and consumer electronics applications worldwide. At the core of the Littelfuse portfolio is an expansive and industry-leading range of circuit protection solutions. This encompasses a massive selection of traditional fuses, fuse holders, and resettable PTC thermistor fuses designed to safely interrupt overcurrent conditions. To defend against electrical overstress, Littelfuse also provides advanced transient voltage suppression (TVS) technologies, including thousands of specialized TVS diodes, TVS varistors, and gas discharge tubes (GDTs) that ensure robust defense against voltage spikes and environmental hazards. Beyond its foundational protection components, Littelfuse manufactures a diverse array of discrete semiconductors, sensors, and switching devices. Engineers rely on their high-performance thyristors, including TRIACs and SCRs, alongside power-efficient Schottky diodes and MOSFETs for demanding power control applications. Complemented by precision proximity sensors and highly reliable reed and solid-state relays, Littelfuse delivers the critical building blocks required for secure, efficient, and complete system design.
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