MCR8NG.

## MCR8NG 

## Silicon Controlled Rectifiers 

## **Reverse Blocking Thyristors** 

Designed primarily for half-wave ac control applications, such as motor controls, heating controls, and power supplies; or wherever half−wave, silicon gate−controlled devices are needed. 

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## **Features** 

- Blocking Voltage of 600 thru 800 Volts 

- On−State Current Rating of 8 Amperes RMS at 80°C 

- High Surge Current Capability − 80 Amperes 

**SCRs 8 AMPERES RMS 600 thru 800 VOLTS** 

- Rugged, Economical TO−220AB Package 

- Glass Passivated Junctions for Reliability and Uniformity 

- Minimum and Maximum Values of IGT, VGT and IH Specified for Ease of Design 

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- High Immunity to dv/dt − 100 V/ sec Minimum at 125°C 

- These are Pb−Free Devices* 

## **MARKING DIAGRAM** 

**MAXIMUM RATINGS** (TJ = 25 ° C unless otherwise noted) 

**Rating Symbol Value Unit** Peak Repetitive Off−State Voltage (Note 1) VDRM, V (TJ = −40 to 125 ° C, Sine Wave, VRRM AY   WW 50 to 60 Hz, Gate Open) MCR8MG 600 MCR8NG MCR8NG 800 AKA ~~ie~~ On-State RMS Current(180 ° Conduction Angles; TC = 80 ° C) IT(RMS) 8.0 A 1 **CASE 221A−09TO−220AB** ~~ee~~ 2 3 **STYLE 3** Hn Peak Non-Repetitive Surge Current ITSM 80 A ~~ee~~ (One Full Cycle, 60 Hz, TC = 125 ° C) A = Assembly Location Circuit Fusing Consideration (t = 8.33 ms) I[2] t 26.5 A[2] sec Y = Year ~~ee~~ WW = Work Week ~~ee~~ Forward Peak Gate Power(Pulse Width ≤ 1.0 s, TC = 80 ° C) P ~~**e**~~ GM ~~e ee~~ 5.0 ~~ee~~ W GAKA = Diode Polarity= Pb−Free Package Forward Average Gate Power(t = 8.3 ms, TC = 80 ° C) PG(AV) 0.5 W ~~Po~~ Forward Peak Gate Current IGM 2.0 A (Pulse Width ≤ 1.0 s, TC = 80 ° C) **PIN ASSIGNMENT** ~~ee~~ Operating Junction Temperature Range TJ −40 to 125 ° C 1 Cathode Storage Temperature Range Tstg −40 to 150 ° C 2 Anode 3 Gate Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be 4 Anode ~~—— —~~ assumed, damage may occur and reliability may be affected. 1. VDRM and VRRM for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; positive gate voltage shall not be applied concurrent with negative potential on the anode. Blocking voltages shall not be tested with a constant current source such that the voltage ratings **ORDERING INFORMATION** of the devices are exceeded. **Device Package Shipping** MCR8NG TO−220AB 50 Units / Rail (Pb−Free) ~~TE~~ 

- *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. 

Publication Order Number: 

**1** 

© Semiconductor Components Industries, LLC, 2015 **January, 2015 − Rev. 6** 

**MCR8/D** 

**MCR8NG** 

## **THERMAL CHARACTERISTICS** 

|**THERMAL CHARACTERISTICS**||||
|---|---|---|---|
|**Characteristic**|**Symbol**|**Value**|**Unit**|
|Thermal Resistance<br>Junction−to−Case<br>Junction−to−Ambient|R�JC<br>R�JA|2.2<br>62.5|°C/W|
|Maximum Lead Temperature for Soldering Purposes 1/8″from Case for 10 Seconds|TL|260|°C|



|**ELECTRICAL CHARACTERISTICS**(TJ= 25°C unless otherwise noted)||||||
|---|---|---|---|---|---|
|**Characteristic**|**Symbol**|**Min**|**Typ**|**Max**|**Unit**|
|**OFF CHARACTERISTICS**||||||
|Peak Repetitive Forward or Reverse Blocking Current<br>(VD= Rated VDRMand VRRM; Gate Open)<br>TJ= 25°C<br>TJ= 125°C|IDRM,<br>IRRM|−<br>−|−<br>−|0.01<br>2.0|mA|
|**ON CHARACTERISTICS**||||||
|Peak Forward On−State Voltage (Note )<br>(ITM= 16 A)|VTM|−|−|1.8|V|
|Gate Trigger Current (Continuous dc)<br>(VD= 12 V; RL= 100�)|IGT|2.0|7.0|15|mA|
|Holding Current<br>(VD= 12 V, Gate Open, Initiating Current = 200 mA)|IH|4.0|17|30|mA|
|Latch Current<br>(VD= 12 V, IG= 15 mA)|IL|6.0|20|40|mA|
|Gate Trigger Voltage (Continuous dc)<br>(VD= 12 V; 100�)<br>TJ= 25°C|VGT|0.5|0.65|1.0|V|
|Gate Non−Trigger Voltage<br>(VD= 12 V; RL= 100�)<br>TJ= 125°C|VGD|0.2|−|−|V|
|**DYNAMIC CHARACTERISTICS**||||||
|Critical Rate of Rise of Off−State Voltage<br>(VD= Rated VDRM, Exponential Waveform, Gate Open, TJ= 125°C)|dv/dt|100|250|−|V/�s|
|Critical Rate of Rise of On−State Current<br>IPK = 50 A, Pw = 40�sec, diG/dt = 1 A/�sec, Igt = 50 mA|di/dt|−|−|50|A/�s|



Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 2. Indicates Pulse Test: Pulse Width � 2.0 ms, Duty Cycle � 2%. 

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**2** 

**MCR8NG** 

## **Voltage Current Characteristic of SCR** 

|**Symbol**|**Parameter**|
|---|---|
|VDRM|Peak Repetitive Off State Forward Voltage|
|IDRM|Peak Forward Blocking Current|
|VRRM|Peak Repetitive Off State Reverse Voltage|
|IRRM|Peak Reverse Blocking Current|
|VTM|Peak On State Voltage|
|IH|Holding Current|



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125<br>120<br>115<br>110<br>105<br>dc<br>100<br>95<br>30 ° 60 ° 90 ° 180 °<br>90<br>0 1 2 3 4 5 6 7 8<br>IT(RMS), RMS ON−STATE CURRENT (AMPS)<br>Figure 1. Typical RMS Current Derating<br>100<br>MAXIMUM @ T J  = 25 ° C<br>MAXIMUM @ TJ = 125 ° C<br>10<br>1<br>0.1<br>0.5 1.0 1.5 2.0 2.5 3.0<br>VT, INSTANTANEOUS ON−STATE VOLTAGE (VOLTS)<br>°<br>TC, CASE TEMPERATURE ( C)<br>, INSTANTANEOUS ON−STATE CURRENT (AMPS)<br>IT<br>**----- End of picture text -----**<br>


**Figure 3. Typical On−State Characteristics** 

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+ Current<br>Anode +<br>VTM<br>on state<br>IRRM at VRRM IH<br>+ Voltage<br>Reverse Blocking Region IDRM at VDRM<br>(off state) Forward Blocking Region<br>(off state)<br>Reverse Avalanche Region<br>Anode −<br>20<br>18<br>16 180 °<br>90 ° dc<br>14 60 °<br>12<br>30 °<br>10<br>8<br>6<br>4<br>2<br>0<br>0 1 2 3 4 5 6 7 8<br>IT(AV), AVERAGE ON−STATE CURRENT (AMPS)<br>, AVERAGE POWER DISSIPATION (WATTS)<br>(AV)<br>P<br>**----- End of picture text -----**<br>


**Figure 2. On−State Power Dissipation** 

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20<br>18<br>16<br>14<br>12<br>10<br>8<br>6<br>4<br>2<br>0<br>−40 −25 −10 5 20 35 50 65 80 95 110 125<br>TJ, JUNCTION TEMPERATURE ( ° C)<br>GATE TRIGGER CURRENT (mA)<br>**----- End of picture text -----**<br>


**Figure 4. Typical Gate Trigger Current versus Junction Temperature** 

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**3** 

## **MCR8NG** 

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100 1.0<br>0.9<br>0.8<br>0.7<br>10 0.6<br>0.5<br>0.4<br>0.3<br>1 0.2<br>−40 −25 −10 5 20 35 50 65 80 95 110 125 −40 −25 −10 5 20 35 50 65 80 95 110 125<br>TJ, JUNCTION TEMPERATURE ( ° C) TJ, JUNCTION TEMPERATURE ( ° C)<br>, HOLDING CURRENT (mA)<br>IH<br>VGT, GATE TRIGGER VOLTAGE (VOLTS)<br>**----- End of picture text -----**<br>


**Figure 5. Typical Holding Current versus Junction Temperature** 

**Figure 6. Typical Gate Trigger Voltage versus Junction Temperature** 

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100<br>10<br>1<br>−40 −25 −10 5 20 35 50 65 80 95 110 125<br>TJ, JUNCTION TEMPERATURE ( ° C)<br>IL, LATCHING CURRENT (mA)<br>**----- End of picture text -----**<br>


**Figure 7. Typical Latching Current versus Junction Temperature** 

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**4** 

**MCR8NG** 

## **PACKAGE DIMENSIONS** 

**TO−220** CASE 221A−09 ISSUE AH 

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SEATING<br>−T− PLANE<br>B F C<br>T S<br>4<br>Q ty A a<br>1 2 3 U<br>H<br>K<br>Z<br>L R<br>V J<br>G<br>D<br>N<br>**----- End of picture text -----**<br>


|NOTES:||||
|---|---|---|---|
|1. DIMENSIONING AND TOLERANCING PER ANSI||||
|Y14.5M, 1982.||||
|2. CONTROLLING DIMENSION: INCH.<br>3. DIMENSION Z DEFINES A ZONE WHERE ALL<br>BODY AND LEAD IRREGULARITIES ARE<br>ALLOWED.<br>**DIM**<br>**MIN**<br>**MAX**<br>**MIN**<br>**MAX**<br>**MILLIMETERS**<br>**INCHES**<br>**A**<br>0.570<br>0.620<br>14.48<br>15.75<br>**B**<br>0.380<br>0.415<br>9.66<br>10.53<br>~~eeEE~~||||
|**C**<br>0.160<br>0.190|4.07|4.83||
|**D**<br>0.025<br>0.038|0.64|0.96||
|**F**<br>0.142<br>0.161|3.61|4.09||
|**G**<br>0.095<br>0.105|2.42|2.66||
|**H**<br>0.110<br>0.161|2.80|4.10||
|**J**<br>0.014<br>0.024|0.36|0.61||
|**K**<br>0.500<br>0.562|12.70|14.27||
|**L**<br>0.045<br>0.060|1.15|1.52||
|**N**<br>0.190<br>0.210|4.83|5.33||
|**Q**<br>0.100<br>0.120|2.54|3.04||
|**R**<br>0.080<br>0.110|2.04|2.79||
|**S**<br>0.045<br>0.055|1.15|1.39||
|**T**<br>0.235<br>0.255|5.97|6.47||
|**U**<br>0.000<br>0.050|0.00|1.27||
|**V**<br>0.045<br>---|1.15|---||
|**Z**<br>---<br>0.080|---|2.04||
|STYLE 3:||||
|PIN 1.<br>CATHODE||||
|2.<br>ANODE||||
|3.<br>GATE||||
|4.<br>ANODE||||



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## **LITERATURE FULFILLMENT** : 

**MCR8/D** 

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